Abstract: A process chamber for processing a plurality of substrates is provided. The process chamber includes a chamber body having a single substrate transfer opening, a first substrate support mesa disposed in the chamber body, and a second substrate support mesa disposed in the chamber body. Each substrate support mesa is configured to support a substrate during processing. The centers of the first substrate support mesa, the second substrate support mesa, and the opening are linearly aligned.

Abstract: The embodiments described herein generally relate to a frame for use in a plasma processing chamber to provide non-uniform gas flow flowing between the frame and sidewalls of the plasma processing chamber. In one embodiment, a frame includes a frame body having an inner wall and an outer wall defining a frame body, a center opening formed in the frame defined by the inner wall, and a corner region and a center region formed in a first side of the frame body. The corner region having a corner width that is smaller than a center width of the center region, wherein the widths are defined between the inner and outer walls.

Abstract: An apparatus is provided that includes a chamber wall section prone to deflection, a stationary section providing a sealing surface, and a flexible bellows attached to the chamber wall section and the stationary section. A system is also provided that includes a chamber including a chamber wall having an opening, a door disposed to seal the opening, a sealing surface adjacent the opening and isolated from the chamber wall, and a seal between the sealing surface and the chamber wall. Numerous other aspects are provided.

Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) processing chamber for device fabrication and methods for replacing a gas distribution plate and mask of the same. The ALD processing chamber has a slit valve configured to allow removal and replacement of a gas distribution plate and mask. The ALD processing chamber may also have actuators operable to move the gas distribution plate to and from a process position and a substrate support assembly operable to move the mask to and from a process position.

Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). A process kit for TFE is provided. The process kit is an assembly including a window, a mask parallel to the window, and a frame. The process kit further includes an inlet channel for flowing process gases into the volume between the window and the mask, an outlet channel for pumping effluent gases away from the volume between the window and the mask, and seals for inhibiting the flow of process gases and effluent gases to undesired locations. A method of performing TFE is provided, including placing a substrate under the mask of the above described process kit, flowing process gases into the process kit, and activating some of the process gases into reactive species by means of an energy source within a processing chamber.

Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

Abstract: A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.

Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

Abstract: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

Abstract: A bellows which forms a flexible coupling between the lid of a processing chamber and an antenna feed through. One embodiment provides an apparatus comprising a chamber body having a chamber lid, a feed through extending through the chamber lid, an antenna coupled to and extending through the feed through to an internal volume of the chamber body, and a bellows comprising a first flange, the first flange coupled to the feed through, a second flange, the second flange coupled to the chamber lid, and a center portion extending between the first flange and the second flange.

Abstract: A rectifier 107 includes a rectifying MOSFET 101 that performs synchronous rectification, a control circuit 106 that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET 101 to determine an ON or OFF state of the rectifying MOSFET 101 based on the inputted voltage, and a capacitor 104 that supplies power to the control circuit 106. The control circuit 106 includes a blocking circuit 105 that inputs the voltage across the pair of main terminals of the rectifying MOSFET 101, to block power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit 106 when the inputted voltage across the pair of main terminals is lower than the first voltage.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: Embodiments of the present disclosure provide an apparatus having a remote plasma clean source in which the remote plasma clean source delivers radicals from the remotely generated plasma to the chamber at a location disposed between a backing plate and a diffuser.

Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.

Abstract: The present invention generally provides a load lock chamber having slit valve doors. The load lock chamber is used to connect a transfer chamber to a factory interface, or to connect two transfer chambers. When the load lock chamber is between adjacent transfer chambers, the load lock chamber has slit valve doors within the load lock chamber which seal against an inside surface of the load lock chamber. The load lock can thus be serviced at atmospheric pressure without breaking vacuum in the transfer chambers because the atmospheric pressure presses the doors against the inside surface. When the load lock chamber is between a transfer chamber and a factory interface, one slit valve door is disposed outside of the load lock chamber and seals against an outside surface of the load lock chamber. The atmospheric pressure from the factory interface side helps press the door against the outside surface.

Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.

Abstract: A system and method for encapsulating an organic light-emitting diode (OLED) device by enabling a substrate and a plurality of masks to be efficiently received into a vacuum processing environment, transferred between one or more process chambers for the deposition of encapsulating layers, and removed from the processing system. A method of encapsulating an organic light-emitting diode (OLED) device includes positioning one or more masks over a substrate to deposit encapsulating layers on an OLED device disposed on the substrate. A processing system for encapsulating an organic light-emitting diode (OLED) device includes one or more transfer chambers, one or more load lock chambers coupled to each transfer chamber and operable to receive a mask into a vacuum environment, and one or more process chambers coupled to each transfer chamber and operable to deposit an encapsulating layer on a substrate.

Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support is divided into quadrants with each quadrant capable of heating independent of the other quadrants. The independent heating permits the substrate support to provide different heating to either different substrate simultaneously disposed on the substrate support or to different areas of a common substrate. Thus, the substrate heating may be tailored to ensure desired processing of the substrate or substrates occurs.