Abstract: A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface.

Abstract: A control apparatus for an internal combustion engine includes a fuel tank; a vaporized fuel tank that is connected to an intake passage; an in-tank fuel supplying portion that supplies fuel in the fuel tank to the vaporized fuel tank; a vaporized fuel supply valve that opens and closes a connecting portion between the vaporized fuel tank and the intake passage; an air introduction valve provided in the vaporized fuel tank; a throttle valve; a vaporized fuel producing portion that produces vaporized fuel in the vaporized fuel tank; a vaporized fuel supplying portion that supplies vaporized fuel stored in the vaporized fuel tank; and a supply amount controlling portion that controls a supply amount of vaporized fuel according to an opening amount of the throttle valve by driving the throttle valve when supplying vaporized fuel.

Abstract: An internal combustion engine exhaust cooling system includes an exhaust gas cooling adapter that is arranged between an exhaust port that opens in a cylinder head, and an exhaust branch pipe, and cools exhaust gas that flows through an exhaust passage by running coolant through a coolant passage formed inside of a wall that surrounds the exhaust passage. The coolant passage includes a first passage and a second passage being provided according to an offset of an amount of heat received from exhaust gas in a circumferential direction of an inner surface of the exhaust passage, and two middle passages that connect the first passage with the second passage at both ends of the two middle passages, and a coolant delivery direction is a direction from the second passage side of a first middle passage, of the two middle passages, toward the first passage side.

Abstract: A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.

Abstract: A deposition apparatus 100 comprises a chamber 102; a first gas supply path 140 for supplying a first deposition gas 131 including a silicon source gas to a position directly above an SiC (silicon carbide) wafer 101 placed inside the chamber 102; and a second gas supply path 141 for supplying a second deposition gas 132 including a carbon source gas into the chamber 102. The lower end of the first gas supply path 140 is directly above the wafer 101 inside the chamber 102. The second gas supply path 141 is located at an upper section of the chamber 102. A SiC (silicon carbide) film is deposited on the wafer 101 with the use of the first gas 131 and the second gas 132.

Abstract: A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.

Abstract: A working gas circulation engine includes a combustion chamber that is supplied with fuel, the combustion product of which is condensed, and working gas that generates power with the use of combustion of the fuel and that has a specific heat ratio higher than that of air, a circulation path that connects an inlet and an outlet of the combustion chamber to each other in such a manner that the working gas is circulated back to the combustion chamber without being released into the atmosphere, and two condensers that are provided in the circulation path, that are supplied with exhaust gas which contains the combustion product and the working gas, and that condense and remove the combustion product.

Abstract: A gas circulation engine includes a combustion chamber to which high-pressure fuel in a first high-pressure fuel supply passage, an oxidant and working gas are supplied; a circulation path that connects an intake-side portion and an exhaust-side portion of the combustion chamber to each other; a fuel bleed-off tank into which the high-pressure fuel in the first high-pressure fuel supply passage is bled off; a fuel bleed-off valve that permits or shuts off communication between the first high-pressure fuel supply passage and the fuel bleed-off tank; and a fuel bleed-off control unit that permits communication between the first high-pressure fuel supply passage and the fuel bleed-off tank by opening the fuel bleed-off valve when the engine is stopped, the communication between the first high-pressure fuel supply passage and the fuel bleed-off tank being shut off during operation of the engine.

Abstract: The deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; electrically-conductive busbars 123 for supporting the heater 121; electrode assemblies 107 for supporting the busbars 123 and conducting electricity to the heater 121, the electrode assemblies 107 each having a hollow rod electrode 108 with upper and lower openings; and a columnar support 105 for supporting the rod electrodes 108 of the electrode assemblies 107. Wafer heating by the heater 121 is conducted while a purge gas flows through the inside of the rod electrodes 108 from the lower openings of the rod electrodes 108, so that the electrode assemblies 107 cannot be heated to a high temperature.

Abstract: A deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; an electrically-conductive busbar 123 for supporting the heater 121; and an electrode assembly 107 having a hollow rod electrode 108 with upper and lower openings for conducting electricity to the heater 121 and a connector 124, secured to the busbar 123, for connecting the busbars 123 to the rod electrode 108. Wafer heating by the heater 121 is conducted while a purge gas 117 is fed from the lower opening of the rod electrode 108 so that the purge gas 117 can flow through the upper opening of the rod electrode 108 and through a clearance 131 that is located at the joint surface between the busbar 123 and the connector 124 and communicates with the upper opening of the rod electrode 108.

Abstract: An exhaust heat recovery apparatus includes: an exhaust heat recovery unit that produces motive power by recovering thermal energy from exhaust heat, wherein the produced motive power is combined with motive power produced by a heat engine and is output together therewith; an auxiliary that is driven by at least the exhaust heat recovery unit; and a power transmission-switching device that is provided between the heat engine and the exhaust heat recovery unit, the same power transmission-switching device being provided between the heat engine and the auxiliary, and that cuts off the connection between the heat engine and the exhaust heat recovery unit when there is no request to drive the heat engine. Thus, it becomes possible to effectively use the surplus motive power produced by the exhaust heat recovery unit when there is no request to drive the heat engine.

Abstract: A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.

Abstract: The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method. A coating apparatus 1 for performing a deposition process on substrates W placed in a coating chamber by metalorganic chemical vapor deposition includes three or more coating chambers, e.g., a first coating chamber 2, a second coating chamber 102, and a third coating chamber 202. These coating chambers are configured such that each coating chamber is controlled independently of the other coating chambers to form a different film on the substrates W by controlling at least the composition of the material gas, the flow rate of material gas, the temperature, and the pressure in the coating chamber. A cleaning unit 5 is provided outside the coating chambers 2, 102, 202 to clean the susceptor after the deposition process.

Abstract: A hydrogen engine 10 supplies hydrogen, oxygen, and an argon gas serving as a working to a combustion chamber 21 to combust the hydrogen. H2O in a recirculating gas discharged from the combustion chamber 21 is separated and eliminated from the gas by a condenser 66. A three-way valve 72 is switched over in such a manner that the recirculating gas flows through a product eliminating section 70 (a carbon dioxide absorbing unit 71), when the concentration of carbon dioxide in the recirculating gas is higher than a predetermined concentration, so that the carbon dioxide is separated and eliminated from the recirculating gas.

Abstract: An exhaust heat recovery apparatus includes: an exhaust heat recovery unit that produces motive power by recovering thermal energy from exhaust gas discharged from a heat engine; an electric generator that is driven by the exhaust heat recovery unit; a first power transmission-switching device that switches between connection and disconnection between the heat engine and the exhaust heat recovery unit; and a second power transmission-switching device that switches between connection and disconnection between the exhaust heat recovery unit and the electric generator, wherein the heat engine or the electric generator is selectively connected to the exhaust heat recovery unit, depending on the operational status of the heat engine. The exhaust heat recovery apparatus makes it possible to effectively use surplus motive power produced by an exhaust heat recovery unit.

Abstract: A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.

Abstract: A heater for heating a wafer includes elements that are arranged at a distance from one another in a rotationally symmetrical fashion with respect to a shaft extending through a center of the wafer, an electrode being provided to each of the elements to heat the wafer uniformly.

Abstract: In order to decrease internal friction of a heat engine that converts a reciprocating motion of a piston into a rotational motion, a piston apparatus (1) forms an air bearing between a crankshaft (30) and a bearing unit (9B) provided in a crankcase (9) and between an eccentric portion (30c) of the crankshaft (30) and a large end portion (201) of a connecting rod (20) by feeding a gas therebetween from a crank-side hollow portion (31) of the crankshaft (30). The piston apparatus 1 also forms an air bearing between a piston pin (40) and a small end portion (202) of the connecting rod (20) by feeding a gas therebetween from a piston pin-side hollow portion (43) in the piston pin (40).

Abstract: A piston apparatus which configures an air bearing by introducing a compressed working media into an inside of a piston, and ejecting the working media from plural holes arranged on a circumferential portion of the piston into a clearance between the piston and the cylinder, which prevents a back-flow of the working media in the piston to a working space, and which readily secures reliability and longevity is provided.

Abstract: An operating gas circulation type internal combustion engine that uses argon as the operating gas, for example, and includes a hydrogen and oxygen supply portion, an argon supply amount regulating portion, and an electric control unit. The electric control unit determines the amount of hydrogen and oxygen to be supplied to a combustion chamber based on a required torque, which is the torque required of the internal combustion engine, and supplies the determined amounts of hydrogen and oxygen to the combustion chamber using the hydrogen supply portion and the oxygen supply portion. Further, the electric control unit determines an amount of operating gas to be supplied to the combustion chamber according to the required torque, and controls the argon supply amount regulating portion such that the determined amount of operating gas is supplied to the combustion chamber.