Abstract: The present disclosure provides a method for preparing a semiconductor structure. The method includes the following steps. A mask stack including a first mask and a second mask is formed on a substrate. Core patterns are formed over the mask stack. Spacers are formed over sidewalls of each core pattern. A patterned layer, including first openings, is formed over the core patterns and the spacers. Portions of the core patterns, the spacers and the second mask exposed through the first openings are removed to form second openings for accommodating self-aligned protecting structures. The core patterns are removed to form third masks. Portions of the second mask exposed through the third masks and the self-aligned protecting structures are removed to form third openings. Portions of the first mask exposed through the third openings are removed to form a hybrid hard mask. The substrate is then etched through the hybrid hard mask.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. A first device structure layer is between a first substrate and a second substrate. A second device structure layer is between the second substrate and the first device structure layer. A first dielectric layer is between the first and second device structure layers. A second dielectric layer is on the second substrate. A through-silicon via (TSV) structure is in the second dielectric layer, the second substrate, the second device structure layer and the first dielectric layer. A connection pad is at the surface of the second dielectric layer and connected to the TSV structure. A first liner is between the TSV structure and the second dielectric layer, the second substrate and the second device structure layer. A second liner is between the top of the TSV structure and the second dielectric layer and a part of the second substrate.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device includes a substrate, a conductive feature, a redistribution layer, at least one through silicon via and at least one bump. The conductive feature is disposed over a front surface of the substrate, and the redistribution layer is disposed over a back surface opposite to the front surface. The through silicon via penetrates through the substrate and contacts the conductive feature embedded in an insulative layer. The bump contacts the redistribution layer and the through silicon via and serves as an electrical connection therebetween.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, and a first connecting structure including a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. A top surface of the first connecting insulating layer, top surfaces of the plurality of first connecting contacts, and top surfaces of the plurality of first supporting contacts are substantially coplanar. Bottom surfaces of the plurality of first connecting contacts contact a top surface of the first semiconductor structure.

Abstract: A semiconductor device includes a conductive pattern formed over a semiconductor substrate, and an interconnect structure formed over the conductive pattern. The semiconductor device also includes a first passivation layer over the conductive pattern; a second passivation layer over the first passivation layer; an interconnect structure disposed over the conductive pattern and in the first passivation layer and the second passivation layer; and an interconnect liner disposed between the interconnect structure and the conductive pattern and surrounding the interconnect structure, wherein inner sidewall surfaces of the interconnect liner are in direct contact with the interconnect structure, and a maximum distance between outer sidewall surfaces of the interconnect liner is greater than a width of the conductive pattern.

Abstract: The present disclosure provides a semiconductor package. The semiconductor package includes a first die, a second die, a plurality of conductive plugs and a redistribution layer. The redistribution layer includes a first segment and a second segment electrically isolated from the first segment. The first segment of the redistribution layer electrically connects the first die to the second die, and the second segment of the redistribution layer electrically connects the first die to the conductive plugs.

Abstract: The present disclosure provides a semiconductor assembly. The semiconductor assembly includes a first device, a second device, and an interconnect structure configured to electrically coupled the first device and the second device. The second device is stacked on the first device. The interconnect structure includes a first leg, a second leg, and a cross member connecting the first leg to the second leg, wherein the first leg penetrates through the cap dielectric layer and the second device and contacts a first conductive feature of the first device, and a second leg penetrates through the cap dielectric layer and contacts a second conductive feature of the second device.

Abstract: The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor device structure includes: a first conductive structure and a second conductive structure disposed at different vertical heights over a semiconductor substrate; a first conductive plug and a second conductive plug correspondingly disposed over the first conductive structure and the second conductive structure; a first spacer disposed on a sidewall surface of the first conductive plug; an etch stop layer disposed over the semiconductor substrate, wherein the etch stop layer adjoins the first spacer; and a first inter-layer dielectric (ILD) layer disposed over the etch stop layer and next to the first conductive plug, wherein the first ILD layer is separated from the first spacer by an air gap.

Abstract: A method of manufacturing a semiconductor structure includes providing a substrate and a photoresist over the substrate; placing a mask over the photoresist; exposing the photoresist to a predetermined electromagnetic radiation through the mask; and removing at least a portion of the photoresist exposed to the predetermined electromagnetic radiation. The mask includes a first portion configured to totally allow the predetermined electromagnetic radiation passing through, a second portion configured to partially allow the predetermined electromagnetic radiation passing through, and a third portion configured to block the predetermined electromagnetic radiation, the second portion is disposed between the first portion and the third portion.

Abstract: The present disclosure provides a semiconductor assembly. The semiconductor assembly includes a first device, a second device, and an interconnect structure configured to electrically coupled the first device and the second device. The second device is stacked on the first device. The interconnect structure includes a first leg, a second leg, and a cross member connecting the first leg to the second leg, wherein the first leg penetrates through the cap dielectric layer and the second device and contacts a first conductive feature of the first device, and a second leg penetrates through the cap dielectric layer and contacts a second conductive feature of the second device.

Abstract: The present disclosure provides a semiconductor structure having an organic dielectric layer disposed under a bump pad and configured for stress relief, and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a first dielectric layer disposed on the first surface of the substrate; a second dielectric layer disposed on the second surface of the substrate; a conductive via extending through the substrate and partially through the first dielectric layer and the second dielectric layer; a third dielectric layer disposed within the second dielectric layer and surrounding a portion of the conductive via; and a bump pad disposed over the third dielectric layer and the conductive via, wherein a dielectric constant of the third dielectric layer is substantially different from a dielectric constant of the second dielectric layer.

Abstract: The present disclosure relates to a semiconductor device structure with fine patterns and a method for preparing the semiconductor device structure for preventing the collapse of the fine patterns. The semiconductor device structure includes a first inner spacer element disposed over a top surface of a semiconductor substrate. The first inner spacer element includes a first portion, a second portion, and a third portion between the first portion and the second portion. A height of the first portion and a height of the second portion are less than a height of the third portion, and a width of the first portion increases continuously as the first portion extends toward the top surface of the semiconductor substrate. The semiconductor device structure also includes a first outer spacer element disposed over the second portion of the first inner spacer element.

Abstract: A connector structure and a manufacturing method thereof are provided. The connector structure includes a semiconductor substrate, a metal layer, a passivation layer, and a conductive structure. The metal layer is over the semiconductor substrate. The passivation layer is over the metal layer and includes an opening. The conductive structure is in contact with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer.

Abstract: A semiconductor device includes a conductive pattern disposed over a semiconductor substrate, and an interconnect structure disposed over the conductive pattern. The semiconductor device also includes an interconnect liner formed between the interconnect structure and the conductive pattern and surrounding the interconnect structure. The inner sidewall surfaces of the interconnect liner are in direct contact with the interconnect structure, and a maximum distance between outer sidewall surfaces of the interconnect liner is greater than a width of the conductive pattern. The semiconductor device further includes a semiconductor die bonded to the semiconductor substrate. The semiconductor die includes a conductive pad facing the interconnect structure, wherein the conductive pad is electrically connected to the conductive pattern.

Abstract: A method of forming a three dimensional semiconductor structure includes: forming a through dielectric via extending on a first surface of a first interlayer dielectric layer of a first device; bonding the first device and a second device by the first surface and a second surface of the second device such that a through silicon contact pad on the second surface covers the through dielectric via; performing an etching process on a back side of a first substrate of the first device opposite to the first interlayer dielectric layer to simultaneously form a first via hole and a second via hole and exposing the second via hole through the through silicon contact pad; and forming a first via plug to fill the first via hole, and a second via plug to fill the second via hole and the through dielectric via.

Abstract: The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor device structure includes a conductive structure disposed over a semiconductor substrate, and a conductive plug disposed over the conductive structure. The conductive plug is electrically connected to the conductive structure. The semiconductor device structure also includes a first spacer formed on a sidewall surface of the conductive plug, and an etch stop layer disposed over the semiconductor substrate. The etch stop layer adjoins the first spacer. The semiconductor device further includes a first inter-layer dielectric (ILD) layer disposed over the etch stop layer and next to the conductive plug, wherein the first ILD layer is separated from the first spacer by an air gap.

Abstract: A semiconductor device includes an interposer having a first side and a second side opposite to the first side, at least one active chip mounted on the first side within a chip mounting area through a plurality of first bumps, at least one dummy chip mounted on the first side within a peripheral area being adjacent to the chip mounting area, a molding compound disposed on the first side. The molding compound covers the at least one active chip and the at least one dummy chip. A plurality of solder bumps is mounted on the second side.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including a center area and a peripheral area surrounding the center area, a first gate stack positioned on the peripheral area of the substrate, and an active column positioned in the center area of the substrate. A top surface of the first gate stack and a top surface of the active column are at a same vertical level.

Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface and a back surface, at least one semiconductor device, a first TSV disposed in the substrate, an insulating layer surrounding the first TSV, a shielding layer surrounding the insulating layer, and a second TSV adjacent to the first TSV. The semiconductor device is disposed in a device region of the substrate. The first TSV is exposed by the front surface and the back surface of the substrate. The insulating layer includes an electrically insulating material. The shielding layer includes an electrically conductive material coupled to ground through a ground layer. The second TSV is exposed by the front surface and the back surface of the substrate.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor structure. The method of manufacturing a semiconductor structure includes providing a carrier; disposing a dielectric layer over the carrier; removing a first portion of the dielectric layer to form an opening extending through the dielectric layer; removing a second portion of the dielectric layer to form a trench extending through and along the dielectric layer; disposing a conductive material into the opening and the trench to form a conductive via and a metallic strip, respectively; removing a third portion of the dielectric layer; detaching the dielectric layer from the carrier; disposing the dielectric layer over a substrate; disposing a die over the substrate; and forming a molding to surround the die.