Patents by Inventor Shin Hashimoto

Shin Hashimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7582394
    Abstract: A photomask includes, on a translucent substrate, three or more first light-shielding portions each in insular shape having a property of shielding exposure light and spaced equidistantly, a second light-shielding portion having a property of shielding the exposure light and formed to connect the adjacent first light-shielding portions, and first light-transmitting portions each in slit shape having a property of transmitting the exposure light and formed to be surrounded with the first and second light-shielding portions. The second light-shielding portion is formed to contain a point located equidistantly from the three or more first light-shielding portions.
    Type: Grant
    Filed: October 5, 2004
    Date of Patent: September 1, 2009
    Assignee: Panasonic Corporation
    Inventors: Kenji Noda, Shin Hashimoto
  • Publication number: 20090194796
    Abstract: Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film (65) is provided on a gallium nitride substrate (63). A layer region (67) is provided in the gallium nitride substrate (63) and the gallium nitride epitaxial film (65). An interface between the gallium nitride substrate (43) and the gallium nitride epitaxial film (65) is positioned in the layer region (67). In the layer region (67), a peak value of donor impurity along an axis from the gallium nitride substrate (63) to the gallium nitride epitaxial film (65) is 1×1018 cm?3 or more. The donor impurity is at least either silicon or germanium.
    Type: Application
    Filed: March 1, 2006
    Publication date: August 6, 2009
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shin Hashimoto, Makoto Kiyama, Tatsuya Tanabe, Kouhei Miura, Takashi Sakurada
  • Publication number: 20090194847
    Abstract: An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm?2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
    Type: Application
    Filed: October 16, 2006
    Publication date: August 6, 2009
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Shinsuke Fujiwara, Tomoki Uemura, Takuji Okahisa, Koji Uematsu, Manabu Okui, Muneyuki Nishioka, Shin Hashimoto
  • Publication number: 20090189190
    Abstract: Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor 11 is provided with a supporting substrate 13 composed of gallium nitride, a buffer layer 15 composed of a first gallium nitride semiconductor, a channel layer 17 composed of a second gallium nitride semiconductor, a semiconductor layer 19 composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode 21, a source electrode 23 and a drain electrode 25) for the transistor 11. The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm?3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm?3.
    Type: Application
    Filed: March 3, 2006
    Publication date: July 30, 2009
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shin Hashimoto, Makoto Kiyama, Takashi Sakurada, Tatsuya Tanabe, Kouhei Miura, Tomihito Miyazaki
  • Publication number: 20090147793
    Abstract: A packet communication network is connected between a first external network and a second external network. The packet communication network includes a classifier, a parallel network that includes a plurality of physically or logically independent networks, and a multiplexing router. The classifier classifies a packet input from the first external network to one of the networks in the parallel network. Each of the networks in the parallel network transmits the packet to the multiplexing router. The multiplexing router multiplexes a packet received from the networks in the parallel network and outputs the multiplexed packet to the second external network.
    Type: Application
    Filed: October 25, 2005
    Publication date: June 11, 2009
    Applicant: NIPPON TELEGRAPH AND TELEPHONE CORP.
    Inventors: Kazuhiro Hayakawa, Satoru Yoshida, Makoto Fukuda, Nobuo Shigeta, Kazuhiko Ogawa, Shin Hashimoto
  • Patent number: 7538005
    Abstract: A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
    Type: Grant
    Filed: March 6, 2007
    Date of Patent: May 26, 2009
    Assignee: Panasonic Corporation
    Inventors: Kyoko Egashira, Shin Hashimoto
  • Publication number: 20090051007
    Abstract: A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
    Type: Application
    Filed: August 4, 2008
    Publication date: February 26, 2009
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kyoko Egashira, Shin Hashimoto
  • Publication number: 20080284026
    Abstract: A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate.
    Type: Application
    Filed: November 14, 2007
    Publication date: November 20, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Shin Hashimoto, Tadaaki Mimura
  • Patent number: 7331844
    Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: February 19, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Tanoue, Yoshiharu Hidaka, Shin Hashimoto
  • Patent number: 7312530
    Abstract: A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: December 25, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shin Hashimoto, Tadaaki Mimura
  • Publication number: 20070242684
    Abstract: Full-mesh WDM transmission units, each of which includes n number of interfaces and is capable of establishing a bidirectional full-mesh communication between all of the interfaces using wavelength paths based on a wavelength division multiplexing technique, are connected in a multistage tree-shaped structure by internetwork connection units through edge-packet transfer units connected to the respective interfaces. Therefore, it is possible to hold a direct communication between user terminals connected to the edge-packet transfer units of the same full-mesh WDM transmission unit, and to realize scalability by a multistage connection configuration.
    Type: Application
    Filed: October 25, 2005
    Publication date: October 18, 2007
    Applicant: NIPPON TELEGRAPH AND TEPLEPHONE CORP.
    Inventors: Kazuhiro Hayakawa, Satoru Yoshida, Makoto Fukuda, Nobuo Shigeta, Kazuhiko Ogawa, Shin Hashimoto
  • Patent number: 7249995
    Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.
    Type: Grant
    Filed: June 14, 2004
    Date of Patent: July 31, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Tanoue, Yoshiharu Hidaka, Shin Hashimoto
  • Publication number: 20070155147
    Abstract: A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
    Type: Application
    Filed: March 6, 2007
    Publication date: July 5, 2007
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kyoko Egashira, Shin Hashimoto
  • Patent number: 7190045
    Abstract: A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: March 13, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kyoko Egashira, Shin Hashimoto
  • Patent number: 7166018
    Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.
    Type: Grant
    Filed: December 18, 2003
    Date of Patent: January 23, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Tanoue, Yoshiharu Hidaka, Shin Hashimoto
  • Publication number: 20060199480
    Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.
    Type: Application
    Filed: April 19, 2006
    Publication date: September 7, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Tanoue, Yoshiharu Hidaka, Shin Hashimoto
  • Patent number: 7052377
    Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.
    Type: Grant
    Filed: June 14, 2004
    Date of Patent: May 30, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Tanoue, Yoshiharu Hidaka, Shin Hashimoto
  • Patent number: 7037371
    Abstract: After distributing a nonmetal element in a region in the vicinity of a surface portion of a semiconductor layer, a metal film is deposited on the semiconductor layer. Next, a semiconductor-metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on the metal film.
    Type: Grant
    Filed: October 3, 2000
    Date of Patent: May 2, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shin Hashimoto, Takenobu Kishida, Kyoko Egashira, Yoshifumi Hata, Toru Nishiwaki, Tomoya Tanaka
  • Patent number: 6995415
    Abstract: A memory cell transistor and a planar capacitor are provided in a memory region, and both transistors of a CMOS device are provided in a logic circuit region. A capacitance dielectric 15 and a plate electrode 16b of the planar capacitor are provided over a trench shared with a shallow trench isolation 12a, and the upper part of the trench is filled with the capacitance dielectric 15 and the plate electrode 16b. An n-type diffusion layer 19 that is a storage node is formed, with an end region thereof extending along one side of the upper part of the trench, to a region of the substrate overlapping with the shallow trench isolation 12a. The area of a part of the substrate functioning as a capacitor can be increased without increasing the substrate area.
    Type: Grant
    Filed: February 14, 2003
    Date of Patent: February 7, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hisashi Ogawa, Hiroaki Nakaoka, Atsuhiro Kajiya, Shin Hashimoto, Kyoko Egashira
  • Publication number: 20050074682
    Abstract: A photomask includes, on a translucent substrate, three or more first light-shielding portions each in insular shape having a property of shielding exposure light and spaced equidistantly, a second light-shielding portion having a property of shielding the exposure light and formed to connect the adjacent first light-shielding portions, and first light-transmitting portions each in slit shape having a property of transmitting the exposure light and formed to be surrounded with the first and second light-shielding portions. The second light-shielding portion is formed to contain a point located equidistantly from the three or more first light-shielding portions.
    Type: Application
    Filed: October 5, 2004
    Publication date: April 7, 2005
    Inventors: Kenji Noda, Shin Hashimoto