Patents by Inventor Shinichi Kurita
Shinichi Kurita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200063620Abstract: An air cleaner includes: an air cleaner box defining a clean chamber that is placed rearward of a dirty chamber, the clean chamber receiving air which has been introduced from front into the dirty chamber and then filtered through an air cleaner element; and funnels that are to be connected to an intake port of an internal combustion engine, the funnels protruding upward into a space within the air cleaner box from a bottom wall of the air cleaner box. The air cleaner further includes a breather chamber into which blow-by gas is introduced from the internal combustion engine, the breather chamber being placed rearward of the funnels and between the funnels and a rear wall of the air cleaner box. Accordingly, the air cleaner can further promote the air-liquid separation of blow-by gas without incurring an increase in weight of the internal combustion engine.Type: ApplicationFiled: July 19, 2019Publication date: February 27, 2020Applicant: HONDA MOTOR CO., LTD.Inventors: Masahiro Kontani, Takeji Kawazumi, Toshiaki Deguchi, Shinichi Kurita, Kensuke Mori
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Publication number: 20200063654Abstract: An engine includes: a cylinder head that forms an intake port connected to a combustion chamber; a throttle body that is joined to the intake port and adjusts a degree of an opening of an intake passage by rotating a throttle vale around a rotation axis of a valve shaft, the throttle vale being fixed to the valve shaft; and a case that stores a drive member and supports a drive motor, the drive member being fixed to the valve shaft, the drive motor generating a drive force that is transmitted to the drive member. The case overlaps with the intake port as seen in a side view. Accordingly, in the engine, it is possible to reduce the volume of the intake passage between the throttle valve and the combustion chamber.Type: ApplicationFiled: July 19, 2019Publication date: February 27, 2020Applicant: HONDA MOTOR CO., LTD.Inventors: Masahiro KONTANI, Kensuke MORI, Toshiaki DEGUCHI, Shinichi KURITA
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Publication number: 20200017971Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.Type: ApplicationFiled: July 11, 2018Publication date: January 16, 2020Inventors: Chien-Teh KAO, Jeffrey A. KHO, Xiangxin RUI, Jianhua ZHOU, Shinichi KURITA, Shouqian SHAO, Guangwei SUN
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Patent number: 10487401Abstract: A PECVD chamber is disclosed with a temperature controlled gas distribution showerhead. The gas distribution showerhead is temperature controlled heated by circulating a g fluid through conduit formed within or coupled to the gas distribution showerhead. The PECVD chamber comprises a gas distribution showerhead, a backing plate coupled to the gas distribution showerhead, the backing plate having a bottom surface facing and substantially parallel with and spaced from an upper surface of the gas distribution showerhead; and a temperature controlling device coupled to the gas distribution showerhead and disposed between the backing plate and the gas distribution showerhead.Type: GrantFiled: September 27, 2016Date of Patent: November 26, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Shinichi Kurita, Robin L. Tiner
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Patent number: 10453718Abstract: Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.Type: GrantFiled: September 24, 2013Date of Patent: October 22, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Mehran Behdjat, Shinichi Kurita, John M. White, Suhail Anwar, Makoto Inagawa
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Patent number: 10373809Abstract: Implementations described herein generally relate to components and methods used in plasma processing, and more specifically relate to grooved surfaces for controlling RF return path lengths in plasma processing chambers and methods for forming the same. In one implementation, a backing plate for a plasma processing chamber is provided. The backing plate comprises a rectangular body. The rectangular body has a front surface, a back surface opposing the front surface, a first axis perpendicular to a center of the rectangular body and a plurality of grooves formed in the front surface. At least one groove of the plurality of grooves has a first length across the groove in a first location and a second length across the groove in a second location.Type: GrantFiled: September 23, 2016Date of Patent: August 6, 2019Assignee: APPLIED MATERIALS INC.Inventors: Shinichi Kurita, Robin L. Tiner
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Publication number: 20190193233Abstract: Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.Type: ApplicationFiled: December 22, 2017Publication date: June 27, 2019Inventors: Ilyoung HONG, Lai ZHAO, Jianhua ZHOU, Robin L. TINER, Gaku FURUTA, Shinichi KURITA, Soo Young CHOI
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Patent number: 10312058Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.Type: GrantFiled: September 28, 2017Date of Patent: June 4, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Soo Young Choi, John M. White, Qunhua Wang, Li Hou, Ki Woon Kim, Shinichi Kurita, Tae Kyung Won, Suhail Anwar, Beom Soo Park, Robin L. Tiner
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Patent number: 10304761Abstract: Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.Type: GrantFiled: November 17, 2016Date of Patent: May 28, 2019Assignee: Hitachi Power Semiconductor Device, Ltd.Inventors: Kenya Kawano, Tetsuya Ishimaru, Shinichi Kurita, Takeshi Terakawa
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Publication number: 20190148416Abstract: Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.Type: ApplicationFiled: February 5, 2018Publication date: May 16, 2019Inventors: Xiangxin RUI, Soo Young CHOI, Shinichi KURITA, Yujia ZHAI, Lai ZHAO
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Patent number: 10280510Abstract: The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.Type: GrantFiled: March 28, 2016Date of Patent: May 7, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Shinichi Kurita, Robin L. Tiner
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Patent number: 10265868Abstract: Embodiments of the present invention provide a transfer robot having a cooling plate attached thereto for cooling a substrate during transfer between a processing chamber and a load lock chamber. In one embodiment, the cooling plate is a single, large area cooling plate attached to the transfer robot beneath the substrate being transferred. In another embodiment, the cooling plate is an array of substrates attached to the transfer robot beneath the substrate being transferred. The cooling plate may include a conduit path for circulating a cooling fluid throughout the cooling plate. The cooling plate may have an upper surface with a high emissivity coating applied thereto.Type: GrantFiled: January 14, 2011Date of Patent: April 23, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Shinichi Kurita, Makoto Inagawa, Takayuki Matsumoto
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Patent number: 10262837Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.Type: GrantFiled: November 4, 2015Date of Patent: April 16, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Soo Young Choi, John M. White, Qunhua Wang, Li Hou, Ki Woon Kim, Shinichi Kurita, Tae Kyung Won, Suhail Anwar, Beom Soo Park, Robin L. Tiner
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Patent number: 10205314Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.Type: GrantFiled: November 21, 2017Date of Patent: February 12, 2019Assignee: Hitachi Power Semiconductor Device, Ltd.Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita
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Publication number: 20190043984Abstract: A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.Type: ApplicationFiled: August 6, 2018Publication date: February 7, 2019Applicant: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.Inventors: Masaki SHIRAISHI, Tetsuya ISHIMARU, Junichi SAKANO, Mutsuhiro MORI, Shinichi KURITA
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Patent number: 10184179Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) processing chamber for device fabrication and methods for replacing a gas distribution plate and mask of the same. The ALD processing chamber has a slit valve configured to allow removal and replacement of a gas distribution plate and mask. The ALD processing chamber may also have actuators operable to move the gas distribution plate to and from a process position and a substrate support assembly operable to move the mask to and from a process position.Type: GrantFiled: January 20, 2015Date of Patent: January 22, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Shinichi Kurita, Jozef Kudela, John M. White, Dieter Haas
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Patent number: 10123379Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support has a rectangular body. The rectangular body has a first quadrant, a second quadrant, a third quadrant and a fourth quadrant. A first heating element is disposed in the first quadrant and extending from a center area of the rectangular body. The first heating element has a first segment having a first length and extending from the center area, a second segment having a second length, the second segment extending from the first segment and coupled thereto, a third segment having a third length extending from the second segment and coupled thereto, and a fourth segment having a fourth length coupled to and extending from the third segment to the center area. A second heating element is enclosed by the first heating element and the center area.Type: GrantFiled: April 25, 2017Date of Patent: November 6, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Robin L. Tiner, Soo Young Choi, Beom Soo Park, Shinichi Kurita, Bora Oh, Gaku Furuta
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Patent number: 10079536Abstract: The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.Type: GrantFiled: October 19, 2016Date of Patent: September 18, 2018Assignee: Hitachi Power Semiconductor Device, Ltd.Inventors: Tetsuya Ishimaru, Shinichi Kurita, Takeshi Terakawa
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Patent number: 10069436Abstract: A rectifier (107) includes a rectifying MOSFET (101) that performs synchronous rectification, a control circuit (106) that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET (101) to determine an ON or OFF state of the rectifying MOSFET (101) based on the inputted voltage, and a capacitor (104) that supplies power to the control circuit (106). The control circuit (106) includes a blocking circuit (105) that inputs the voltage across the pair of main terminals of the rectifying MOSFET (101), to block power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is lower than the first voltage.Type: GrantFiled: September 30, 2015Date of Patent: September 4, 2018Assignee: Hitachi Power Semiconductor Device, Ltd.Inventors: Tetsuya Ishimaru, Kohhei Onda, Shinichi Kurita, Shigeru Sugayama
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Publication number: 20180191152Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.Type: ApplicationFiled: November 21, 2017Publication date: July 5, 2018Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita