Abstract: Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analog or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.

Abstract: Disclosed are devices and methods for storing values, symbols, parameters or conditions in memory devices as states, and subsequently mapping detected states as values, symbols parameters or conditions. In one implementation write operations may place first and second memory elements in a particular impedance state selected from between a low impedance or conductive state and a high impedance or insulative state. The high impedance or insulative state represents a first binary value or symbol while the low high impedance or conductive state represents a second binary value or symbol. Subsequently detected impedance states of the first and second memory elements may be mapped to the second binary value or symbol responsive to either of the detected impedance states being the high impedance or insulative state and the second detected impedance state.

Abstract: A power analysis apparatus includes antenna circuitry gathers readings of electromagnetic waves that emanate from a power delivery network of a circuit to be analysed. Spectral analysis circuitry analyses the readings to determine a resonance frequency from said electromagnetic waves and processing circuitry performs one or more actions based on the resonance frequency.

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

Abstract: A device comprising a storage array, the storage array comprising a first signal line and a second signal line, at least one correlated electron switch in electrical communication with the first signal line and the second signal line, and control circuitry for driving the correlated electron switch with at least one programming signal.

Abstract: Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: An apparatus and method are provided for processing a received input signal comprising a sequence of data blocks. Counter circuitry within the apparatus is arranged to receive a digital representation of the input signal, and for each data block generates a count value indicative of occurrences of a property of the digital representation (for example a rising edge or a falling edge) during an associated data block transmission period. Quantization circuitry then maps each count value to a soft decision value from amongst a predetermined set of soft decision values, where the number of soft decision values in the predetermined set exceeds a number of possible data values of the data block. The output circuitry then generates a digital output signal in dependence on the soft decision values.

Abstract: Broadly speaking, embodiments of the present technique provide a neuron for a spiking neural network, where the neuron is formed of at least one Correlated Electron Random Access Memory (CeRAM) element or Correlated Electron Switch (CES) element.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.

Abstract: According to one embodiment of the present disclosure, an apparatus is provided. The apparatus comprises a data input to receive a data signal. The apparatus further comprises a latching circuitry. The latching circuitry comprises a first Correlated Electron Switch (CES) element and a second CES element. The latching circuitry further comprises a control circuit coupled to the first CES element and the second CES element. The control circuit is configured to program impedance states of the first CES element and the second CES element based on the data signal.

Abstract: Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analogue or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.

Abstract: A cache apparatus is provided comprising a data storage structure providing N cache ways that each store data as a plurality of cache blocks. The data storage structure is organised as a plurality of sets, where each set comprises a cache block from each way, and further the data storage structure comprises a first data array and a second data array, where at least the second data array is set associative. A set associative tag storage structure stores a tag value for each cache block, with that set associative tag storage structure being shared by the first and second data arrays. Control circuitry applies an access likelihood policy to determine, for each set, a subset of the cache blocks of that set to be stored within the first data array.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: A device comprises a coupling configured to couple signals to and from a communications path including at least a part of a human or animal body; a data transmitter coupled to the coupling and configured to transmit, from time to time, a data signal of at least a predetermined temporal duration via the communications path; and a data receiver coupled to the coupling and configured to detect the presence of a signal on the communications path at sets of one or more successive detection instances disposed between successive transmissions of the data signal by the data transmitter, the data receiver being configured so that the successive detection instances of a set are temporally separated by no more than the predetermined temporal duration; the device being configured to initiate a processing operation in response to a detection by the data receiver of the presence of a signal on the communications path.

Abstract: A transition detection circuit (20) and method of operation of such a circuit are provided, the transition detection circuit (20) having pulse generation circuitry (25) to receive an input signal (10) and to generate a pulse signal in response to a transition in the input signal, and pulse detection circuitry (30) to assert an error signal on detection of the pulse signal generated by the pulse generation circuitry. The pulse generation circuitry has pulse control circuitry (35) to control a property of the pulse signal dependent on a timing window indication signal (40). In particular, when the pulse signal is generated at least partly whilst the timing window indication signal is set, the pulse control circuitry (35) controls the property of the pulse signal such that generated pulse signal is detected by the pulse detection circuitry (20).

Abstract: Disclosed are methods, systems and devices for powering up devices including non-volatile memory elements in an array of non-volatile memory elements. In one aspect, during a sequence for powering up an integrated device, non-volatile memory elements may be isolated from voltage supplies to avoid in advertent changes of memory states stored in the non-volatile memory elements.

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.