Patents by Inventor Shinichi Mitani

Shinichi Mitani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7134409
    Abstract: An internal combustion engine 100 comprises a variable valve mechanism 424 and a deposit removal executing section for removing deposits. The deposit removal executing section controls the variable valve mechanism 424 to increase the flow speed of intake air to internal combustion engine 100, thereby removing deposits adhering in proximity to the intake valve 422.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: November 14, 2006
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Shinichi Mitani, Toshiaki Asada
  • Publication number: 20060218919
    Abstract: A heat energy recovery apparatus includes a compressor; a heat exchanger; an expander; a working gas exhaust pipe which leads the working gas compressed by the compressor to the heat exchanger; a working gas exhaust path generally parallel to a direction of the thermal expansion of the heat exchanger; an extending unit extensible in the same direction as that of the thermal expansion when the heat exchanger expands thermally and tensile stress occurs in the working gas exhaust path with the thermal expansion of the heat exchanger; and a shrinking unit shrinkable in the same direction as that of the thermal expansion when the heat exchanger expands thermally and compressive stress occurs in the working gas exhaust path with the thermal expansion of the heat exchanger.
    Type: Application
    Filed: March 7, 2006
    Publication date: October 5, 2006
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Shinichi Mitani, Daisaku Sawada
  • Publication number: 20060218924
    Abstract: A heat energy recovery apparatus include a compressor which has a piston for compressing sucked-in working gas; a heat exchanger which makes the working gas compressed by the compressor absorb heat of high temperature fluid; an expander which has a piston to be moved under pressure by expansion of the heat-absorbed working gas; and an accumulator which stores the working gas compressed by the compressor when required output is low or heat receiving capacity of the working gas is small. The apparatus preferably include a blocking unit which blocks discharge of the working gas from the expander when the heat receiving capacity of the working gas is small and the compressed working gas to the accumulator is being stored.
    Type: Application
    Filed: March 3, 2006
    Publication date: October 5, 2006
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Shinichi Mitani
  • Patent number: 7096840
    Abstract: In a method of starting an internal combustion engine, a combustion energy is generated by combusting a fuel that has been injected into a cylinder in an expansion stroke when the internal combustion engine is stopped. In the aforementioned method, the combustion energy generated by combusting the fuel is obtained based on a state of an air/fuel mixture within the cylinder to which the fuel has been injected. Based on the obtained combustion energy, a kinetic energy to be supplied to the internal combustion engine from a primary energy supply source is estimated. A difference between a predetermined target kinetic energy required for starting the internal combustion engine subsequent to the start of combustion and the estimated kinetic energy to be supplied from the primary energy supply source is obtained. The kinetic energy corresponding to the obtained difference is supplied from a secondary energy supply source in the form of a starter motor.
    Type: Grant
    Filed: September 2, 2003
    Date of Patent: August 29, 2006
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Toshiaki Asada, Shinichi Mitani, Kimitoshi Tsuji, Yasushi Kusaka, Kenji Kataoka
  • Patent number: 7028656
    Abstract: A start control apparatus for an internal combustion engine according to the present invention is characterized by that in a port injection type internal combustion engine, fuel is supplied in the interior of a cylinder that is in its compression stroke or expansion stroke upon stoppage of the internal combustion engine, and upon the next start of the internal combustion engine, the fuel in the interior of the aforementioned cylinder is burned to rotate the engine output shaft utilizing the pressure generated when the fuel is burned. Thus, the torque required for cranking the internal combustion engine is reduced and the load applied on a starter apparatus such as a starter motor is reduced.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: April 18, 2006
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Kimitoshi Tsuji, Yasushi Kusaka, Kenji Kataoka, Toshiaki Asada, Shinichi Mitani
  • Publication number: 20050115534
    Abstract: A start control apparatus for an internal combustion engine according to the present invention is characterized by that in a port injection type internal combustion engine, fuel is supplied in the interior of a cylinder that is in its compression stroke or expansion stroke upon stoppage of the internal combustion engine, and upon the next start of the internal combustion engine, the fuel in the interior of the aforementioned cylinder is burned to rotate the engine output shaft utilizing the pressure generated when the fuel is burned. Thus, the torque required for cranking the internal combustion engine is reduced and the load applied on a starter apparatus such as a starter motor is reduced.
    Type: Application
    Filed: December 30, 2004
    Publication date: June 2, 2005
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Kimitoshi Tsuji, Yasushi Kusaka, Kenji Kataoka, Toshiaki Asada, Shinichi Mitani
  • Patent number: 6877470
    Abstract: In a starting control system for an internal combustion engine, an output shaft is rotated in a reverse direction at a predetermined direction upon start of the internal combustion engine, and then is rotated in a normal direction so as to start a cranking operation. The system serves to combust the fuel in a cylinder in an expansion stroke when the output shaft is rotated in the reverse direction, and the resultant combustion pressure is used for performing the cranking operation. This makes it possible to reduce the load exerted to the electric motor.
    Type: Grant
    Filed: September 8, 2003
    Date of Patent: April 12, 2005
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Shinichi Mitani, Toshiaki Asada, Yasushi Kusaka, Kenji Kataoka
  • Publication number: 20050028764
    Abstract: An internal combustion engine 100 comprises a variable valve mechanism 424 and a deposit removal executing section for removing deposits. The deposit removal executing section controls the variable valve mechanism 424 to increase the flow speed of intake air to internal combustion engine 100, thereby removing deposits adhering in proximity to the intake valve 422.
    Type: Application
    Filed: June 24, 2004
    Publication date: February 10, 2005
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shinichi Mitani, Toshiaki Asada
  • Publication number: 20040060530
    Abstract: In a starting control system for an internal combustion engine, an output shaft is rotated in a reverse direction at a predetermined direction upon start of the internal combustion engine, and then is rotated in a normal direction so as to start a cranking operation. The system serves to combust the fuel in a cylinder in an expansion stroke when the output shaft is rotated in the reverse direction, and the resultant combustion pressure is used for performing the cranking operation. This makes it possible to reduce the load exerted to the electric motor.
    Type: Application
    Filed: September 8, 2003
    Publication date: April 1, 2004
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Shinichi Mitani, Toshiaki Asada, Yasushi Kusaka, Kenji Kataoka
  • Publication number: 20040055553
    Abstract: In a method of starting an internal combustion engine, a combustion energy is generated by combusting a fuel that has been injected into a cylinder in an expansion stroke when the internal combustion engine is stopped. In the aforementioned method, the combustion energy generated by combusting the fuel is obtained based on a state of an air/fuel mixture within the cylinder to which the fuel has been injected. Based on the obtained combustion energy, a kinetic energy to be supplied to the internal combustion engine from a primary energy supply source is estimated. A difference between a predetermined target kinetic energy required for starting the internal combustion engine subsequent to the start of combustion and the estimated kinetic energy to be supplied from the primary energy supply source is obtained. The kinetic energy corresponding to the obtained difference is supplied from a secondary energy supply source in the form of a starter motor.
    Type: Application
    Filed: September 2, 2003
    Publication date: March 25, 2004
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Toshiaki Asaka, Shinichi Mitani, Kimitoshi Tsuji, Yasushi Kusaka, Kenji Kataoka
  • Patent number: 6537924
    Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: March 25, 2003
    Assignees: Toshiba Ceramics, Co., Ltd., Toshiba Kikai Kabushikikaisha
    Inventors: Shuji Tobashi, Tadashi Ohashi, Shinichi Mitani, Hideki Arai, Hidenori Takahashi
  • Publication number: 20030045128
    Abstract: A wafer transfer method, by which, when a wafer is loaded into a system, heat shock applied to the wafer can be relieved, the frequency of occurrence of crystal dislocation such as slip can be decreased, and productivity can be improved due to saving of energy and time required for heating and cooling of the system, and there is also provided a wafer support member used for this method. In this method, a step for transferring wafers so as to replace a wafer, which finishes its thin film growth process, with a following wafer, which is to be subjected to its thin film growth process, is carried out under the temperature being higher than the room temperature, while the wafer 1 is transferred integrally with a wafer support member 2 used for the thin film growth process.
    Type: Application
    Filed: April 19, 2002
    Publication date: March 6, 2003
    Applicant: TOSHIBA KIKAI KABUSHIKI KAISHA
    Inventors: Shyuji Tobashi, Tadashi Ohashi, Katsuyuki Iwata, Shinichi Mitani, Hideki Arai, Hideki Ito
  • Patent number: 6493626
    Abstract: An engine output for bringing the drive power of a motor vehicle to a requested value is determined as a target output. One of the lean burn and the stoichiometric burn is selected as a combustion form that achieves a best fuel consumption performance in terms of the control of the actual engine output to the target output. That is, an output value that serves as a criterion for determining whether to switch the combustion force is determined based on the minimum fuel consumption rate during the stoichiometric-burn operation and the minimum fuel consumption rate during the lean-burn operation in which the fuel consumption involved in the rich spike control is taken into account. If the target output is less than the output value, the lean-burn operation is performed. If the target output is greater than the output value, the stoichiometric-burn operation is performed.
    Type: Grant
    Filed: May 17, 2001
    Date of Patent: December 10, 2002
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Shinichi Mitani, Zenichiro Mashiki, Isao Takagi, Hirofumi Kubota, Hiroya Tanaka
  • Publication number: 20020182892
    Abstract: There is provided a wafer transfer method, by which, when a wafer is loaded into a system, heat shock applied to the wafer can be relieved, the frequency of occurrence of crystal dislocation such as slip can be decreased, and productivity can be improved due to saving of energy and time required for heating and cooling of the system, and there is also provided a wafer support member used for this method. In this method, a step for transferring wafers so as to replace a wafer, which finishes its thin film growth process, with a following wafer, which is to be subjected to its thin film growth process, is carried out under the temperature being higher than the room temperature, while the wafer 1 is transferred integrally with a wafer support member 2 used for the thin film growth process.
    Type: Application
    Filed: December 15, 2000
    Publication date: December 5, 2002
    Inventors: Hideki Arai, Shinichi Mitani, Hideki Ito, Katsuyuki Iwata, Tadashi Ohashi, Shyuji Tobashi
  • Patent number: 6485573
    Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: November 26, 2002
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Kikai Kabushikikaisha
    Inventors: Katsuyuki Iwata, Tadashi Ohashi, Shyuji Tobashi, Shinichi Mitani, Hideki Arai, Hideki Ito
  • Patent number: 6461428
    Abstract: A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program.
    Type: Grant
    Filed: December 5, 2000
    Date of Patent: October 8, 2002
    Assignees: Toshiba Ceramics Co., Ltd., Toshiba Kikai Kabushiki Kaisha
    Inventors: Shyuji Tobashi, Tadashi Ohashi, Katsuyuki Iwata, Hiroyuki Saito, Shinichi Mitani, Takaaki Honda, Hideki Arai, Yoshitaka Murofushi, Kunihiko Suzuki, Hidenori Takahashi, Hideki Ito, Hirofumi Katsumata
  • Patent number: 6401022
    Abstract: A vehicle drive power control apparatus and method control the speed ratio of a transmission based on a speed shift line that is set so that, within a practical region, the speed shift line is in a low revolution speed side of an optimal fuel consumption line determined based on the efficiency of the engine and the efficiency of the transmission. Therefore, the width of increase in revolution speed from the speed occurring at the beginning of the practical region is curbed. Hence, the fuel consumption resulting from inertia torques caused by fluctuations in engine revolution speed, that is, fluctuations in the revolution speed of the input shaft of the transmission and a fluidic power transfer mechanism, is reduced, so that the efficiency as a whole increases and the fuel economy improves in comparison with the case where the optimal fuel consumption line is used as a control basis.
    Type: Grant
    Filed: May 22, 2001
    Date of Patent: June 4, 2002
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hirofumi Kubota, Zenichiro Mashiki, Isao Takagi, Hiroya Tanaka, Shinichi Mitani
  • Patent number: 6389348
    Abstract: A target driving force is calculated by an ECU on the basis of an accelerator opening and a vehicle speed, and a rounded target driving force value (or a corrected target driving force), as gradually changed from the driving force, is determined in the course to reach the target driving force. On the other hand, a rounded target power value (or a corrected target power) is determined on the basis of the rounded target driving force value. Moreover, the gear ratio of a CVT is controlled according to a target power calculated on the basis of the target driving force, and the load on an engine is controlled on the basis of the rounded target power value, so that the reduction in the power characteristics or the physical discomfort, as might otherwise be caused by the difference in the response between the engine and the CVT, is loosened.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: May 14, 2002
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Isao Takagi, Zenichiro Mashiki, Hirofumi Kubota, Hiroya Tanaka, Shinichi Mitani, Yasushi Ito
  • Publication number: 20020045009
    Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.
    Type: Application
    Filed: August 6, 2001
    Publication date: April 18, 2002
    Applicant: TOSHIBA CERAMICS CO., LTD.
    Inventors: Shuji Tobashi, Tadashi Ohashi, Shinichi Mitani, Hideki Arai, Hidenori Takahashi
  • Patent number: 6352491
    Abstract: A fuel supply amount control apparatus for an internal combustion engine uses an idling control amount QISC obtained by reducing an idling control amount Qa by an idling control amount correction value KQISC, when determining the amount of fuel injected for the lean combustion when the vehicle is running. Therefore, during the lean combustion with the D range is selected, there is substantially no difference between the road load amount of fuel injected during the idling state and the road load amount of fuel injected during a low-speed running of the vehicle. Hence, an increase in the amount of fuel injection during the low-speed running of the vehicle based on the lean combustion achieved upon a fuel increase request does not result in an excessively great output torque of the engine, so that the low-speed running of the vehicle becomes stable and good drivability can be maintained.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: March 5, 2002
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Zenichiro Mashiki, Isao Takagi, Hirofumi Kubota, Hiroya Tanaka, Shinichi Mitani