Abstract: A display device according to an embodiment includes: a substrate; a transistor on the substrate; a pixel electrode electrically connected to the transistor; a pixel defining layer on the pixel electrode and having a first opening overlapping the pixel electrode; an emission layer on the pixel electrode; a common electrode on the pixel definition layer and the emission layer; an encapsulation layer on the common electrode; a light extraction pattern on the encapsulation layer and having a first refractive index; and a reflection control layer covering the light extraction pattern and having a second refractive index different from the first refractive index.

Abstract: The present invention relates to a method for preparing protein microbeads for improving the stability of a protein preparation. It was confirmed that when protein is mixed with trehalose and protein is dehydrated in n-octanol by using the SPG membrane emulsification technique, microbeads with a narrow particle size distribution and high reversibility are formed, and the microbeads exhibit high stability to external shock or high temperature stress compared to protein solutions. Accordingly, the method for preparing protein microbeads according to the present invention is expected to be utilized as a method for improving storage stability by applying same to the preparation of high-concentration protein pharmaceuticals.

Abstract: The present disclosure provides an improvement to razor blade coating by a physical vapor deposition method, by forming a hard coating layer as a thin coating layer in which chromium boride, which is a nanocrystalline structure having high hardness, is dispersed in an amorphous mixture of chromium and boron, thereby improving the strength and hardness of the thin coating layer and securing the bonding force by chromium in the amorphous mixture between the hard coating layer and a blade substrate on which an edge of the razor blade is formed.

Abstract: A polarizing plate and an optical display including the same are provided. A polarizing plate includes: a polarizer; and a first protective layer and a second protective layer sequentially stacked on a surface of the polarizer, and the second protective layer includes a positive C retardation layer, the positive C retardation layer having a thickness of about 10 ?m or less, an index of refraction of about 1.50 to about 1.55, and a glass transition temperature (Tg) of about 150° C. to about 250° C.

Abstract: Provided is a brain-machine interface based intention determination device using a virtual environment, including: an input unit that receives a control mode; a training output unit that outputs training information; a collection unit that collects a brain signal; a first preprocessing unit that extracts time-frequency information; a second preprocessing unit that generates physical information; a learning unit that learns control information according to a pattern of physical information; a determination unit that determines control information; and a command output unit that outputs a control command matching the control information.

Abstract: Provided are an intrusion prevention system and a method for detecting and responding to a vehicle intrusion by means of an SDN support switch installed in an in-vehicle network (IVN) and an SDN controller communicating with the SDN-enabled switch, the method in which the SDN controller receives a flow table from the SDN-enabled switch, enables an intrusion detection system (IDS) to perform intrusion detection, and updates the flow table on the basis of the intrusion detection execution result.

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Abstract: The present invention provides a PEGylated IFN-? variant and a composition for preventing or treating hyperproliferative diseases, inflammatory diseases, autoimmune diseases or viral infectious diseases, the composition comprising the PEGylated IFN-? variant as an effective ingredient. The PEGylated IFN-? variant of the present invention has an excellent anti-viral efficacy, immune regulatory function and anti-cell growth efficacy by virtue of better pharmacokinetic properties compared to native IFN-? and non-PEGylated IFN-? variants, and therefore can be used usefully against various diseases. The present invention provides good patient convenience in terms of administration due to exhibition of an excellent pharmacological activity effect upon administration and a significant increase of half-life in blood over existing interferon formulations.

Abstract: Provided is a pharmaceutical formulation comprising a modified IL-7 protein. More particularly, it comprises (a) a modified IL-7 fusion protein; (b) a basal buffer with a concentration of 10 to 50 mM; (c) a sugar with a concentration of 2.5 to 5 w/v%; and (d) a surfactant with a concentration of 0.05 to 6 w/v%. Such pharmaceutical formulation of a modified IL-7 fusion protein does not show aggregates formation, but shows protective effects on proteins under stress conditions such as oxidation or agitation, and thus can effectively be used for the treatment of a patient.

Abstract: Provided is a pharmaceutical formulation comprising a modified IL-7 protein. More particularly, it comprises (a) a modified IL-7 fusion protein; (b) a basal buffer with a concentration of 10 to 50 mM; (c) a sugar with a concentration of 2.5 to 5 w/v %; and (d) a surfactant with a concentration of 0.05 to 6 w/v %. Such pharmaceutical formulation of a modified IL-7 fusion protein does not show aggregates formation, but shows protective effects on proteins under stress conditions such as oxidation or agitation, and thus can effectively be used for the treatment of a patient.

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Abstract: The present disclosure an intrusion prevention (or response) system and method for detecting and preventing a vehicle intrusion by means of an SDN-enabled switch installed in an in-vehicle network (IVN) and an SDN controller communicating with the SDN-enabled switch, the method in which the SDN support switch transmits a packet-in message to the SDN controller, enables an intrusion detection system (IDS) to determine whether a particular packet is an intrusion packet, receives an action according to a result of the determination, and transmits a packet-out message to the SDN-enabled switch so as to control a flow of a particular packet.

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Abstract: A crystalline modification of triazolopyrazine derivatives binds to a hepatocyte growth factor (HGF) to activate phosphorylation, thereby significantly inhibiting the activity of c-Met kinase triggering cell proliferation, migration, and formation of new blood vessels. Therefore, the compound of the present application may be effectively used for the treatment or prevention of various hyper proliferative disorders mediated by hyper proliferation activation of cells and excessive angiogenesis.

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Abstract: A crystalline modification of triazolopyrazine derivatives binds to a hepatocyte growth factor (HGF) to activate phosphorylation, thereby significantly inhibiting the activity of c-Met kinase triggering cell proliferation, migration, and formation of new blood vessels. Therefore, the compound of the present application may be effectively used for the treatment or prevention of various hyper proliferative disorders mediated by hyper proliferation activation of cells and excessive angiogenesis.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract: A simulation apparatus and a distribution simulation system are disclosed. The simulation apparatus, according to one example, includes a simulation executer configured to execute a simulation task, a data storage configured to store data related to the simulation task based on a data storage policy that is set in advance of the execution of the simulation tasks, and a data updater configured to update the data stored in the data storage to most recent data by comparing the data stored in the data storage with data stored in another simulation apparatus.