Abstract: A nitride semiconductor light-emitting element includes: an n-side semiconductor layer; one or more light-emitting layers disposed above the n-side semiconductor layer; a first barrier layer disposed above the one or more light-emitting layers and including Al; a second barrier layer disposed above the first barrier layer and including Al; a p-side guiding layer disposed above the second barrier layer and having an Al composition ratio smaller than an Al composition ratio of the second barrier layer; an electron blocking layer disposed above the p-side guiding layer, including Mg, and having an Al composition ratio larger than the Al composition ratio of the second barrier layer; and a p-side semiconductor layer disposed above the electron blocking layer.

Abstract: An optical device includes a thin film Lithium Niobate (LN) layer, a first optical waveguide, and a second optical waveguide. The thin film LN layer is an X-cut or a Y-cut LN layer. The first optical waveguide is an optical waveguide that is formed on the thin film LN layer along a direction that is substantially perpendicular to a Z direction of a crystal axis of the thin film LN layer. The second optical waveguide is an optical waveguide that is routed and connected to the first optical waveguide. At least a part of a core of the first optical waveguide is made thicker than a core of the second optical waveguide.

Abstract: A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm?3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

Abstract: Space purification device according to the present disclosure includes hypochlorous acid water generator, mixing bath, hypochlorous acid water supply unit, water supply unit, humidifying purification unit, and control unit. Control unit is configured to, after a humidifying purification operation using the mixture water has finished, perform a first washing operation of causing water supply unit to supply water to electrolytic bath and of causing hypochlorous acid water supply unit to supply water stored in electrolytic bath to mixing bath, without performing the electrolyzing.

Abstract: A nitride semiconductor light-emitting element includes: a nitride semiconductor that has two resonator faces opposed to each other; and a dielectric multilayer film that is layered on at least one resonator face of the two resonator faces. For example, the dielectric multilayer film layered on a resonator face includes a first dielectric film layered on the resonator face and a second dielectric film layered on the first dielectric film. The first dielectric film includes aluminum oxynitride. The second dielectric film includes aluminum oxide. The first dielectric film is a crystalline film. At least one of chemical elements of yttrium or lanthanum is added to the first dielectric film. At least one of chemical elements of yttrium or lanthanum is added to the second dielectric film.

Abstract: Space cleaning device includes: hypochlorous acid water generator; mixing bath storing a mixture of the hypochlorous acid water and water; hypochlorous acid water supply unit; water supply unit; water level sensor detecting a water level of the water mixture; humidifying purifier micronizing the water mixture and releases the water mixture micronized into air; and control unit controlling operations of hypochlorous acid water supply unit and water supply unit. Control unit is configured, after supplying the hypochlorous acid water and the water to fill mixing bath with the water mixture, controls an operation of hypochlorous acid water supply unit to supply a predetermined amount of the hypochlorous acid water to mixing bath once in every predetermined time period, and controls an operation of water supply unit to supply the water to mixing bath based on information related to the water level of the water mixture received from water level sensor.

Abstract: A notch detecting method for detecting a notch defined in an outer circumferential portion of a wafer includes a placing step of placing the wafer on a rotary table, an image capturing step of acquiring an image of the outer circumferential portion of the wafer, a contour data acquiring step of acquiring contour data including coordinates of a contour of the wafer, a hypothetical circle calculating step of calculating a hypothetical circle that approximates the contour of the wafer, an irregularly shaped area determining step of determining whether an irregularly shaped area exists in the outer circumferential portion of the wafer or not, and a first notch determining step of determining whether the irregularly shaped area is the notch or not.

Abstract: The seamless steel pipe according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.15 to 0.45%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.030% or less, S: 0.0050% or less, Al: 0.005 to 0.070%, Cr: 0.30 to 1.50%, Mo: 0.25 to 2.00%, Ti: 0.002 to 0.020%, Nb: 0.002 to 0.100%, B: 0.0005 to 0.0040%, rare earth metal: 0.0001 to 0.0015%, Ca: 0.0001 to 0.0100%, N: 0.0100% or less and O: 0.0020% or less, with the balance being Fe and impurities, and satisfying Formula (1) described in the description. A predicted maximum major axis of inclusions is 150 ?m or less, the predicted maximum major axis being predicted by means of extreme value statistical processing. The yield strength is within a range of 758 to 862 MPa.

Abstract: A seamless steel pipe heat-treatment-finishing-treatment continuous facility includes: a heat treatment apparatus; a steel pipe inspection apparatus which performs a test for a surface defect and/or an inner defect of the seamless steel pipe, the steel pipe inspection apparatus being disposed downstream of the heat treatment apparatus; a main transfer mechanism which forms a main transfer path MT for transferring the seamless steel pipe, discharged from the heat treatment apparatus, to the steel pipe inspection apparatus disposed downstream of the heat treatment apparatus; and a first forced steel pipe-temperature reduction apparatus which forcibly reduces a temperature of the seamless steel pipe on the main transfer path MT, the first forced steel pipe-temperature reduction apparatus being disposed on the main transfer path MT at a position downstream of the heat treatment apparatus and upstream of the steel pipe inspection apparatus.

Abstract: A nitride semiconductor light-emitting element includes: an N-type cladding layer; an N-side first guide layer; an N-side second guide layer; an active layer including a well layer and a barrier layer; and a P-type cladding layer. The band gap energy of the barrier layer is larger than the band gap energy of the N-side second guide layer. The band gap energy of the N-side second guide layer is smaller than the band gap energy of the N-side first guide layer. The band gap energy of the N-side first guide layer is smaller than the band gap energy of the N-type cladding layer. The cladding layers, the guide layers, and the barrier layer each comprise a nitride semiconductor including Al.

Abstract: The steel material according to the present disclosure contains, in mass %, C: 0.20 to 0.45%, Si: 1.36 to 3.20%, Mn: 0.02 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.36 to 1.50%, V: 0.01 to 0.90%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0100% or less, and O: 0.0100% or less, and satisfies Formula (1). A yield strength ?YS is 758 MPa or more. The yield strength ?YS and a dislocation density ? satisfy Formula (2).

Abstract: Humidifying and cleaning device of the present disclosure includes: centrifugal crushing unit that generates hypochlorous acid water micronized by a micronization operation for micronizing hypochlorous acid water stored in humidifier tank, and causes air flowing inside of the humidifying and cleaning unit to contain and release the hypochlorous acid water micronized by the micronization operation; and humidification controller that controls the micronization operation. Humidification controller is configured to perform a first treatment of draining the hypochlorous acid water stored in humidifier tank and supplying new hypochlorous acid water based on time information specified in advance during the micronization operation, that is, time information from when the micronization operation is started until a content of the hypochlorous acid contained in the hypochlorous acid water stored in humidifier tank becomes less than or equal to a reference content.

Abstract: The steel pipe according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.25 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr: 0.30 to 1.50%, Mo: 0.25 to 3.00%, Ti: 0.002 to 0.050%, N: 0.0010 to 0.0100% and O: 0.0030% or less, with the balance being Fe and impurities. The steel pipe contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The tensile yield strength in the axial direction and the circumferential direction is 862 to 965 MPa, and the yield ratio in the axial direction is 90% or more. The tensile yield strength in the circumferential direction is 30 to 80 MPa higher than the compressive yield strength in the circumferential direction.

Abstract: A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3.

Abstract: The steel pipe according to the present disclosure contains a chemical composition consisting of, in mass %, C: more than 0.50 to 0.65%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr: 0.30 to 1.50%, Mo: 0.25 to 3.00%, Ti: 0.002 to 0.050%, N: 0.0010 to 0.0100% and O: 0.0030% or less, with the balance being Fe and impurities. The steel pipe contains an amount of dissolved C within a range of 0.010 to 0.060 mass %. The tensile yield strength in the axial direction and the circumferential direction is 862 to 1069 MPa, and the yield ratio in the axial direction is 90% or more. The tensile yield strength in the circumferential direction is 30 to 80 MPa higher than the compressive yield strength in the circumferential direction.

Abstract: A light source module includes a first semiconductor laser element hermetically sealed, a second semiconductor laser element hermetically sealed, and firth to fourth optical elements. A first laser beam prior to reaching the first optical element has divergence angle ?fd1 in a direction along a second optical axis and divergence angle ?sd1 in a direction along a third optical axis, and satisfy 90°>?fd1>?sd1>0°. Divergence angle ?fd12 of a first laser beam in the direction along the second optical axis decreases from divergence angle ?fd1, the first laser beam having exited the first optical element. A component of a first laser beam in the direction along the second optical axis is collimated, the first laser beam having exited the second optical element. The same applies to the second semiconductor laser element.

Abstract: Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Abstract: A nitride semiconductor laser element includes a stacked structure and a dielectric multilayer film, The dielectric multilayer film includes a first dielectric film, a second dielectric film, and a third dielectric film in the stated order. The nitride semiconductor laser element satisfies the following expressions: ? nk × dk + ni × di + nj × dj = m ? 1 × ? 4 ± ? 16 ; nj × dj = m ? 2 × ? / 4 ± ? / 16 ; and 3 ? ? 16 ? ? nk × dk ? 5 ? ? 16 .

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.20 to 0.35%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr 0.25 to 0.80%, Mo: 0.20 to 2.00%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0020 to 0.0100% and O: 0.0100% or less, with the balance being Fe and impurities, and satisfying Formula (1). A number density of precipitates having an equivalent circular diameter of 400 nm or more is 0.150 particles/?m2 or less. The yield strength is within a range of 655 to 965 MPa. A dislocation density ? is 7.0×1014 m?2 or less. 5×Cr—Mo-2×(V+Ti)?3.

Abstract: It has been confirmed that even though there is a difference in the dimension of a perpendicular reference surface of a permanent magnet, there is almost no change in surface magnetic flux density, and variations in the dimension of the perpendicular reference surface do not much affect the surface magnetic flux density. Therefore, even though variations occur in the dimension of the perpendicular reference surface, variations in the characteristics of an IPM motor are prevented.