Patents by Inventor Seong Hoon Jeong

Seong Hoon Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9451613
    Abstract: A method of transmitting a control signal using efficient multiplexing is disclosed. The present invention includes the steps of multiplexing a plurality of 1-bit control signals within a prescribed time-frequency domain by code division multiple access (CDMA) and transmitting the multiplexed control signals, wherein a plurality of the 1-hit control signals include a plurality of the 1-bit control signals for a specific transmitting side. Accordingly, reliability on 1-bit control signal transmission can be enhanced.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: September 20, 2016
    Assignee: LG Electronics Inc.
    Inventors: Hak Seong Kim, Sung Duk Choi, Ki Jun Kim, Suk Hyon Yoon, Joon Kui Ahn, Bong Hoe Kim, Dong Youn Seo, Young Woo Yun, Jung Hoon Lee, Seong Hoon Jeong
  • Patent number: 9373703
    Abstract: A method of manufacturing a semiconductor device includes forming an active pattern protruding from a semiconductor substrate, forming a dummy gate pattern crossing over the active pattern, forming gate spacers on opposite first and second sidewalls of the dummy gate pattern, removing the dummy gate pattern to form a gate region exposing an upper surface and sidewalls of the active pattern between the gate spacers, recessing the upper surface of the active pattern exposed by the gate region to form a channel recess region, forming a channel pattern in the channel recess region by a selective epitaxial growth (SEG) process, and sequentially forming a gate dielectric layer and a gate electrode covering an upper surface and sidewalls of the channel pattern in the gate region. The channel pattern has a lattice constant different from that of the semiconductor substrate.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: June 21, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JinBum Kim, Jungho Yoo, Byeongchan Lee, Choeun Lee, Hyun Jung Lee, Seong Hoon Jeong, Bonyoung Koo
  • Publication number: 20160132414
    Abstract: A simulation apparatus and a distribution simulation system are disclosed. The simulation apparatus, according to one example, includes a simulation executer configured to execute a simulation task, a data storage configured to store data related to the simulation task based on a data storage policy that is set in advance of the execution of the simulation tasks, and a data updater configured to update the data stored in the data storage to most recent data by comparing the data stored in the data storage with data stored in another simulation apparatus.
    Type: Application
    Filed: December 28, 2015
    Publication date: May 12, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Chul CHO, Seong-Hoon JEONG, Jin-Sae JUNG
  • Publication number: 20160124866
    Abstract: A cache memory and a method of managing the same are provided. The method of managing a cache memory includes determining whether a number of bits of a data bandwidth stored in a bank is an integer multiple of a number of bits of unit data in data to be stored, storing first unit data, among the data to be stored, in a first region of a first address in the bank in response to the number of bits of the data bandwidth not being the integer multiple of the number of bits of the unit data, and storing part of second unit data, among the data to be stored, in a second region of the first address.
    Type: Application
    Filed: May 19, 2015
    Publication date: May 5, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seong Hoon JEONG, Woong SEO, Sang Heon LEE, Sun Min KWON, Ho Young KIM, Hee Jun SHIM
  • Publication number: 20160110889
    Abstract: Provided is a method of processing a texture. The method includes acquiring texture position information in a texture image corresponding to pixel position information of pixels constituting a frame, acquiring texture classification information (TCI) representing a similarity between respective texture factors of two or more classified regions in the texture image based on the texture position information, determining an amount of texture data requested from a memory according to the TCI, and reading texture data corresponding to the determined amount of texture data based on the texture position information.
    Type: Application
    Filed: July 31, 2015
    Publication date: April 21, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hee Jun SHIM, Soo Jung RYU, Sang Heon LEE, Sun Min KWON, Ho Young KIM, Seong Hoon JEONG
  • Publication number: 20160098780
    Abstract: The present invention provides a merchandise sales service device based on dynamic scene change, a merchandise sales system based on dynamic scene change, a method for selling merchandise based on dynamic scene change, and a non-transitory computer readable storage medium having computer program recorded thereon. That is, it is possible to transmit information about a commodity and image information of the commodity to user equipment by efficiently configuring images and dynamically changing the images in a commodity purchase procedure. Accordingly, a user can acquire detailed information about a commodity and carefully purchase the commodity, similar to actually purchasing the commodity at an offline store. Further, it is possible to reduce the rate of returning of purchased commodities for the seller of the commodities.
    Type: Application
    Filed: September 22, 2015
    Publication date: April 7, 2016
    Inventors: Seong Hoon JEONG, Sung Bak BAEK
  • Publication number: 20160042116
    Abstract: An apparatus for generating a test case includes a constrained description generator configured to define a plurality of constrained verification spaces in a total verification space, and generate a constrained description for each of the plurality of constrained verification spaces; and a test case generator configured to generate a test case using the constrained description.
    Type: Application
    Filed: October 22, 2015
    Publication date: February 11, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seong-Hoon Jeong, Moo-Kyoung Chung, Young-Chul Cho, Hee-Jun Shim, Jin-Sae Jung, Yen-Jo Han
  • Patent number: 9252244
    Abstract: The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: February 2, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JinBum Kim, Seong Hoon Jeong, Jeon Il Lee, Seokhoon Kim, Kwan Heum Lee, Choeun Lee, Yu-Jin Pyo
  • Patent number: 9247199
    Abstract: An information providing method and an electronic apparatus thereof are provided. According to the information providing method of the electronic apparatus, when a video call is made, a user making the video call is identified, at least one piece of information-of-interest of the identified user is acquired based on user's usage information on social network services (SNSs), and the at least one piece of information-of-interest is displayed on a video call screen.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: January 26, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-hwan Lee, Pill-kyoung Moon, Soo-yeoun Yoon, Sang-joon Lee, Jeong-yeon Lee, Jun-Ho Lee, Seong-hoon Jeong, Bong-hyun Cho
  • Publication number: 20160005852
    Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.
    Type: Application
    Filed: April 20, 2015
    Publication date: January 7, 2016
    Inventors: Sung-Min Kim, Kyung-Seok Oh, Cheol Kim, Heon-Jong Shin, Jong-Ryeol Yoo, Hyun-Jung Lee, Seong-Hoon Jeong
  • Patent number: 9202844
    Abstract: A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: December 1, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Jong Han, Yoon-Goo Kang, Won-Seok Yoo, Kong-Soo Lee, Han-Jin Lim, Seong-Hoon Jeong
  • Patent number: 9190495
    Abstract: A recessed channel array transistor may include a substrate, a gate oxide layer, a gate electrode and source/drain regions. The substrate may have an active region and an isolation region. A recess may be formed in the active region. The gate oxide layer may be formed on the recess and the substrate. The gate oxide layer may include a first portion on an intersection between a side end of the recess and a sidewall of the active region and a second portion on a side surface of the recess. The first portion may include a thickness greater than about 70% of a thickness of the second portion. The gate electrode may be formed on the gate oxide layer. The source/drain regions may be formed in the substrate. Thus, the recessed channel array transistor may have a decreased leakage current and an increased on-current.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: November 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Do Ryu, Dong-Chan Kim, Seong-Hoon Jeong, Si-Young Choi, Yu-Gyun Shin, Tai-Su Park, Jong-Ryeol Yoo, Jong-Hoon Kang
  • Publication number: 20150305032
    Abstract: A method of transmitting a control signal using efficient multiplexing is disclosed. The present invention includes the steps of multiplexing a plurality of 1-bit control signals within a prescribed time-frequency domain by code division multiple access (CDMA) and transmitting the multiplexed control signals, wherein a plurality of the 1-hit control signals include a plurality of the 1-bit control signals for a specific transmitting side. Accordingly, reliability on 1-bit control signal transmission can be enhanced.
    Type: Application
    Filed: June 29, 2015
    Publication date: October 22, 2015
    Applicant: LG Electronics Inc.
    Inventors: Hak Seong KIM, Sung Duk CHOI, Ki Jun KIM, Suk Hyon YOON, Joon Kui AHN, Bong Hoe KIM, Dong Youn SEO, Young Woo YUN, Jung Hoon LEE, Seong Hoon JEONG
  • Patent number: 9141498
    Abstract: A method for verifying an operation of a reconfigurable processor is provided. The method includes generating a random test program using a test description and an architecture description, executing the generated random test program in the reconfigurable processor and in a simulator, and then comparing types of output values in the execution result.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: September 22, 2015
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Seong-hoon Jeong, Bernhard Egger, Daeyong Shin, Changyeon Jo
  • Patent number: 9106379
    Abstract: A method of transmitting a control signal using efficient multiplexing is disclosed. The present invention includes the steps of multiplexing a plurality of 1-bit control signals within a prescribed time-frequency domain by code division multiple access (CDMA) and transmitting the multiplexed control signals, wherein a plurality of the 1-hit control signals include a plurality of the 1-bit control signals for a specific transmitting side. Accordingly, reliability on 1-bit control signal transmission can be enhanced.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: August 11, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Hak Seong Kim, Sung Duk Choi, Ki Jun Kim, Suk Hyon Yoon, Joon Kui Ahn, Bong Hoe Kim, Dong Youn Seo, Young Woo Yun, Jung Hoon Lee, Seong Hoon Jeong
  • Publication number: 20150206955
    Abstract: The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.
    Type: Application
    Filed: September 26, 2014
    Publication date: July 23, 2015
    Inventors: JinBum KIM, Seong Hoon JEONG, JEON IL LEE, SEOKHOON KIM, KWAN HEUM LEE, Choeun LEE, Yu-Jin PYO
  • Publication number: 20150206956
    Abstract: A method of manufacturing a semiconductor device includes forming an active pattern protruding from a semiconductor substrate, forming a dummy gate pattern crossing over the active pattern, forming gate spacers on opposite first and second sidewalls of the dummy gate pattern, removing the dummy gate pattern to form a gate region exposing an upper surface and sidewalls of the active pattern between the gate spacers, recessing the upper surface of the active pattern exposed by the gate region to form a channel recess region, forming a channel pattern in the channel recess region by a selective epitaxial growth (SEG) process, and sequentially forming a gate dielectric layer and a gate electrode covering an upper surface and sidewalls of the channel pattern in the gate region. The channel pattern has a lattice constant different from that of the semiconductor substrate.
    Type: Application
    Filed: September 29, 2014
    Publication date: July 23, 2015
    Inventors: JinBum KIM, JUNGHO YOO, BYEONGCHAN LEE, Choeun LEE, HYUN JUNG LEE, Seong Hoon JEONG, BONYOUNG KOO
  • Publication number: 20150100833
    Abstract: A method and apparatus for generating a test bench for verifying a processor decoder are provided. The method including receiving an architecture description comprising processor decoder information, parsing the received architecture description into information for verifying the processor decoder, and generating the test bench to verify the processor decoder based on the parsed information.
    Type: Application
    Filed: April 23, 2014
    Publication date: April 9, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seong-hoon JEONG, Ho-young KIM, Soo-jung RYU
  • Patent number: 8987694
    Abstract: Semiconductor devices, and methods of manufacturing the same, include a field region in a semiconductor substrate to define an active region. An interlayer insulating layer is on the semiconductor substrate. A semiconductor pattern is within a hole vertically extending through the interlayer insulating layer. The semiconductor pattern is in contact with the active region. A barrier region is between the semiconductor pattern and the interlayer insulating layer. The barrier region includes a first buffer dielectric material and a barrier dielectric material. The first buffer dielectric material is between the barrier dielectric material and the semiconductor pattern, and the barrier dielectric material is spaced apart from both the semiconductor pattern and the active region.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Jong Han, Kong-Soo Lee, Yoon-Goo Kang, Ho-Kyun An, Seong-Hoon Jeong
  • Publication number: 20140374827
    Abstract: A semiconductor device includes a fin type active pattern protruding above a device isolation layer, a gate electrode on the device isolation layer and intersecting the fin type active pattern, an elevated source/drain on the fin type active pattern at both sides of the gate electrode, and a fin spacer on a side wall of the fin type active pattern, the fin spacer having a low dielectric constant and being between the device isolation layer and the elevated source/drain.
    Type: Application
    Filed: April 23, 2014
    Publication date: December 25, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chan SUH, Chung-Geun KOH, Seong-Hoon JEONG, Kwan-Heum LEE, Hwa-Sung RHEE, Gyeom KIM