Abstract: The present invention relates to an electroluminescence display panel and a method of driving the same. The electroluminescence display panel comprises a plurality of pixels arranged in a matrix, each of the pixels including a red sub-pixel, a green sub-pixel and a blue sub-pixel. The blue sub-pixel includes at least a first blue sub-sub-pixel and a second blue sub-sub-pixel. In operation, the first blue sub-sub-pixel and the second blue sub-sub-pixel are alternately driven among frames.

Abstract: A method for fabricating array substrate, an array substrate and a display device. The method for fabricating the array substrate comprises forming a thin film transistor, a first transparent electrode (14) and a second transparent electrode (19), wherein a multi dimensional electric field is created by the first transparent electrode (17) and the second transparent electrode (19), wherein forming the first transparent electrode (17) comprises: forming a metal oxide film presenting semiconductor properties; forming the first transparent electrode (17) by subjecting a portion of the metal oxide film to metallization treatment, and forming a semiconductor active layer (141) from a portion which is not subjected to the metallization treatment.

Abstract: This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the existing OLED display device has low luminous efficiency. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, and a transparent second electrode, wherein the first electrode is a reflection layer, or the first electrode is transparent and has a reflection layer disposed thereunder; a transflective layer further away from the substrate than the OLED and forming a microcavity structure with the reflection layer; and a color filter film disposed between the OLED and the transflective layer and located in the microcavity structure. The present invention is particularly suitable for a WOLED display device.

Abstract: This invention provides an array substrate, a method for fabricating the same, and an OLED display device. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, a second electrode, wherein the first electrode is transparent, and the second electrode is a transflective layer, or the second electrode is transparent and has a transflective layer disposed thereon; a reflection layer disposed between the TFT drive layer and the OLED and forming a microcavity structure with the transflective layer, and a reflective surface of the reflection layer has a concave-convex or corrugated structure disposed thereon for causing diffuse reflection of light; and a color filter film disposed between the reflection layer and the OLED and located in the microcavity structure.

Abstract: The present invention provides an open-type head mount display device and a display method thereof. The open-type head mount display device according to the present invention comprises a display unit for generating display images; a focusing lens unit for adjusting the object distance of a display image from a user's eye; an image acquisition unit for acquiring the image of the two eyes of the user; a focal distance analyzing unit for obtaining the focal distance of the user's eye according to the image of the two eyes of the user; and a lens adjusting unit for adjusting the position of the focusing lens unit in the light ray propagation direction of the display image according to a control command from the analyzing unit, so that the object distance of the display image is matched with the current focal distance of the user's eye.

Abstract: An embodiment of the invention provides an array substrate for a liquid crystal display comprising a substrate and a gate scanning line, a thin film transistor, a data line, and a passivation layer on the substrate, the passivation layer covering the gate scanning line, the thin film transistor, the data line, and a through hole being formed in the passivation layer. A pixel electrode is formed on the passivation layer and comprises a transmissive part and a reflective part, the transmissive part comprises an amorphous-type indium tin oxide film and a poly-type indium tin oxide film below the amorphous-type indium tin oxide film, and the reflective part comprises the poly-type indium tin oxide film and a metal film covering the poly-type indium tin oxide film.

Abstract: An embodiment of the invention provides a method for manufacturing an array substrate, wherein the procedure for forming a data line, an active layer with a channel, a source electrode, a drain electrode and a pixel electrode comprises applying a photoresist on a data line metal thin film and performing exposure and development processes by using a multi-tone mask so as to form a photoresist pattern including a third thickness region, a second thickness region and a first thickness region whose thicknesses are successively increased, the third thickness region at least corresponding to the pixel electrode, the second thickness region corresponding to the data line, the active layer, the source electrode and the drain electrode, and the first thickness region corresponding to the other regions.

Abstract: Embodiments of the present invention provide a thin film transistor, an array substrate and a display device. The thin film transistor comprises a gate layer, a first insulating layer, an active layer, an etch stop layer and a source/drain electrode layer, wherein the active layer is made of a metal oxide material, the first insulating layer, the active layer, the etch stop layer and the source/drain electrode layer are sequentially stacked from bottom to top, the source/drain electrode layer contains an interval separating a source electrode and a drain electrode therein, the etch stop layer is located below the interval, and the etch stop layer has a width greater than that of the interval, and the first insulating layer comprises a laminate of a first sub-insulation layer and a second sub-insulation layer, the second sub-insulation layer is in contact with the active layer and made of an oxygen-rich insulating material.

Abstract: An embodiment of the present invention provides a fabricating method of a thin film transistor, a fabricating method of an array substrate, and a display device. The fabricating method of a thin film transistor comprises: forming a gate electrode on a substrate; and forming a gate insulating layer, a semiconductor layer, source and drain electrodes and a channel region on the substrate, wherein, the semiconductor layer is formed of a metal oxide, and two etching steps are used to form the channel region, and in a first etching step, a part of a source-drain metal layer above the semiconductor layer corresponding to the channel region is removed by using a dry etching, and in a second etching step, a remaining part of the source-drain metal layer above the semiconductor layer corresponding to the channel region is removed by using a wet etching, thereby forming the channel region.

Abstract: Embodiments of the invention relate to a TFT, a mask for manufacturing the TFT, an array substrate and a display device. A channel of the TFT is formed by using a single slit mask. The channel of the TFT has a bent portion and extension portions provided on both sides of the bent portion, and a channel width of the bent portion is larger than a channel width of the extension portion.

Abstract: Disclosed are a touch liquid crystal display device, a liquid crystal display panel, and an upper substrate. The liquid crystal display panel comprises an upper substrate (10?) and an array substrate as a lower substrate (20?), the array substrate includes a thin film transistor (201?), a black matrix (204?), a color resin layer (205?), a pixel electrode (202?) and a spacer (30?), and the upper substrate (10?) includes a base substrate (102?), a touch sensor (101?) formed on one side of the base substrate and a common electrode (104?) formed on the other side of the base substrate. The upper substrate (10?) has a simplified structure, and therefore it is possible that production costs can be decreased, and the upper substrate can be avoided from being damages during manufacture.

Abstract: Embodiments of the invention relate to an array substrate, a manufacturing method thereof and a display device comprising the array substrate. The array substrate comprises a gate line and a data line which define a pixel region, the pixel region comprises a thin film transistor region and an electrode pattern region, a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode and a passivation layer are formed in the thin film transistor region, the gate insulation layer, a pixel electrode, the passivation layer and a common electrode are formed in the electrode pattern region, and the common electrode and the pixel electrode form a multi-dimensional electric field. A color resin layer is formed between the gate insulation layer and the pixel electrode.

Abstract: Disclosed are an array substrate, a method for fabricating the same and a display device. The array substrate comprises: a substrate, a gate electrode, a gate insulating layer as well as an active layer, and a source/drain metal layer formed on the substrate, the source/drain metal layer is configured for forming a source electrode, a drain electrode and a channel region, wherein a region of the S/D metal layer for forming the channel region is at a lower height than other region of the S/D metal layer for forming the source electrode and the drain electrode.

Abstract: The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer.

Abstract: A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.

Abstract: Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including source electrodes, drain electrodes, data lines and pixel electrodes; forming a semiconductor film and patterning it to form a pattern of the impurity-doped semiconductor layer and a pattern of the semiconductor layer including TFT channels; forming an insulating film and a second metal film, and patterning the stack of the films to form patterns including connection holes of the data lines in a PAD region, gate lines, gate electrodes and common electrode lines; forming a second transparent conductive film, and patterning it to form patterns including the common electrode.

Abstract: A method for fabricating a thin film pattern and a method for fabricating an array substrate are provided. The method for fabricating a thin film pattern comprises: forming a first film and a second film sequentially; applying a layer of photoresist on the second film; forming a photoresist pattern comprising a totally left region, a partially left region and a totally removed region; performing a first wet etching on the second film in the totally removed region; performing a first dry etching on the first film in the totally removed region to form a first pattern, and etching the photoresist layer to remove the photoresist in the partially left region to expose the second film in the partially left region; performing a second wet etching on the second film in the partially left region; performing a second dry etching to form a second pattern; and removing the residual photoresist.

Abstract: The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer.

Abstract: A manufacturing method for an FFS type TFT-LCD array substrate comprises: depositing a first metal film on a transparent substrate, and form a gate line, a gate electrode and a common electrode line by a first patterning process; depositing a gate insulating layer, an active layer film and a second metal film sequentially and patterning the second metal film and the active layer film by a second patterning process; Step 3 depositing a first transparent conductive film and patterning the first transparent conductive film, the second metal film and the active layer film by a third patterning process; depositing a passivation layer, forming a connection hole by patterning the passivation layer through the fourth patterning process, performing an ashing process on photoresist used in the fourth patterning process, depositing a second transparent conductive layer on the remaining photoresist, and forming a common electrode by a lifting-off process.

Abstract: A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.