Abstract: A memory array includes a first subarray of memory cells and a second set of memory cells. The first and second subarrays of memory cells share a set of global word lines. The first and second subarrays of memory cells are coupled to first and second sets of bit lines, respectively. The first subarray includes rows of memory cells coupled to a first set of local word line drivers via a first set of local word lines, respectively. The second subarray includes rows of memory cells coupled to a second set of local word line drivers via a second set of local word lines, respectively. A selected local word line drivers generates a first asserted local word line signal for accessing at least one memory cell for reading or programming purpose in response to receiving a second asserted signal via a global word line and a third asserted signal.

Abstract: A write driver for a memory circuit includes a control circuit configured to: operate a first push-pull driver to generate a first drive signal in a first voltage domain at a first node based on an input signal in a second domain and in response to a mode select signal being in a first mode, wherein the first drive signal is at a same logic level as the input signal; operate a second push-pull driver to generate a second drive signal in the first voltage domain at a second node based on the input signal and in response to the mode select signal being in the first mode, wherein the second drive signal is at a complement logic level with respect to the input signal; and operate the first and second push-pull drivers to float the first and second nodes in response to the mode select signal being in a second mode.

Abstract: A mask-programmed read-only memory (MROM) has a plurality of column line pairs, each having a bit line and a complement bit line. The MROM includes a plurality of memory cells corresponding to a plurality of intersections between the column line pairs and a plurality of word lines. Each memory cell includes a high Vt transistor and a low Vt transistor.

Abstract: Voltage droop control is disclosed. A device includes a first component coupled to an external power supply and a second component coupled to the external power supply. The first component includes a first input configured to receive a first voltage, a first internal power supply configured to be charged by the external power supply in response to the first voltage corresponding to a first logical value, and a voltage droop controller configured to output a second voltage via a first output. The second voltage corresponds to the first logical value in response to a first voltage level of the first internal power supply satisfying a second voltage level. The second component includes a second input configured to receive the second voltage from the first output.

Abstract: A memory is provided that includes a row decoder that decodes an address into a plurality of decoded signals for selecting a word line to be asserted from a plurality of word lines. Each word line is driven through a decoder level-shifter that processes the decoded signals. Each decoder level-shifter corresponds to a unique combination of the decoded signals. The row decoder is in a logic power domain such that the decoded signals are asserted to a logic power supply voltage. When a decoder level-shifter's unique combination of decoded signals are asserted by the row decoder, the decoder level-shifter drives the corresponding word line with a memory power supply voltage for a memory power domain.

Abstract: A memory and a method for operating a memory are provided. The memory includes a memory cell configured to be powered from a first voltage source, a bitline, and a write driver configured to write to the memory cell through the bitline, the write driver comprising a pull-up circuit to pull up bitline voltage towards a second voltage source while using the first voltage source to limit the bitline voltage, the first and second voltage sources being in different voltage domains.

Abstract: A sense amplifier is provided with a pair of first pull-up transistors that are configured to charge a corresponding pair of output terminals while a delayed sense enable signal is not asserted and to stop charging the corresponding pair of output terminals while the delayed sense enable signal is asserted.

Abstract: A memory and a method for operating the memory provided. In one aspect, the memory may be a PDP memory. The memory includes a control circuit configured to generate a first clock and a second clock in response an edge of a clock for an access cycle. A first input circuit is configured to receive an input for a first memory access based on the first clock. The first input circuit includes a latch. The second input circuit configured to receive an input for a second memory access based on the second clock. The second input circuit includes a flip-flop.

Abstract: A sense amplifier is disclosed that includes an amplifier circuit configured to receive, at an input, an input signal including an input level, the amplifier circuit configured to provide an amplified output signal including a gain with respect to the input level; and a feedback circuit coupled to receive the amplified output signal from the amplifier circuit, the feedback circuit configured to provide, at the input of the amplifier circuit, an adjusted version of the amplified output signal including a modified output magnitude based on common mode feedback.

Abstract: An example scannable register file includes a plurality of memory cells and, a shift phase of a scan test shifts data bits from a scan input through the plurality of memory cells to a scan output. The shifting can be performed by, on each clock cycle, reading one of the plurality of memory cells to supply the scan out and writing one of the plurality of memory cells with the data bit on a scan input. To perform sequential reads and writes on each clock cycle, the scannable register can generate a write clock that, during the shift phase, is inverted from the clock used for functional operation. The write clock is generated without glitches so that unintended writes do not occur. Scannable register files can be integrated with scan-based testing (e.g., using automatic test pattern generation) of other modules in an integrated circuit.

Abstract: A system may be provided that provides redundancy for a plurality of embedded memories such as SRAMs. The system may include one or more decoders, each capable of decoding a selection address to identify a defective one of the embedded memories.

Abstract: A memory and a method for operating the memory provided. In one aspect, the memory may be a PDP memory. The memory includes a control circuit configured to generate a first clock and a second clock in response an edge of a clock for an access cycle. A first input circuit is configured to receive an input for a first memory access based on the first clock. The first input circuit includes a latch. The second input circuit configured to receive an input for a second memory access based on the second clock. The second input circuit includes a flip-flop.

Abstract: A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness.

Abstract: A write-assisted memory. The write-assisted memory includes a word-line decoder that is implemented within a low VDD power domain. The write-assisted memory also includes a write-segment controller that is partially implemented within the low VDD power domain and is partially implemented within a high VDD power domain. The write-assisted memory further includes a local write word-line decoder that is implemented within the high VDD power domain.

Abstract: The disclosure relates to an apparatus for reading data from a memory circuit that includes at least two memory banks. The apparatus includes a first multiplexer configured to generate data at a first output from a first selected one of a first set of bit lines of a first memory bank based on a select signal. The apparatus also includes a second multiplexer configured to generate data at a second output from a second selected one of a second set of bit lines of a second memory bank based on the select signal. Additionally, the apparatus includes a gating device configured to gate the data from either the first and second multiplexer outputs based on an enable signal. And, the apparatus includes an interface circuit configured to produce the gated data on a global bit line.

Abstract: A sense amplifier is provided that includes a skewed latch that latches a voltage difference developed responsive to a read operation on an accessed memory cell. The skewed latch includes a loaded logic gate that is cross-coupled with an unloaded logic gate. The loaded logic gate drives the unloaded logic gate and an output transistor whereas the unloaded logic gate drives only the loaded logic gate.

Abstract: A pulse latch is provided that latches a ground signal responsive to decoded signal carried on a decoded signal node. The pulse latch includes a reset logic circuit that controls a switch coupled between the decoded signal node and ground such that when the switch is turned on by the reset logic circuit, the decoded signal node is grounded. The reset of the decoded signal node by the reset logic circuit is responsive to a ground signal. The ground signal is generated so as to be responsive to a clock edge. Thus, the reset of the decoded signal node is also responsive to the clock edge.

Abstract: A memory and a method for operating the memory having a precharge circuit with inputs of multiple voltage domains are provided. In one aspect, a memory includes a bitline and one or more storage elements coupled to the bitline. The one or more storage elements are configured to operate in a first voltage domain using a first supply voltage. A pull-up circuit is configured to pull up the bitline to a second supply voltage in a second voltage domain. The pull-up circuit is responsive to a first control signal in the first voltage domain and a second control signal in the second voltage domain. The first supply voltage is different than the second supply voltage.

Abstract: A sense amplifier is disclosed that includes an amplifier circuit configured to receive, at an input, an input signal including an input level, the amplifier circuit configured to provide an amplified output signal including a gain with respect to the input level; and a feedback circuit coupled to receive the amplified output signal from the amplifier circuit, the feedback circuit configured to provide, at the input of the amplifier circuit, an adjusted version of the amplified output signal including a modified output magnitude based on common mode feedback.

Abstract: Disclosed are various apparatuses and methods for a memory with a multiple word line design. A memory timing circuit may include a dummy word line including a first portion and a second portion and further including capacitative loading that is lumped in the second portion of the dummy word line, a first transistor connected to the first portion of the dummy word line and configured to charge the dummy word line, and a second transistor connected to the second portion of the dummy word line and configured to discharge the dummy word line. A method may include charging a dummy word line using a first transistor, and discharging the dummy word line using a second transistor, wherein the dummy word line includes a first portion and a second portion and further includes capacitative loading that is lumped in the second portion of the dummy word line.