Patents by Inventor Shinji Kubota
Shinji Kubota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11898840Abstract: A measuring device includes a substrate disposed on a substrate support of a plasma processing apparatus, a transmission circuit, a transmitting antenna, a receiving antenna, a reception demodulation circuit, and a calculator which are provided in the substrate. The transmission circuit generates a microwave. The transmitting antenna transmits the microwave generated by the transmission circuit as a transmission wave. The receiving antenna receives a reflected wave of the transmission wave by plasma above the substrate support as at least one reception wave. The reception demodulation circuit generates a signal that reflects a thickness of a sheath between the substrate and the plasma, from the reception wave. The calculator obtains the thickness of the sheath from the signal generated by the reception demodulation circuit.Type: GrantFiled: June 23, 2021Date of Patent: February 13, 2024Assignee: TOKYO ELECTRON LIMITEDInventor: Shinji Kubota
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Publication number: 20240031539Abstract: A control method for a first projector functioning as a display apparatus includes, when input of an image signal to the first projector is detected, displaying, by the first projector, an image based on the image signal and, when the input of the image signal is not detected, executing calibration for the first projector.Type: ApplicationFiled: July 25, 2023Publication date: January 25, 2024Inventor: Shinji KUBOTA
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Patent number: 11871503Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: GrantFiled: February 4, 2022Date of Patent: January 9, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Dokan, Shinji Kubota, Chishio Koshimizu
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Publication number: 20230377843Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Taichi HIRANO, Toru HAYASAKA, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN
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Patent number: 11791135Abstract: A plasma processing apparatus includes a chamber, substrate support, radio-frequency (RF) power supply, bias power supply, measuring device, and controller. The RF power supply provides RF power to a lower electrode included in the substrate support in the chamber or to an upper electrode. The bias power supply provides RF bias power to the lower electrode. The measuring device measures a frequency of a reflected wave of the RF power returned toward the RF power supply. The controller controls the bias power supply to adjust a power level of the RF bias power to a peak value of absolute values of negative shifts in frequency of the reflected wave from a frequency of the RF power, or controls the RF power supply to modulate the RF power in a cycle obtained based on an occurrence time of the peak of absolute values.Type: GrantFiled: October 20, 2021Date of Patent: October 17, 2023Assignee: TOKYO ELECTRON LIMITEDInventor: Shinji Kubota
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Patent number: 11764082Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.Type: GrantFiled: July 17, 2019Date of Patent: September 19, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Shinji Kubota, Koji Maruyama, Takashi Dokan, Koichi Nagami
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Patent number: 11742182Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: GrantFiled: March 22, 2022Date of Patent: August 29, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Taichi Hirano, Toru Hayasaka, Shinji Kubota, Koji Maruyama, Takashi Dokan
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Patent number: 11742181Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: GrantFiled: June 28, 2021Date of Patent: August 29, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Taichi Hirano, Toru Hayasaka, Shinji Kubota, Koji Maruyama, Takashi Dokan
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Patent number: 11631572Abstract: In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.Type: GrantFiled: October 13, 2021Date of Patent: April 18, 2023Assignee: Tokyo Electron LimitedInventor: Shinji Kubota
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Patent number: 11601628Abstract: A control method of a spectroscopic imaging device including an imaging element and a spectral element, the control method includes causing the spectroscopic imaging device to generate a first measurement spectrum consisting of N1 wavelengths by imaging a target object by making output wavelengths of a spectral element different when the spectroscopic imaging device is in a high accuracy mode and causing the spectroscopic imaging device to generate a second measurement spectrum consisting of N2 wavelengths by imaging the target object by making the output wavelengths of the spectral element different when the spectroscopic imaging device is in a high speed mode, in which N1 is an integer greater than or equal to two, and N2 is an integer less than N1.Type: GrantFiled: May 25, 2021Date of Patent: March 7, 2023Assignee: SEIKO EPSON CORPORATIONInventors: Akira Sano, Shinji Kubota
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Patent number: 11581170Abstract: A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.Type: GrantFiled: September 2, 2020Date of Patent: February 14, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Shinji Kubota, Yuji Aota, Chishio Koshimizu
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Patent number: 11531255Abstract: A projector includes a projector main body including an optical unit for generating an image light beam, and a projection optical device attached to a mounting part of the projector main body, and projecting the image light beam generated by the optical unit on a screen, a chassis of the projection optical device includes a camera attachment part to which a camera is attached, and an imaging range of the camera attached to the camera attachment part includes at least a part of a projection image projected by the projection optical device.Type: GrantFiled: November 27, 2020Date of Patent: December 20, 2022Assignee: SEIKO EPSON CORPORATIONInventor: Shinji Kubota
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Patent number: 11528459Abstract: A projector controlling method includes projecting image light on a screen on which at least three markers are placed in one direction along a curved projector surface to form a projection image and adjusting the projection position based on a captured image of the projection image and the markers which is captured by a camera in such a way that positions on the outer edge of a projection area of the projection image substantially coincide with the positions of the markers.Type: GrantFiled: March 30, 2021Date of Patent: December 13, 2022Assignee: SEIKO EPSON CORPORATIONInventor: Shinji Kubota
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Patent number: 11476089Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: GrantFiled: September 10, 2020Date of Patent: October 18, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Taichi Hirano, Toru Hayasaka, Shinji Kubota, Koji Maruyama, Takashi Dokan
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Publication number: 20220301825Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.Type: ApplicationFiled: June 8, 2022Publication date: September 22, 2022Applicant: Tokyo Electron LimitedInventors: Shinji KUBOTA, Kazuya NAGASEKI, Shinji HIMORI, Koichi NAGAMI
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Patent number: 11387077Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.Type: GrantFiled: November 24, 2020Date of Patent: July 12, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Shinji Kubota, Kazuya Nagaseki, Shinji Himori, Koichi Nagami
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Publication number: 20220216036Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Taichi HIRANO, Toru HAYASAKA, Shinji KUBOTA, Koji MARUYAMA, Takashi DOKAN
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Publication number: 20220159820Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: ApplicationFiled: February 4, 2022Publication date: May 19, 2022Applicant: Tokyo Electron LimitedInventors: Takashi DOKAN, Shinji KUBOTA, Chishio KOSHIMIZU
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Patent number: 11337297Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.Type: GrantFiled: June 10, 2019Date of Patent: May 17, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Dokan, Shinji Kubota, Chishio Koshimizu
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Patent number: 11323672Abstract: A projector includes a first control section and a projector main body to which a camera is detachably mountable. The first control section is configured to be capable of communicating with the camera when the camera is detached from the projector main body. When the camera is mounted on the projector main body, the first control section executes first processing. When the camera is detached from the projector main body, the first control section enables communication connection to the camera and executes second processing different from the first processing.Type: GrantFiled: November 27, 2020Date of Patent: May 3, 2022Assignee: SEIKO EPSON CORPORATIONInventor: Shinji Kubota