Abstract: An auxiliary machine-driving device has a first idler roller disposed between an engine roller and a first rotating roller; a second idler roller disposed between the first rotating roller and a second rotating roller; a third idler roller disposed between the second rotating roller and the engine roller; and a linking mechanism driven by one actuator to switch the first idler roller between a state in which the first idler roller contacts the engine roller and the first rotating roller, and a state in which the first idler roller separates from the engine roller and the first rotating roller, and to switch at least one of the second and third idler rollers between a state in which the at least one roller contacts two rollers adjacent the at least one roller, and a state in which the at least one roller separates from the two rollers.

Abstract: An auxiliary machine-driving device is provided for a vehicle. The auxiliary machine-driving device has a first roller, a second roller, a third roller, a fourth roller and a fifth roller. The first roller rotates integrally with a rotary shaft of an engine. The second roller rotates integrally with a rotary shaft of a motor/generator. The third roller rotates integrally with a rotary shaft of an auxiliary machine. The fourth roller is provided between the first roller and the second roller. The fifth roller that always contacts the second roller and the third roller. The actuator switches the fourth roller between a contact state with the first and second rollers and a separation state from the first and second rollers.

Abstract: An auxiliary machine-driving device has a first idler roller having an outer peripheral surface biased into contact with the outer peripheral surfaces of a motor/generator roller and an engine roller, a second idler roller having an outer peripheral surface biased into contact with the outer peripheral surfaces of the engine roller and a rotating roller, and a third idler roller having an outer peripheral surface biased into contact with the outer peripheral surfaces of the rotating roller and the motor/generator roller. When the engine starts, the engine is started by transmitting the driving force of the motor/generator to the engine via the motor/generator roller, the first idler roller and the engine roller. After the engine starts, power is generated from the driving force of the engine being transmitted to the motor/generator via the engine roller, the second idler roller, the rotating roller, the third idler roller and the motor/generator roller.

Abstract: An auxiliary machine-driving device is provided for a vehicle. The auxiliary machine-driving device has a first roller, a second roller, a third roller, a fourth roller and a fifth roller. The first roller rotates integrally with a rotary shaft of an engine. The second roller rotates integrally with a rotary shaft of a motor/generator. The third roller rotates integrally with a rotary shaft of an auxiliary machine. The fourth roller is provided between the first roller and the second roller. The fifth roller that always contacts the second roller and the third roller. The actuator switches the fourth roller between a contact state with the first and second rollers and a separation state from the first and second rollers.

Abstract: An auxiliary machine-driving device has a first idler roller having an outer peripheral surface biased into contact with the outer peripheral surfaces of a motor/generator roller and an engine roller, a second idler roller having an outer peripheral surface biased into contact with the outer peripheral surfaces of the engine roller and a rotating roller, and a third idler roller having an outer peripheral surface biased into contact with the outer peripheral surfaces of the rotating roller and the motor/generator roller. When the engine starts, the engine is started by transmitting the driving force of the motor/generator to the engine via the motor/generator roller, the first idler roller and the engine roller. After the engine starts, power is generated from the driving force of the engine being transmitted to the motor/generator via the engine roller, the second idler roller, the rotating roller, the third idler roller and the motor/generator roller.

Abstract: An auxiliary machine-driving device has a first idler roller disposed between an engine roller and a first rotating roller; a second idler roller disposed between the first rotating roller and a second rotating roller; a third idler roller disposed between the second rotating roller and the engine roller; and a linking mechanism driven by one actuator to switch the first idler roller between a state in which the first idler roller contacts the engine roller and the first rotating roller, and a state in which the first idler roller separates from the engine roller and the first rotating roller, and to switch at least one of the second and third idler rollers between a state in which the at least one roller contacts two rollers adjacent the at least one roller, and a state in which the at least one roller separates from the two rollers.

Abstract: A security system includes: a first device that includes a first processor and a first target processor; and a second device that includes a second processor and a second target processor. The first processor executes a first process including: first protecting a first program as a monitoring target among programs operating on the first target processor; first decrypting encrypted data obtained by encrypting output data from the first program; and first encrypting the decrypted output data and causing the encrypted data of the output data to be transmitted to the second device. The second processor executes a second process including: second protecting a second program as a monitoring target among programs operating on the second target processor; second decrypting the transmitted encrypted data of the output data; and second encrypting the decrypted output data and outputting the encrypted data of the output data to the second program.

Abstract: A drive apparatus for a vehicle auxiliary device is provided that basically includes first and second drive sources, an auxiliary device, first, second and third rollers, first, second and third idler rollers and a roller pair selection mechanism. The first, second and third rollers are linked to rotary shafts of the first and second drive sources and the auxiliary device. The first, second and third idler rollers are disposed at gap positions formed between the first, second and third rollers. The roller pair selection mechanisms select a power-transmitting roller pair from among the first, second and third rollers by selectively moving the first, second and third idler rollers in roller contact directions, thereby interposing the first, second and third idler rollers therebetween.

Abstract: A drive apparatus for a vehicle auxiliary device is provided that basically includes first and second drive sources, an auxiliary device, first, second and third rollers, first, second and third idler rollers and a roller pair selection mechanism. The first, second and third rollers are linked to rotary shafts of the first and second drive sources and the auxiliary device. The first, second and third idler rollers are disposed at gap positions formed between the first, second and third rollers. The roller pair selection mechanisms select a power-transmitting roller pair from among the first, second and third rollers by selectively moving the first, second and third idler rollers in roller contact directions, thereby interposing the first, second and third idler rollers therebetween.

Abstract: A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

Abstract: A method of forming a group III nitride semiconductor comprises: preparing a group III nitride semiconductor which contains a p-type dopant or an n-type dopant; and performing a treatment of the group III nitride semiconductor by using a reducing gas and a nitrogen source gas to form a conductive group III nitride semiconductor. The treatment includes performing a first treatment of the group III nitride semiconductor by using a first treatment gas including the reducing gas and the nitrogen source gas, which are supplied to a treatment apparatus at a first flow rate and a second flow rate, respectively, and after the first treatment is performed, performing a second treatment of the group III nitride semiconductor by using a second treatment gas including the reducing gas and the nitrogen source gas, which are supplied to the treatment apparatus at a third flow rate and a fourth flow rate, respectively.

Abstract: A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively.

Abstract: A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0<X?1), a first AlGaN layer made of group III nitride-based semiconductor containing Al and disposed on the substrate, and a second AlGaN layer made of group III nitride-based semiconductor having a bandgap greater than the first AlGaN layer and disposed thereon. The full width at half maximum values of X-ray rocking curves for (0002) and (10-12) planes of the first AlGaN layer are less than 1000 arcseconds.

Abstract: A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide.

Abstract: In a group III nitride hetero junction transistor 11a, a second AlY1InY2Ga1-Y1-Y2N layer 15 forms a hetero junction 21 with a first AlX1InX2Ga1-X1-X2N layer 13a. A first electrode 17 forms a Schottky junction with the first AlX1InX2Ga1-X1-X2N layer 13a. The first AlX1InX2Ga1-X1-X2N layer 13a and the second AlY1InY2Ga1-Y1-Y2N layer 15 are provided over a substrate 23. The electrodes 17a, 18a, and 19a include a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration NC13 in the first AlX1InX2Ga1-X1-X2N layer 13a is less than 1×1017 cm?3. The dislocation density D in the second AlY1InY2Ga1-Y1-Y2N layer 15 is 1×108 cm?2. The hetero junction 21 generates a two-dimensional electron gas layer 25. These provide a low-loss gallium nitride based electronic device.

Abstract: Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

Abstract: Provided is a film deposition method capable of improving the crystal characteristic near an interface according to the lattice constant of a material that will constitute a thin film to be deposited. Specifically, a substrate is curved relative to the direction along one main surface on which the thin film is to be deposited, according to the lattice constant the material that will constitute the thin film to be deposited and the lattice constant of a material constituting the one main surface. The thin film is deposited on the one main surface of the substrate with the substrate curved.

Abstract: There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer 10 includes a substrate 27 which is made of AlN and has a main surface 27a along the c-axis of the AlN crystal, a first AlX1InY1Ga1-X1-Y1N layer 13 which is made of a group III nitride-based semiconductor containing Al and is provided on the main surface 27a, and a second AlX2InY2Ga1-X2-Y2N layer 15 which is provided on the main surface 27a, is made of a group III nitride-based semiconductor having a larger bandgap than the first AlX1InY1Ga1-X1-Y1N layer 13, and forms a heterojunction with the first AlX1InY1Ga1-X1-Y1N layer 13.

Abstract: Full-mesh WDM transmission units, each of which includes n number of interfaces and is capable of establishing a bidirectional full-mesh communication between all of the interfaces using wavelength paths based on a wavelength division multiplexing technique, are connected in a multistage tree-shaped structure by internetwork connection units through edge-packet transfer units connected to the respective interfaces. Therefore, it is possible to hold a direct communication between user terminals connected to the edge-packet transfer units of the same full-mesh WDM transmission unit, and to realize scalability by a multistage connection configuration.

Abstract: A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0<X?1), a first AlGaN layer made of group III nitride-based semiconductor containing Al and disposed on the substrate, and a second AlGaN layer made of group III nitride-based semiconductor having a bandgap greater than the first AlGaN layer and disposed thereon. The full width at half maximum values of X-ray rocking curves for (0002) and (10-12) planes of the first AlGaN layer are less than 1000 areseconds.