Abstract: A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: A method includes forming a first dielectric layer, forming a first redistribution line comprising a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes forming a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, with a first center of conductive pad being offsetting from a second center of the conductive bump. The second via is further offset from the second center of the conductive bump.

Abstract: A method for forming a chip package structure. The method includes bonding first connectors over a front surface of a semiconductor wafer. The method also includes dicing the semiconductor wafer from a rear surface of the semiconductor wafer to form semiconductor dies and mounting first and second semiconductor dies in the semiconductor dies over a top surface of the interposer substrate. The method further forming an encapsulating layer over the top surface of the interposer substrate to cover the first semiconductor die and the second semiconductor die. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die, and upper portions of the first sidewall and the second sidewall have a tapered contour, to define a top die-to-die distance and a bottom die-to-die distance that is less than the top die-to-die distance.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a boundary and a first conductive trace configured to be coupled to a first conductive pad disposed within the boundary of the substrate. The first conductive trace is inclined with respect to the boundary of the substrate.

Abstract: A system for a semiconductor fabrication facility comprises a transporting tool configured to move a carrier, a first manufacturing tool configured to accept the carrier facing in a first direction, a second manufacturing tool configured to accept the carrier facing in the second direction, and an orientation tool. The carrier is moved to the orientation tool by the transporting tool prior to being moved to the first manufacturing tool or the second manufacturing tool by the transporting tool. The orientation tool rotates the carrier so that the carrier is accepted by the first manufacturing tool or the second manufacturing tool. The transporting tool, the first manufacturing tool, the second manufacturing tool and the orientation tool are physically separated from each other.

Abstract: A semiconductor device includes a substrate, a package structure, a first heat spreader, and a second heat spreader. The package structure is disposed on the substrate. The first heat spreader is disposed on the substrate. The first heat spreader surrounds the package structure. The second heat spreader is disposed on the package structure. The second heat spreader is connected to the first heat spreader. A material of the first heat spreader is different from a material of the second heat spreader.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a first bottom electrode layer over a substrate. A ferroelectric switching layer is disposed over the first bottom electrode layer. A first top electrode layer is disposed over the ferroelectric switching layer. A second bottom electrode layer is disposed between the first bottom electrode layer and the ferroelectric switching layer. The second bottom electrode layer is less susceptible to oxidation than the first bottom electrode layer.

Abstract: A computerized method of transforming an interactive graphical user interface according to machine learning includes generating a selectable user interface element corresponding to a persona. In response to a user selecting the user interface element, data structures related to the persona are extracted from a first data store. The data structures are transformed into a set of input variables at a data processing module and loaded at a model execution module. The model execution module generates a first output variable based on the set of input variables. An analysis module generates a second output variable based on the first input variable. The graphical user interface displays a first message, a second message, or a third message in response to conditions being met for the second output variable.

Abstract: An integrated circuit (IC) device includes a substrate with a power control circuit, front and back side metal layers, and first and second feed through vias (FTVs). The front side metal layer has first and second front side power rails. The back side metal layer has first and second back side power rails. The first FTV extends through the substrate, and couples the first front side power rail to the first back side power rail. The second FTV extends through the substrate, and couples the second front side power rail to the second back side power rail. The power control circuit is coupled to the first and second front side power rails, and is controllable to electrically connect the first front side power rail to the second front side power rail, or electrically disconnect the first front side power rail from the second front side power rail.

Abstract: A femoral lift apparatus includes a lift device and a hook device. The hook device is coupled to the lift device. The femoral lift apparatus is labor-saving and can avoid the problem that the conventional femoral lift apparatus may block the surgical view, hinder the operation position for a hip joint replacement surgery. With the assistance of this current femoral lift apparatus, the hip joint replacement surgery can be performed more smoothly.

Abstract: A computerized method of transforming an interactive graphical user interface according to machine learning includes generating a selectable user interface element corresponding to a persona. In response to a user selecting the user interface element, data structures related to the persona are extracted from a first data store. The data structures are transformed into a set of input variables at a data processing module and loaded at a model execution module. The model execution module generates a first output variable based on the set of input variables. An analysis module generates a second output variable based on the first input variable. The graphical user interface displays a first message, a second message, or a third message in response to conditions being met for the second output variable.

Abstract: A method executed at least partially by a processor includes determining a power parameter associated with a cell in an integrated circuit (IC) layout diagram. In response to the determined power parameter exceeding a design criterion, the method further includes performing a modification of the IC layout diagram, the modification including at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell. The determining the power parameter is performed before a routing operation in the IC layout diagram.

Abstract: A method includes forming a circuit region over a substrate. The circuit region includes at least one active region extending along a first direction, and at least one gate region extending across the at least one active region and along a second direction transverse to the first direction. At least one first input/output (TO) pattern and at least one second TO pattern are correspondingly formed in different first and second metal layers to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first TO pattern extends along a third direction oblique to both the first direction and the second direction. The at least one second TO pattern extends along a fourth direction oblique to both the first direction and the second direction, the fourth direction transverse to the third direction.

Abstract: A method of forming an integrated circuit includes forming at least a first or a second set of devices in a substrate, forming an interconnect structure over the first or second set of devices, and depositing a set of conductive structures on the interconnect structure. The first and second set of devices are configured to operate on a first supply voltage. Forming the interconnect structure includes depositing a set of insulating layers over the first or second set of devices, etching the set of insulating layers thereby forming a set of trenches, depositing a conductive material within the set of trenches, thereby forming a set of metal layers, and forming a portion of a header circuit between a first and a second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices.

Abstract: A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first layer including conductive lines (C_1st lines) which include interspersed alpha C_1st lines and beta C_1st lines designated correspondingly for first and second reference voltages; and forming a second layer over the first layer, the second layer including segments (C_2nd segments) which include interspersed alpha C_2nd segments and beta C_2nd segments designated correspondingly for the first and second reference voltages; and, relative to the first direction, each beta C_2nd segment being substantially asymmetrically between corresponding adjacent ones of the alpha C_2nd segments.

Abstract: The present disclosure provides methods and a non-transitory computer readable media for resistance and capacitance (RC) extraction. The method comprises: receiving an electronic layout; selecting a two-dimensional (2D) conductive element from the electronic layout, wherein an aspect ratio of the 2D conductive element is lower than a predetermined threshold; partitioning the 2D conductive element into a plurality of polygons; determining a parasitic capacitance value for each polygon; determining multiple parasitic resistance values for each polygon; determining a total capacitance value of the 2D conductive element based on the parasitic capacitance value for each polygon; and determining a total resistance value of the 2D conductive element based on the multiple parasitic resistance values for each polygon.

Abstract: Failure-in-time (FIT) evaluation methods for an IC are provided. Data representing a layout of the IC is accessed, and the layout includes a metal line and a plurality of vertical interconnect accesses (VIAs). The metal line is divided into a first sub-line with a first line width and a second sub-line with a second line width. A plurality of nodes are picked along the first and second sub-lines of the metal line. The metal line is divided into a plurality of metal segments based on the nodes. FIT value is determined for each of the metal segments to verify the layout and fabricate the IC. The first line width is greater than the second line width.

Abstract: A system includes a processor configured to determine a power parameter associated with a cell in an integrated circuit (IC) layout diagram. In response to the determined power parameter exceeding a design criterion, the processor is configured to perform a modification of the IC layout diagram, the modification including at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell. The power parameter includes at least one of a power density of a tile containing the cell, a voltage drop of the tile containing the cell, or a voltage drop of the cell.

Abstract: Disclosed are systems for applying materials to components. The system comprises a tool operable for transferring a portion of a material from a supply of the material to a component. A first portion of the tool may be configured for cutting along a side or edge of the portion of the material. A second portion of the tool may be configured for tamping, pressing, or pushing against the portion of the material to cause uncut sides or edges of the portion of the material attached to the supply of the material to be torn, severed, detached, or separated from the supply of the material.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure comprises a first semiconductor device, a second semiconductor device, and a first semiconductor component. The first semiconductor device and the second semiconductor device defining a channel region. The first semiconductor component is disposed in the channel region and configured to control states of a plurality of components in the channel region. The first semiconductor device and the first semiconductor component are located adjacent to a boundary, and the first semiconductor component is electrically isolated from the first semiconductor device.