Abstract: A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

Abstract: A connector includes two housings coupled with each other to hold a cable therebetween. One of the housings includes a cable receiving portion for receiving the cable, a restricting portion adjacent to the cable receiving portion, a first wall portion formed outside the restricting portion and defining a space between the first wall portion and the restricting portion, and a first engaging portion inwardly protruding from the first wall portion. Another of the housings includes a cable pressing portion for pressing the cable towards the cable receiving portion and the restricting portion, and a second wall portion formed adjacent to the cable pressing portion and inserted into the space. The second wall portion has a second engaging portion extending outward from the second wall portion. The first and the second engaging potions are engaged with each other to prevent the housings from separating from each other.

Abstract: A connector includes two housings coupled with each other to hold a cable therebetween. One of the housings includes a cable receiving portion for receiving the cable, a restricting portion adjacent to the cable receiving portion, a first wall portion formed outside the restricting portion and defining a space between the first wall portion and the restricting portion, and a first engaging portion inwardly protruding from the first wall portion. Another of the housings includes a cable pressing portion for pressing the cable towards the cable receiving portion and the restricting portion, and a second wall portion formed adjacent to the cable pressing portion and inserted into the space. The second wall portion has a second engaging portion extending outward from the second wall portion. The first and the second engaging potions are engaged with each other to prevent the housings from separating from each other.

Abstract: A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.

Abstract: A semiconductor device includes: a semiconductor substrate; a separation region in the substrate; an embedded layer; a channel forming region; a source region; a drain region; a first electrode for the source region; a second electrode for the channel forming region; a third electrode for the drain region; a trench penetrating the channel forming region between the source region and the drain region; a trench gate electrode in the trench; an offset layer on a portion to be a current path provided by the trench gate electrode; and an electric field relaxation layer under the channel forming region and the offset layer connected to the channel forming region and covering a bottom of the trench.

Abstract: A semiconductor device includes a semiconductor substrate, a low concentration region, an intermediate concentration region, the first electrode region, and the second electrode region. The device has a current-voltage characteristic having the first and second break points. The voltage of the first break point is equal to or smaller than that of the second break point. The device has a maximum current density when the device is applied with an electrostatic discharge surge. The current density of the first break point is smaller than the maximum current density, and the current density of the second break point is larger than the maximum current density.

Abstract: The semiconductor output circuit of the invention has an insulated gate transistor including a first terminal, a second terminal and a gate terminal, a conductive state of the insulated gate transistor being controlled by a drive circuit connected to the gate terminal, a capacitive element and a first resistor connected in series between the second terminal and the gate terminal, and a second resistor connected between the gate terminal and the first terminal. The insulated gate transistor has a cell area formed on a semiconductor substrate, in which a plurality of unit cells each defining a unit transistor connected between the first and second terminals are laid out. The second resistor has such a resistance that all of the unit transistors defined by the unit cells are turned on uniformly when electrostatic discharge is applied to the first or second terminal.

Abstract: A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.

Abstract: An apparatus is provided for controlling a graphic equalizer which is implemented by digital filters, each being assignable to a frequency band for regulating a level of the frequency band. In the apparatus, a set of control devices are provided in correspondence to respective frequency bands, each control device being operable to specify the level of the corresponding frequency band to either of a reference level or other level than the reference level. An assignment section operates when a number of the digital filters is less than a total number of the frequency bands, for assigning the digital filters to the frequency bands which are specified with the levels other than the reference level. A control section controls remaining digital filters which are not assigned to any of the frequency bands in a through state.

Abstract: According to an aspect of the present invention, there is disclosed a magnetic resistive element comprising a first magnetic layer whose magnetized state changes in accordance with data, a nonmagnetic layer disposed on the first magnetic layer, and a second magnetic layer which is disposed on the nonmagnetic layer and whose magnetized state is fixed, wherein the first magnetic layer has a cross shape in which a maximum length of a first direction is L1 and a maximum length of a second direction crossing the first direction at right angles is L2, and the second magnetic layer has a tetragonal shape in which the maximum length of the first direction is L3 (?L1) and the maximum length of the second direction is L4 (<L2).

Abstract: To provide a resin molding machine that can reduce cost by eliminating the need for a residual-material remover, and can reduce cycle time and the amount of residual material, the resin molding machine includes a stationary cavity plate that has a gate communicating with a cavity, a sprue bushing in which a sprue is formed for feeding a molding material through the gate into the cavity, a runner plate disposed between the stationary cavity plate 13 and the sprue bushing, a cylinder unit (runner-plate driving mechanism) for rectilinearly reciprocating the runner plate between ejecting positions and via a molding position, the ejecting positions being separated from the molding position A and provided for ejecting the residual material, and an ejecting channel (residual-material ejecting mechanism) for ejecting the residual material at the ejecting positions.

Abstract: A dry forming apparatus includes a carrying table (mold-transfer mechanism) which transfers a mold containing a die and punch units at least between a powder supply stage, a pressing stage, and a formed-product removing stage, a pressing driving mechanism which drives the punch units for pressing in the pressing stage, a connecting mechanism which connects punch units to the pressing driving mechanism when the mold is transferred to the pressing stage, and releases the connection of the punch units, and a unit holding mechanism which holds the punch units while the units are transferred to the next stage.

Abstract: A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

Abstract: A method of reduction treatment of metal oxides characterized by using as a material a powder containing metal oxides and containing alkali metals and halogen elements and further, in accordance with need, carbon, mixing said material with water to produce a slurry, then dehydrating this and charging the dehydrated material, mixed with another material in accordance with need, into a rotary hearth type reduction furnace for reduction.

Abstract: A powder molding apparatus comprises a mold comprising a die having a powder molding space and upper and lower punch units, and a compression driving mechanism for performing compression molding by driving the upper and lower punch units independently, wherein molded articles formed by the compression molding are held by engaging lower first and second punches serving as a formed article holding mechanism at the time of transporting the molded articles. Thus, the molded articles can be prevented from falling or shifting while being transported between stages, thereby providing a powder molding apparatus capable of high speeds.

Abstract: The magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer which is provided between the second ferromagnetic layer and the third ferromagnetic layer and which transmits a change of magnetization direction of the third ferromagnetic layer to the second ferromagnetic layer; and a tunnel barrier layer provided between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.

Abstract: The present invention provides: a method for drying compacts containing water so as not to cause explosion and powdering; a method for reducing the compacts after being dried with great efficiency in a rotary-hearth-type reducing furnace; and a rotary-hearth-type metal reducing furnace. In the present invention, when compacts comprising powder containing metal oxide and carbon are dried, the critical value of a water evaporation rate, beyond which explosion occurs, is determined from the size and porosity of the compacts, then the water evaporation rate is controlled to a value not exceeding the critical value and, by so doing, the increase in the internal pressure of the compacts caused by the generation of water vapor is prevented. By the method, the explosion and cracking of the compacts are prevented.