Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.

Abstract: Embodiments described herein relate to a thermal chamber utilized in the processing of display substrates. The thermal chamber may be part of a larger processing system configured to manufacture OLED devices. The thermal chamber may be configured to heat and cool masks and/or substrates utilized in deposition processes in the processing system. The thermal chamber may include a chamber body defining a volume sized to receive one or more cassettes containing a plurality of masks and/or substrates. Heaters coupled to the chamber body within the volume may be configured to controllably heat masks and/or substrates prior to deposition processes and cool the masks and/or substrates after deposition processes.

Abstract: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

Abstract: Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

Abstract: A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.

Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.

Abstract: Embodiments described herein generally relate to a substrate support assembly. The substrate support assembly includes a support plate and a ceramic layer. The support plate has a top surface. The top surface includes a substrate receiving area configured to support a large area substrate and an outer area located outward of the substrate receiving area.

Abstract: The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.

Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.

Abstract: Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support has a rectangular body. The rectangular body has a first quadrant, a second quadrant, a third quadrant and a fourth quadrant. A first heating element is disposed in the first quadrant and extending from a center area of the rectangular body. The first heating element has a first segment having a first length and extending from the center area, a second segment having a second length, the second segment extending from the first segment and coupled thereto, a third segment having a third length extending from the second segment and coupled thereto, and a fourth segment having a fourth length coupled to and extending from the third segment to the center area. A second heating element is enclosed by the first heating element and the center area.

Abstract: A method and apparatus for a transfer robot that having at least one image sensor disposed thereon is provided. The transfer robot includes a lift assembly having a first drive assembly for moving a first platform relative to a second platform in a first linear direction, an end effector assembly disposed on the second platform and movable in a second linear direction by a second drive assembly, the second linear direction being orthogonal to the first linear direction, at least one image sensor, and a lighting device associated with the at least one image sensor.

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions and a center region, and plurality of gas passages comprising an upstream bore and an orifice hole fluidly coupled to the upstream bore that are formed between an upstream side and a downstream side of the plate, and a plurality of grooves surrounding the gas passages, wherein a depth of the grooves varies from the edge regions to the center region of the plate.

Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support is divided into quadrants with each quadrant capable of heating independent of the other quadrants. The independent heating permits the substrate support to provide different heating to either different substrate simultaneously disposed on the substrate support or to different areas of a common substrate. Thus, the substrate heating may be tailored to ensure desired processing of the substrate or substrates occurs.

Abstract: Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.

Abstract: The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.

Abstract: A PECVD chamber is disclosed with a temperature controlled gas distribution showerhead. The gas distribution showerhead is temperature controlled heated by circulating a g fluid through conduit formed within or coupled to the gas distribution showerhead. The PECVD chamber comprises a gas distribution showerhead, a backing plate coupled to the gas distribution showerhead, the backing plate having a bottom surface facing and substantially parallel with and spaced from an upper surface of the gas distribution showerhead; and a temperature controlling device coupled to the gas distribution showerhead and disposed between the backing plate and the gas distribution showerhead.

Abstract: Implementations described herein generally relate to components and methods used in plasma processing, and more specifically relate to grooved surfaces for controlling RF return path lengths in plasma processing chambers and methods for forming the same. In one implementation, a backing plate for a plasma processing chamber is provided. The backing plate comprises a rectangular body. The rectangular body has a front surface, a back surface opposing the front surface, a first axis perpendicular to a center of the rectangular body and a plurality of grooves formed in the front surface. At least one groove of the plurality of grooves has a first length across the groove in a first location and a second length across the groove in a second location.