Abstract: An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P2 region. The contact surface of the susceptor with the silicon wafer has a plurality of holes therein. The silicon wafer is attached to the susceptor by evacuating gas from the P2 region.

Abstract: An apparatus for manufacturing a semiconductor device, including in a reaction chamber: a rotor provided with a holding member holding a wafer thereon and a heater heating the wafer therein; a rotation drive mechanism; a gas supply mechanism; a gas exhaust mechanism; and a rectifying plate for rectifying the supplied process gas to supply the rectified gas, and including: an annular rectifying fin mounted on a lower portion of the plate, having a larger lower end inside diameter than an upper end inside diameter thereof and downward rectifying gas exhausted in an outer circumferential direction from above the wafer; and a distance control mechanism controlling a vertical distance between the plate and the wafer and a vertical distance between the fin and the rotor top face to be predetermined distances, respectively, thereby providing higher film formation efficiency.

Abstract: An apparatus for manufacturing an epitaxial wafer, includes: a chamber; a gas inlet provided in the chamber and introducing a reaction gas into the chamber; a gas outlet provided in the chamber and exhausting the reaction gas; a rotator unit provided inside the chamber; a wafer holder provided on an upper portion of the rotator unit and holding a wafer; an inner heater provided inside the rotator unit; and an outer heater provided between the rotator unit and an inner wall of the chamber.

Abstract: An exhaust heat recovery apparatus includes a Stirling engine and a clutch. The Stirling engine produces motive power by recovering thermal energy from exhaust gas discharged from an internal combustion engine from which exhaust heat is recovered. The motive power produced by the Stirling engine is transmitted to an internal combustion engine transmission through the clutch and an exhaust heat recovery device transmission, and combined with the motive power produced by the internal combustion engine through the internal combustion engine transmission, and is output from an output shaft. If rapid acceleration is required, and the increase in the rotation speed of the Stirling engine therefore lags behind the increase in the rotation speed of the internal combustion engine, the clutch is released. With this configuration, reduction in the power output from the heat engine, from which exhaust heat is recovered, is restricted, and the degradation of the acceleration performance is minimized.

Abstract: A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.

Abstract: An exhaust heat recovery apparatus includes a reciprocating internal combustion engine in which a piston reciprocates in a cylinder to generate motive power; and a Stirling engine that recovers the thermal energy of the exhaust gas discharged from the internal combustion engine and converts the thermal energy into kinetic energy. The Stirling engine is united with the internal combustion engine. A heater that the Stirling engine includes is disposed in an exhaust manifold of the internal combustion engine. With this configuration, it is possible to restrict reduction in the power output from the exhaust heat recovery means.

Abstract: In order to decrease internal friction of a heat engine that converts a reciprocating motion of a piston into a rotational motion, a piston apparatus (1) forms an air bearing between a crankshaft (30) and a bearing unit (9B) provided in a crankcase (9) and between an eccentric portion (30c) of the crankshaft (30) and a large end portion (201) of a connecting rod (20) by feeding a gas therebetween from a crank-side hollow portion (31) of the crankshaft (30). The piston apparatus 1 also forms an air bearing between a piston pin (40) and a small end portion (202) of the connecting rod (20) by feeding a gas therebetween from a piston pin-side hollow portion (43) in the piston pin (40).

Abstract: There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

Abstract: There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

Abstract: A heat energy recovery apparatus include a compressor which has a piston for compressing sucked-in working gas; a heat exchanger which makes the working gas compressed by the compressor absorb heat of high temperature fluid; an expander which has a piston to be moved under pressure by expansion of the heat-absorbed working gas; and an accumulator which stores the working gas compressed by the compressor when required output is low or heat receiving capacity of the working gas is small. The apparatus preferably include a blocking unit which blocks discharge of the working gas from the expander when the heat receiving capacity of the working gas is small and the compressed working gas to the accumulator is being stored.

Abstract: An operating gas circulation type internal combustion engine that uses argon as the operating gas, for example, and includes a hydrogen and oxygen supply portion, an argon supply amount regulating portion, and an electric control unit. The electric control unit determines the amount of hydrogen and oxygen to be supplied to a combustion chamber based on a required torque, which is the torque required of the internal combustion engine, and supplies the determined amounts of hydrogen and oxygen to the combustion chamber using the hydrogen supply portion and the oxygen supply portion. Further, the electric control unit determines an amount of operating gas to be supplied to the combustion chamber according to the required torque, and controls the argon supply amount regulating portion such that the determined amount of operating gas is supplied to the combustion chamber.

Abstract: A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.

Abstract: A piston apparatus which configures an air bearing by introducing a compressed working media into an inside of a piston, and ejecting the working media from plural holes arranged on a circumferential portion of the piston into a clearance between the piston and the cylinder, which prevents a back-flow of the working media in the piston to a working space, and which readily secures reliability and longevity is provided.

Abstract: A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.

Abstract: An exhaust heat energy recovery apparatus for an internal combustion engine that efficiently recovers exhaust heat energy without increasing engine exhaust back pressure, and a Brayton cycle apparatus applicable to the exhaust heat energy recovery apparatus. A Brayton cycle apparatus 1 using a scroll compressor 4 and a scroll expander 6 has a simplified and downsized structure. A working fluid is compressed inside a scroll compressor 4 and expanded inside a scroll expander 6 in spaces partitioned and sealed by combinations of fixed scrolls and orbital scrolls. The conversion efficiency from heat energy to kinetic energy is high. Heat is transferred from the exhaust to the working fluid through a pipe wall of a flow passage 30a and an expander case 12 of the scroll expander 6. This further downsizes the Brayton cycle apparatus 1. The back pressure of the energy source including the exhaust is unaffected.

Abstract: An exhaust heat recovery apparatus includes: an exhaust heat recovery unit that produces motive power by recovering thermal energy from exhaust gas discharged from a heat engine; an electric generator that is driven by the exhaust heat recovery unit; a first power transmission-switching device that switches between connection and disconnection between the heat engine and the exhaust heat recovery unit; and a second power transmission-switching device that switches between connection and disconnection between the exhaust heat recovery unit and the electric generator, wherein the heat engine or the electric generator is selectively connected to the exhaust heat recovery unit, depending on the operational status of the heat engine. The exhaust heat recovery apparatus makes it possible to effectively use surplus motive power produced by an exhaust heat recovery unit.

Abstract: An exhaust heat recovery apparatus includes: an exhaust heat recovery unit that produces motive power by recovering thermal energy from exhaust heat, wherein the produced motive power is combined with motive power produced by a heat engine and is output together therewith; an auxiliary that is driven by at least the exhaust heat recovery unit; and a power transmission-switching device that is provided between the heat engine and the exhaust heat recovery unit, the same power transmission-switching device being provided between the heat engine and the auxiliary, and that cuts off the connection between the heat engine and the exhaust heat recovery unit when there is no request to drive the heat engine. Thus, it becomes possible to effectively use the surplus motive power produced by the exhaust heat recovery unit when there is no request to drive the heat engine.

Abstract: Provided is an exhaust heat recovery apparatus that includes: an exhaust heat recovery unit that recovers thermal energy from exhaust gas discharged from a heat engine; and a power transmission-switching device that cuts off the connection between an output shaft of the heat engine and an output shaft of the exhaust heat recovery unit when the heat engine is started. With the exhaust heat recovery apparatus, the reduction in the power output from the heat engine, from which exhaust heat is recovered, is suppressed when the exhaust heat of the heat engine is recovered.

Abstract: A plurality of wafers are loaded on a susceptor installed in a reaction chamber, and the wafers are heated, and process gas is fed from a plurality of stages of openings formed in a gas feed nozzle installed so as to pass through the center of the susceptor, the process gas is fed obliquely downward from the uppermost openings, and the process gas feeding directions are changed to the reaction chamber relatively. The thickness of deposits on the wall of the reaction chamber is suppressed, the maintenance cycle of film forming equipment is extended, and the throughput can be improved.

Abstract: A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.