Abstract: The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise transparent conductive metal layer and the gate metal layer stacking on the substrate, each pixel electrode in the pixel electrode pattern comprises transparent conductive metal layer; a gate insulating layer on the pixel electrode pattern and the gate pattern, an active layer pattern on the gate insulating layer and corresponding to the gate electrode, a via hole in the gate insulating layer for exposing the pixel electrode; and a source/drain pattern on the gate insulating layer, the source/drain pattern comprises a data scanning line crossing with the gate scanning line, source and drain electrodes of the transistor, and the drain electrode is in contact with the pixel electrode through the via hole.

Abstract: An embodiment of the invention provides a color filter substrate comprising first black matrixes; color resin units; and a protection layer. Each of the color resin units is formed between two adjacent first black matrixes, the protection layer is formed on the first black matrixes and the color resin units, second black matrixes are formed, each corresponding to one first black matrix, on the protection layer for blocking reflected light from the first black matrixes from entering TFT channel regions on an array substrate to be provided to oppose the color filter substrate.

Abstract: An embodiment of the disclosed technology provides a method of manufacturing an array substrate, comprising: a first mask process of forming an inorganic material protrusion on a base substrate; a second mask process of forming a reflective region pattern, a gate line, a gate electrode branched from the gate line, and a common electrode; a third mask process of forming an active island and a data line formed and forming a source electrode connected to the data line and a drain electrode on the active island and a channel; a fourth mask process of forming an insulation material layer, treating the insulation material layer to form a planarization layer, and forming a through hole above the drain electrode; and a fifth mask process of forming a pixel electrode and connected to the drain electrode via the through hole in a reflective region.

Abstract: A manufacturing method of an array substrate, comprising the following steps: S1 forming a gate signal line and a gate electrode on a base substrate, successively depositing a gate insulating layer, an active layer, and a metal layer, faulting a mask formed of photoresist on the metal layer, and removing the metal layer outside a region for forming a data line and source/drain electrodes through the mask; S2. simultaneously etching the active layer and ashing the photoresist so as to expose the metal layer within a channel region; S3. etching the active layer exposed by the photoresist after being ashed after the step S2; S4. removing the metal layer within the channel region.

Abstract: The embodiment of the invention provides a manufacturing method for a thin film transistor liquid crystal display (TFT-LCD) array substrate, the manufacturing method comprises: step 1, depositing a transparent conductive film, a source/drain metal film and a doped semiconductor film on a transparent substrate sequentially, forming patterns of a doped semiconductor layer, a source electrode and a drain electrode of a thin film transistor, a data line and a pixel electrode by a first patterning process, wherein the doped semiconductor layer remains on the source electrode and the drain electrode; Step 2, depositing a semiconductor film on the whole transparent substrate after Step 1, forming a pattern of a semiconductor layer which includes a channel of the thin film transistor by a second patterning process; Step 3, depositing an insulating film and a gate metal film on the whole transparent substrate after Step 2, forming patterns of a gate line and a gate electrode of the thin film transistor by a third patt

Abstract: A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.

Abstract: An embodiment of the invention provides a method for manufacturing an array substrate, wherein the procedure for forming a data line, an active layer with a channel, a source electrode, a drain electrode and a pixel electrode comprises applying a photoresist on a data line metal thin film and performing exposure and development processes by using a multi-tone mask so as to form a photoresist pattern including a third thickness region, a second thickness region and a first thickness region whose thicknesses are successively increased, the third thickness region at least corresponding to the pixel electrode, the second thickness region corresponding to the data line, the active layer, the source electrode and the drain electrode, and the first thickness region corresponding to the other regions.

Abstract: Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including source electrodes, drain electrodes, data lines and pixel electrodes; forming a semiconductor film and patterning it to form a pattern of the impurity-doped semiconductor layer and a pattern of the semiconductor layer including TFT channels; forming an insulating film and a second metal film, and patterning the stack of the films to form patterns including connection holes of the data lines in a PAD region, gate lines, gate electrodes and common electrode lines; forming a second transparent conductive film, and patterning it to form patterns including the common electrode.

Abstract: A method for fabricating a thin film pattern and a method for fabricating an array substrate are provided. The method for fabricating a thin film pattern comprises: forming a first film and a second film sequentially; applying a layer of photoresist on the second film; forming a photoresist pattern comprising a totally left region, a partially left region and a totally removed region; performing a first wet etching on the second film in the totally removed region; performing a first dry etching on the first film in the totally removed region to form a first pattern, and etching the photoresist layer to remove the photoresist in the partially left region to expose the second film in the partially left region; performing a second wet etching on the second film in the partially left region; performing a second dry etching to form a second pattern; and removing the residual photoresist.

Abstract: An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.

Abstract: The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise transparent conductive metal layer and the gate metal layer stacking on the substrate, each pixel electrode in the pixel electrode pattern comprises transparent conductive metal layer; a gate insulating layer on the pixel electrode pattern and the gate pattern, an active layer pattern on the gate insulating layer and corresponding to the gate electrode, a via hole in the gate insulating layer for exposing the pixel electrode; and a source/drain pattern on the gate insulating layer, the source/drain pattern comprises a data scanning line crossing with the gate scanning line, source and drain electrodes of the transistor, and the drain electrode is in contact with the pixel electrode through the via hole.

Abstract: A method for manufacturing an array substrate of liquid crystal display is performed with the following steps: providing a substrate having gate lines, a gate insulating layer and an active layer pattern formed thereon in this order; depositing a first transparent conductive layer and a source/drain metal layer in this order on the substrate; forming a photoresist layer on the source/drain metal layer through a triple-tone mask; performing a wet-etching process on the source/drain metal layer and the first transparent conductive layer exposed from the photoresist layer; performing a first ashing process on the photoresist layer and performing a dry-etching process on the source/drain metal layer, the first transparent conductive layer and the active layer pattern exposed by the first ashing process; performing a second ashing process on the photoresist layer and performing a wet-etching process on the source/drain metal layer exposed by the second ashing process; and removing the remaining photoresist layer.

Abstract: The present invention discloses a method for manufacturing thin film structure, which comprises the following steps: providing a substrate having a first recess and a second recess formed therein with the first recess being deeper than the second recess; depositing a first material layer and a second material layer of different thicknesses successively on the substrate; and grinding the substrate so that a flat upper surface is formed and the first material layer and the second material layer are remained in the first recess while only the first material layer is remained in the second recess. The present invention also discloses a method for manufacturing fringe field switching type liquid crystal display array substrate. With the present invention, it is possible to make the upper surface flat while forming patterns on two layers of thin films respectively by using a single mask.

Abstract: A manufacturing method for an FFS type TFT-LCD array substrate comprises: depositing a first metal film on a transparent substrate, and form a gate line, a gate electrode and a common electrode line by a first patterning process; depositing a gate insulating layer, an active layer film and a second metal film sequentially and patterning the second metal film and the active layer film by a second patterning process; Step 3 depositing a first transparent conductive film and patterning the first transparent conductive film, the second metal film and the active layer film by a third patterning process; depositing a passivation layer, forming a connection hole by patterning the passivation layer through the fourth patterning process, performing an ashing process on photoresist used in the fourth patterning process, depositing a second transparent conductive layer on the remaining photoresist, and forming a common electrode by a lifting-off process.

Abstract: A gray scale mask for fabricating a thin film transistor, comprising: a source mask region; a drain mask region; and a channel mask region between the source mask region and the drain mask region, wherein a plurality of light-blocking bars are arranged regularly in the channel mask region, and the light-blocking bars are perpendicular to a center line of the channel mask region.

Abstract: The embodiment of the invention provides a manufacturing method for a thin film transistor liquid crystal display (TFT-LCD) array substrate, the manufacturing method comprises: step 1, depositing a transparent conductive film, a source/drain metal film and a doped semiconductor film on a transparent substrate sequentially, forming patterns of a doped semiconductor layer, a source electrode and a drain electrode of a thin film transistor, a data line and a pixel electrode by a first patterning process, wherein the doped semiconductor layer remains on the source electrode and the drain electrode; Step 2, depositing a semiconductor film on the whole transparent substrate after Step 1, forming a pattern of a semiconductor layer which includes a channel of the thin film transistor by a second patterning process; Step 3, depositing an insulating film and a gate metal film on the whole transparent substrate after Step 2, forming patterns of a gate line and a gate electrode of the thin film transistor by a third patt

Abstract: The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer.

Abstract: An embodiment of the invention provides a color filter substrate comprising first black matrixes; color resin units; and a protection layer. Each of the color resin units is formed between two adjacent first black matrixes, the protection layer is formed on the first black matrixes and the color resin units, second black matrixes are formed, each corresponding to one first black matrix, on the protection layer for blocking reflected light from the first black matrixes from entering TFT channel regions on an array substrate to be provided to oppose the color filter substrate.

Abstract: A method for manufacturing an array substrate of liquid crystal display comprising the following steps: providing a substrate having gate lines, a gate insulating layer and an active layer pattern formed thereon in this order; depositing a first transparent conductive layer and a source/drain metal layer in this order on the substrate; forming a photoresist pattern layer on the source/drain metal layer through a triple-tone mask; performing a wet-etching process on the source/drain metal layer and the first transparent conductive layer exposed from the photoresist pattern layer; performing a first ashing process on the photoresist pattern layer and performing a dry-etching process on the source/drain metal layer, the first transparent conductive layer and the active layer pattern exposed by the first ashing process; performing a second ashing process on the photoresist pattern layer and performing a wet-etching process on the source/drain metal layer exposed by the second ashing process; and removing the rema

Abstract: The present invention discloses a method for manufacturing thin film structure, which comprises the following steps: providing a substrate having a first recess and a second recess formed therein with the first recess being deeper than the second recess; depositing a first material layer and a second material layer of different thicknesses successively on the substrate; and grinding the substrate so that a flat upper surface is formed and the first material layer and the second material layer are remained in the first recess while only the first material layer is remained in the second recess. The present invention also discloses a method for manufacturing fringe field switching type liquid crystal display array substrate. With the present invention, it is possible to make the upper surface flat while forming patterns on two layers of thin films respectively by using a single mask.