Abstract: The embodiments of the invention disclose a scanning type backlight module and a display device. Since a laser light source with good collimation is applied, during a display time of a frame, with the modulation of the optical path regulator, the laser emitted from the laser light source performs a progressive scanning for a region corresponding to at least one row of pixel units in a light guide plate or a display panel. Therefore, the problem of dynamic picture ghosting can be solved effectively; moreover, since the progressive scanning for the entire light guide plate can be realized by changing the light propagation path of the laser emitted from the laser light source with the optical path regulator, the number of the laser light sources can be reduced and the production cost can be decreased.

Abstract: An array substrate and a manufacturing method thereof, a display device and a thin film transistor are provided. The method includes forming a pattern that includes an active layer, a pixel electrode and a data line on a base substrate; forming a pattern that includes a gate insulating layer and at least two gate via-holes therein, the at least two gate via-holes are located in regions in the gate insulating layer that correspond to outer surroundings of the active layer and do not overlap with areas where the pixel electrode and the data line are located; forming a pattern that includes a gate line and at least two gate electrodes, the at least two gate electrodes are connected to the gate line, and are provided in the at least two gate via-holes, respectively. With this method, the fabricating process and the fabricating cost are saved.

Abstract: An array substrate and a manufacturing method thereof as well as a display device are disclosed. The array substrate includes a gate (21) and a gate insulating layers (22) of TFT formed in this order on a surface of a base substrate (20); a semiconductor active layer (23), an etching stop layer (24), and a source (251)/drain (252) of the TFT formed in this order on a surface of the gate insulating layer (22) corresponding to the gate (21) of the TFT. The source (251) and drain (252) of the TFT contact the semiconductor active layer (23) through respective vias. The array substrate further includes: a shielding electrode (26) formed between the gate (21) of the TFT and the base substrate (20); and an insulating layer (27) formed between the gate (21) of the TFT and the shielding electrode (26).

Abstract: The invention relates to a method for fabricating an array substrate, an array substrate and a display device. The method for fabricating an array substrate may comprise: forming a metal thin film layer for a source electrode, a drain electrode and a data line; forming a non-crystalline semiconductor thin film layer on the metal thin film layer; and performing annealing, so as to at least partly convert the non-crystalline semiconductor thin film layer into a metal semiconductor compound. By at least partly converting the non-crystalline semiconductor thin film layer into a metal semiconductor compound, the resulting metal semiconductor compound may prevent oxidative-corrosion of the metal thin film layer, such as a low-resistance metal (e.g., Cu or Ti) layer, in the subsequent procedures, which is favorable for the fabrication of a metal oxide thin film transistor using Cu or Ti.

Abstract: The invention relates to a method for fabricating an array substrate, an array substrate and a display device. The method for fabricating an array substrate may comprise: forming a pattern including a source electrode, a drain electrode and a data line; forming a non-crystalline semiconductor thin film layer; and performing annealing, so as to convert only the non-crystalline semiconductor thin film layer on the source electrode, drain electrode and data line to a metal semiconductor compound. By converting only the non-crystalline semiconductor thin film layer on the source electrode, drain electrode and data line into a metal semiconductor compound, the resulting metal semiconductor compound may prevent oxidative-corrosion of the metal thin film layer, such as a low-resistance metal (e.g., Cu or Ti) layer, in the subsequent procedures, which is favorable for the fabrication of a metal oxide thin film transistor using Cu or Ti.

Abstract: An array substrate and a manufacturing method thereof, a liquid crystal display panel and a display device are provided, the array substrate comprises a base substrate, and thin film transistors and pixel electrodes provided on the base substrate, the pixel electrode and the active layer in the thin film transistor are provided in the same layer. The active layer is formed of transparent oxide semiconductor material, and the concentration of carriers in the oxide semiconductor material may be increased by performing a plasma process on the oxide semiconductor material, thus the pixel electrode may be manufactured by using the oxide semiconductor material used for manufacturing the active layer, thereby the pixel electrode and the active layer can be provided in the same layer, the number of the masks can be reduced, the manufacturing process is simplified, production cost is saved, the productivity is increased, and the manufacturing time is shortened.

Abstract: The embodiments of the invention disclose an array substrate, a manufacturing method thereof and a display device.

Abstract: This disclosure provides a circuit substrate, a display panel and a display device for solving the problem of a relatively large electrode pitch of the circuit substrate in the prior art while reducing the production cost. Wherein the circuit substrate comprises a substrate, a plurality of first electrodes arranged on the substrate, and insulating convex structures arranged between the substrate and the first electrodes, the convex structure comprising a top face and a bottom face, wherein the top face contacts with the first electrode, and the bottom face contacts with the substrate.

Abstract: An array substrate and manufacturing method thereof, and a display device are provided. The array substrate comprises a TFT, an isolating layer (M), a pixel electrode (12) and a via (Q) formed through the isolating layer (14). A drain (6) of the TFT is electrically connected with the pixel electrode (12) through the via (Q). A first light blocking layer (14a) is formed on the pixel electrode (12) inside the via (Q). In the array substrate of the present invention, display effect deterioration due to the light reflection on pixel electrode inside the via is avoided by forming the light blocking layer on the pixel electrode inside the via. At the same time, prior to manufacturing the light blocking layer, a barrier layer is formed first to guarantee no residual of light blocking layer will be left on the substrate, thereby improving display performance of the display device.

Abstract: The present invention relates to a method for manufacturing a thin film transistor and an array substrate, and corresponding devices. In the thin film transistor manufacturing process, the base substrate is annealed after the formation of the patterns of the active layer, the source and the drain in the thin film transistor, so as to thermally diffuse ions of the source and the drain at an ohmic contact between the active layer and the source, as well as the drain, to the active layer, and further to provide the active layer with ions of the source and the drain for changing the components of the active layer, which reduces the resistance at the ohmic contact between the active layer and the source, as well as the drain, and guarantees the uniformity and reliability of the thin film transistor.

Abstract: Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.

Abstract: There are provided a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor is formed on a base substrate, and includes a gate electrode, an active layer, a source electrode and a drain electrode, the gate electrode includes a first section, a second section and a third section, the first section and the third section correspond to locations of the source electrode and the drain electrode, respectively; the base substrate has two recesses formed therein, and the first section and the third section are situated in the two recesses, respectively; the first section and the third section are covered with a filling layer; the filling layer and the second section are covered with a gate insulating layer, the active layer, the source electrode and the drain electrode in sequence.

Abstract: The present disclosure provides an array substrate, its manufacturing method, a display panel and a display device. A conductive metal pattern of the array substrate is covered with an oxygen barrier film.

Abstract: An array substrate and a manufacturing method thereof and a display device are provided, and the array substrate comprises: a substrate (1); a thin film transistor, a passivation layer (5) and a transparent electrode (6), sequentially formed on the substrate, wherein a groove (51) is formed in an upper surface of the passivation layer (5), and the transparent electrode (6) is provided in the groove (51).

Abstract: An embodiment of the present invention provides an array substrate, its manufacturing method and a display device. The method for manufacturing the array substrate comprises forming a common electrode with a slit structure on a substrate, and a pixel electrode with a slit structure not overlapping the common electrode. According to the present invention, it is able to reduce storage capacitance between the common electrode and the pixel electrode, thereby to ensure the image quality.

Abstract: The present invention provides an array substrate fabricating method. The array substrate fabricating method comprises the steps of: forming a semiconductor material layer and a first photoresist layer on a substrate successively, forming a pattern of an active layer comprising thin film transistors by using the semiconductor material layer and the first photoresist layer through photoetching technology, and reserving the first photoresist layer at least on conductive areas of the active layer when the thin film transistors are turned on; and forming a first material layer on the substrate on which the active layer is formed and the first photoresist layer is reserved on the active layer, and forming a pattern comprising first structures by using the first material layer through the photoetching technology. The method is adapted for fabricating an array substrate using metal oxide thin film transistors.

Abstract: An array substrate and a manufacturing method thereof, a display device and a thin film transistor are provided. The method includes forming a pattern that includes an active layer, a pixel electrode and a data line on a base substrate; forming a pattern that includes a gate insulating layer and at least two gate via-holes therein, the at least two gate via-holes are located in regions in the gate insulating layer that correspond to outer surroundings of the active layer and do not overlap with areas where the pixel electrode and the data line are located; forming a pattern that includes a gate line and at least two gate electrodes, the at least two gate electrodes are connected to the gate line, and are provided in the at least two gate via-holes, respectively. With this method, the fabricating process and the fabricating cost are saved.

Abstract: An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate comprises a plurality of gate lines and a plurality of data lines which intersect each other to define a plurality of pixel regions, each of the pixel regions comprises a thin film transistor and further comprises: a base substrate; more than one protrusion disposed apart from each other on the base substrate; a first electrode layer comprising at least one first electrode strip disposed in a gap between adjacent protrusions; a second electrode layer comprising at least one second electrode strip disposed on the protrusions.

Abstract: This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the existing OLED display device has low luminous efficiency. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, and a transparent second electrode, wherein the first electrode is a reflection layer, or the first electrode is transparent and has a reflection layer disposed thereunder; a transflective layer further away from the substrate than the OLED and forming a microcavity structure with the reflection layer; and a color filter film disposed between the OLED and the transflective layer and located in the microcavity structure. The present invention is particularly suitable for a WOLED display device.

Abstract: Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.