Patents by Inventor Shih-Yao Lin

Shih-Yao Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220238387
    Abstract: A method includes depositing a dummy gate dielectric layer over a semiconductor region, depositing a dummy gate electrode layer, and performing a first etching process. An upper portion of the dummy gate electrode layer is etched to form an upper portion of a dummy gate electrode. The method further includes forming a protection layer on sidewalls of the upper portion of the dummy gate electrode, and performing a second etching process. A lower portion of the dummy gate electrode layer is etched to form a lower portion of the dummy gate electrode. A third etching process is then performed to etch the lower portion of the dummy gate electrode using the protection layer as an etching mask. The dummy gate electrode is tapered by the third etching process. The protection layer is removed, and the dummy gate electrode is replaced with a replacement gate electrode.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
  • Publication number: 20220223587
    Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.
    Type: Application
    Filed: January 11, 2021
    Publication date: July 14, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Ming-Ching Chang
  • Patent number: 11387341
    Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. Each of the plurality of semiconductor layers extends along a first lateral direction. The semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. The lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: July 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shih-Yao Lin, Chih-Han Lin, Hsiao Wen Lee
  • Publication number: 20220216322
    Abstract: Semiconductor devices and methods of forming are described herein. The methods include depositing a dummy gate material layer over a fin etched into a substrate. A gate mask is then formed over the dummy gate material layer in a channel region of the fin. A dummy gate electrode is etched into the dummy gate material using the gate mask. A top spacer is then deposited over the gate mask and along sidewalls of a top portion of the dummy gate electrode. An opening is then etched through the remainder of the dummy gate material and through the fin. A bottom spacer is then formed along a sidewall of the opening and separates a bottom portion of the dummy gate electrode from the opening. A source/drain region is then formed in the opening and the dummy gate electrode is replaced with a metal gate stack.
    Type: Application
    Filed: March 28, 2022
    Publication date: July 7, 2022
    Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chen-Ping Chen, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
  • Publication number: 20220215149
    Abstract: A method includes: training a machine learning model with a plurality of electronic circuit placement layouts; predicting, by the machine learning model, fix rates of design rule check (DRC) violations of a new electronic circuit placement layout; identifying hard-to-fix (HTF) DRC violations among the DRC violations based on the fix rates of the DRC violations of the new electronic circuit placement layout; and fixing, by an engineering change order (ECO) tool, the DRC violations.
    Type: Application
    Filed: January 4, 2021
    Publication date: July 7, 2022
    Inventors: Ching Hsu, Shih-Yao Lin, Yi-Lin Chuang
  • Publication number: 20220215556
    Abstract: A method, computer program, and computer system are provided for image segmentation. Image data, such as biological image data, is received. One or more objects associated with the received image data is detected. One or more regions of interest are determined within the receive image data corresponding to one or more segments based on the detected objects.
    Type: Application
    Filed: January 6, 2021
    Publication date: July 7, 2022
    Applicant: TENCENT AMERICA LLC
    Inventors: Hui Tang, Lianyi Han, Chao Huang, Shih-Yao Lin, Zhimin Huo, Wei Fan
  • Patent number: 11375945
    Abstract: A method and user device for determining a unified Parkinson's disease rating scale (UPDRS) value associated with a user of the user device include obtaining video data associated with a movement of a body part of the user. The UPDRS value is determined using a model and the video data associated with the movement of the body part of the user. The UPDRS value is provided to permit an evaluation of the user based on the UPDRS value.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: July 5, 2022
    Assignee: TENCENT AMERICA LLC
    Inventors: Lianyi Han, Hui Tang, Yusheng Xie, Shih-Yao Lin, Qian Zhen, Zhimin Huo, Wei Fan
  • Publication number: 20220189050
    Abstract: Systems and methods for obtaining hand images are provided. A method, performed by at least one processor that implements at least one network, includes obtaining a single source image, a three-dimensional (3D) hand pose of a first hand in the single source image, and a 3D target hand pose; and generating an image of a second hand, that has an appearance of the first hand and a pose of the 3D target hand pose, based on the single source image, the 3D hand pose, and the 3D target hand pose.
    Type: Application
    Filed: December 14, 2020
    Publication date: June 16, 2022
    Applicant: TENCENT AMERICA LLC
    Inventors: Shih-Yao LIN, Kun WANG, Hui TANG, Chao HUANG, Lianyi HAN, Wei FAN
  • Publication number: 20220181214
    Abstract: The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.
    Type: Application
    Filed: February 28, 2022
    Publication date: June 9, 2022
    Inventors: Shih-Yao Lin, Chih-Chung Chiu, Kuei-Yu Kao, Chen-Ping Chen, Chih-Han Lin
  • Patent number: 11353925
    Abstract: The present disclosure discloses a portable electronic device including a primary display panel, a keyboard module, a secondary display panel, and a support plate. The primary display panel includes a first pivot and a second pivot. The first pivot and the second pivot are disposed at the primary display panel. The keyboard module faces the primary display panel and includes a third pivot. One side of the secondary display panel is connected to the first pivot, and another side is a free side. The secondary display panel is flipped through the first pivot to be overlapped on an upper surface of the keyboard module or to abut against the upper surface at the free side. The support plate is flipped through the second pivot and the third pivot to be overlapped on the bottom surface of the primary display panel or to support the primary display panel.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: June 7, 2022
    Assignee: PEGATRON CORPORATION
    Inventors: Shih-Yao Lin, Tsung-Cheng Lin, Wen-Chung Wu, Tao-Hua Cheng, Pei-Yi Lee, Chia-Liang Chiang
  • Publication number: 20220173225
    Abstract: A method includes forming a dummy gate stack, etching the dummy gate stack to form an opening, depositing a first dielectric layer extending into the opening, and depositing a second dielectric layer on the first dielectric layer and extending into the opening. A planarization process is then performed to form a gate isolation region including the first dielectric layer and the second dielectric layer. The dummy gate stack is then removed to form trenches on opposing sides of the gate isolation region. The method further includes performing a first etching process to remove sidewall portions of the first dielectric layer, performing a second etching process to thin the second dielectric layer, and forming replacement gates in the trenches.
    Type: Application
    Filed: February 14, 2022
    Publication date: June 2, 2022
    Inventors: Shih-Yao Lin, Chih-Han Lin, Shu-Uei Jang, Ya-Yi Tsai, Shu-Yuan Ku
  • Publication number: 20220171482
    Abstract: A display device includes a display and a transflective module. The transflective module is disposed at one side of the display and includes a glass substrate and a transflective structure layer. The transflective structure layer is disposed on the glass substrate and located between the glass substrate and the display.
    Type: Application
    Filed: May 11, 2021
    Publication date: June 2, 2022
    Applicant: Unimicron Technology Corp.
    Inventors: Shih-Yao Lin, Ming-Chang Chan, Leng-Chieh Lin, Po-Ching Chan, Meng-Chia Chan, Kuo-Feng Cheng
  • Publication number: 20220161613
    Abstract: A Bluetooth tire pressure monitoring system (TPMS) includes a sensing host and a receiving host, and the sensing host includes a battery, a control unit, a Bluetooth transceiver unit, a boost/regulation circuit, a pressure sensing unit, an operational amplifier, a gravity sensing unit, a temperature sensing unit and a Bluetooth antenna. The Bluetooth TPMS utilizes low-power Bluetooth wireless communication technology to transmit and receive signals, so as to meet the requirement in low power consumption.
    Type: Application
    Filed: June 23, 2021
    Publication date: May 26, 2022
    Inventor: SHIH-YAO LIN
  • Publication number: 20220160311
    Abstract: An approach for determining a heart rate of a subject is performed by at least one processor and includes obtaining video data of the subject; detecting a face of the subject in the video data; selecting at least one region of interest (ROI) included in the face; acquiring photoplethysmography (PPG) signals based on the at least one ROI; and determining the heart rate of the subject based on the PPG signals
    Type: Application
    Filed: November 24, 2020
    Publication date: May 26, 2022
    Applicant: TENCENT AMERICA LLC
    Inventors: Huang CHAO, Lianyi HAN, Hui TANG, Shih-Yao LIN, Zhimin HUO, Wei FAN
  • Patent number: 11335466
    Abstract: A method and apparatus are provided that includes iteratively sampling candidates from medical records and evaluating whether ones of the candidates better explain a member from the medical records. The iterations replace the member with the candidates and depending on whether the candidates better explain the member from the medical records may be weighted in a next iteration.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: May 17, 2022
    Assignee: TENCENT AMERICA LLC
    Inventors: Yusheng Xie, Tao Yang, Min Tu, Nan Du, Shih-Yao Lin, Wei Fan
  • Publication number: 20220149181
    Abstract: A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.
    Type: Application
    Filed: January 24, 2022
    Publication date: May 12, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Chih-Han Lin, Shu-Uei Jang, Ya-Yi Tsai, Chi-Hsiang Chang, Tzu-Chung Wang, Shu-Yuan Ku
  • Publication number: 20220148453
    Abstract: Systems and methods for marker-free motion capture are provided. A method includes: obtaining a plurality of videos of a body of a person; estimating a three dimensional (3D) pose of the person based on the plurality of videos without depending on any marker on the person, the estimating including obtaining a set of 3D body joints; obtaining an animation of motion of the set of 3D body joints that corresponds to motion of the person during a time period; performing an analysis of the motion of the set of 3D body joints; and indicating a rehabilitation evaluation result of the analysis or a rehabilitation training suggestion, based on the analysis, via a display or a speaker.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 12, 2022
    Applicant: TENCENT AMERICA LLC
    Inventors: Shih-Yao LIN, Hui TANG, Chao HUANG, Lianyi HAN, Zhimin HUO, Wei FAN
  • Publication number: 20220147691
    Abstract: A method includes the following operations: receiving design rule violations of a first layout; classifying, according to first chip features of the first layout, a first violation of the design rule violations into a first class of predefined classes; generating a first vector array for at least one of the first chip features of the first layout, that is associated with the first violation; selecting, according to the first vector array, first operations from pre-stored operations; generating a second layout based on the first layout and the first operations.
    Type: Application
    Filed: December 8, 2020
    Publication date: May 12, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPNAY, LTD., TSMC NANJING COMPANY LIMITED
    Inventors: Yi-Lin CHUANG, Song LIU, Pei-Pei CHEN, Heng-Yi LIN, Shih-Yao LIN, Chin-Hsien WANG
  • Publication number: 20220139685
    Abstract: A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Inventors: Shih-Yao Lin, Stephane Ferrasse, Jaeyeon Kim, Frank C. Alford
  • Patent number: D950446
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: May 3, 2022
    Assignee: Unimicron Technology Corp.
    Inventors: Shih-Yao Lin, Ming-Yuan Hsu, Meng-Chia Chan, Kuo-Chuan Huang, Cheng-Jui Chang