Abstract: An ophthalmologic apparatus is provided, which is capable of more securely supporting left and right cheekbone portions of a subject in accordance with the size and shape of the subject's face allowing the subject to respond orally where the positions of the subject's eyes are fixed. The ophthalmologic apparatus includes a forehead contact portion coming into contact with the forehead of the subject, and a cheek contact portion coming into contact with the cheeks of the subject. The cheek contact portion includes a first cheek-contact body that supports one of the cheeks of the subject, a second cheek-contact body that supports the other one of the cheeks of the subject, and an opening/closing mechanism portion that opens and closes in a horizontal direction the first cheek-contact body and the second cheek-contact body in a direction of coming close to each other and a direction of separating from each other.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: There is provided an electronic component-embedded board. The electronic component-embedded board includes: a first insulating layer; a metal layer formed on the first insulating layer; a first electronic component disposed on the metal layer; a second insulating layer formed on the first insulating layer and the metal layer such that the first electronic component is buried in the second insulating layer; a second electronic component disposed above the second insulating layer; and a heat radiating member thermally connected to the metal layer exposed from the second insulating layer and thermally connected to the second electronic component.

Abstract: There is provided an electronic component-embedded board. The electronic component-embedded board includes: a first insulating layer; a metal layer formed on the first insulating layer; a first electronic component disposed on the metal layer; a second insulating layer formed on the first insulating layer and the metal layer such that the first electronic component is buried in the second insulating layer; a second electronic component disposed above the second insulating layer; and a heat radiating member thermally connected to the metal layer exposed from the second insulating layer and thermally connected to the second electronic component.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

Abstract: A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields.

Abstract: There is provided a sputter device in which a conductive target having a planar and circular shape is disposed so as to face a workpiece substrate mounted on a mounting part located within a vacuum chamber, includes: a direct current power supply configured to apply a negative direct current voltage to the target; an opposing electrode installed at the opposite side of the workpiece substrate from the target so as to face the target; and a target high-frequency power supply connected to the target and configured to supply high-frequency power to the target in order to generate a high-frequency electric field between the opposing electrode and the target, wherein the distance between the target and the workpiece substrate during a sputtering process being 30 mm or less.

Abstract: A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.

Abstract: A magnetron sputtering apparatus where a target is disposed to face a substrate installed in a vacuum chamber and magnets are disposed on a rear surface of the target, including a power supply unit configured to apply a voltage to the target; and a magnet array body including a magnet group arranged on a base body provided at the rear surface of the target. In the magnet array body, rod-shaped magnets each having different polarities at opposite ends thereof are disposed in a mesh shape on a surface of the base body facing the target; the mesh has a 2n polygonal shape (n being an integer greater than or equal to 2); permeable core members are disposed at intersection points of the mesh surrounded by the ends of the rod-shaped magnets; and end portions of the rod-shaped magnets which surround each of the core members have a same polarity.

Abstract: A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.

Abstract: An interconnect structure for an integrated circuit and method of forming the interconnect structure. The method includes depositing a metallic layer containing a reactive metal in an interconnect opening formed within a dielectric material containing a dielectric reactant element, thermally reacting at least a portion of the metallic layer with at least a portion of the dielectric material to form a diffusion barrier primarily containing a compound of the reactive metal from the metallic layer and the dielectric reactant element from the dielectric material, and filling the interconnect opening with Cu metal, where the diffusion barrier surrounds the Cu metal within the opening. The reactive metal can be Co, Ru, Mo, W, or Ir, or a combination thereof. The interconnect opening can be a trench, a via, or a dual damascene opening.

Abstract: A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.

Abstract: Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit.

Abstract: An interconnect structure is provided. The interconnect structure includes an interconnect opening formed within a dielectric material, a diffusion barrier on the dielectric material, where the diffusion barrier contains a compound from a thermal reaction between cobalt (Co) metal from at least a portion of a cobalt metal layer formed on the dielectric material and a dielectric reactant element from the dielectric material. The interconnect structure further includes a cobalt nitride adhesion layer in the interconnect opening, and a Cu metal fill in the interconnect opening, wherein the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal fill within the interconnect opening.

Abstract: The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.