Abstract: It has been confirmed that even though there is a difference in the dimension of a perpendicular reference surface of a permanent magnet, there is almost no change in surface magnetic flux density, and variations in the dimension of the perpendicular reference surface do not much affect the surface magnetic flux density. Therefore, even though variations occur in the dimension of the perpendicular reference surface, variations in the characteristics of an IPM motor are prevented.

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.10 to 0.60%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, V: 0.01 to 0.60%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0020 to 0.0100%, and O: 0.0100% or less, with the balance being Fe and impurities. A dislocation density ? is 3.5×1015 m?2 or less. Among fine precipitates, the numerical proportion of precipitates for which a ratio of the Mo content is not more than 50% is 15% or more. The yield strength is in a range of 655 to 1172 MPa.

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: more than 0.20 to 0.35%, Si: 0.05 to 1.00%, Mn: 0.02 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.40 to 1.50%, Mo: 0.30 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities, and satisfies Formula (1) and Formula (2) described in the description. The yield strength is 862 MPa or more. A numerical proportion of precipitates having an equivalent circular diameter within a range of 20 to 300 nm among precipitates having an equivalent circular diameter of 20 nm or more in the steel material is 0.85 or more.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.20 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.030% or less, S: less than 0.0050%, Al: 0.005 to 0.050%, Cr: 0.10 to 1.50%, Mo: 0.25 to 1.80%, Ti: 0.002 to 0.050%, Nb: 0.002 to 0.100%, B: 0.0001 to 0.0050%, N: 0.0070% or less and O: less than 0.0050% with the balance being Fe and impurities. A yield strength is within a range of 655 to 1069 MPa, and a yield ratio is 85% or more. A proportion of KAM values of 1° or less is 30 area % or more.

Abstract: A laser processing device includes: a first laser oscillator that emits a first laser beam having a peak wavelength of a first wavelength; a second laser oscillator that emits a second laser beam having a peak wavelength of a second wavelength different than the first wavelength; a drive controller that drives each of the first laser oscillator and the second laser oscillator; and an analyzer that obtains signal light from a workpiece and adjusts one or more processing conditions for the workpiece based on the obtained signal light. The drive controller drives the first laser oscillator and the second laser oscillator according to the one or more processing conditions to change an intensity of at least one of the first laser beam or the second laser beam and irradiate the workpiece with at least one of the first laser beam or the second laser beam.

Abstract: It can be considered that a cross-sectional shape of a permanent magnet having a parallel reference surface is obtained by removing a portion from a cross-sectional shape of a permanent magnet which does not have the parallel reference. A cross-sectional area of the permanent magnet is further reduced than that of the permanent magnet which does not have the parallel reference surface. In addition, also a magnet volume of the permanent magnet is further reduced than that of the permanent magnet that does not have the parallel reference surface. The inventors have confirmed that a decrease in magnet volume induced by the parallel reference surface does not affect the characteristics of an IPM motor.

Abstract: A semiconductor light-emitting element includes a light emission layer including a group III nitride semiconductor; an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al; and a p-type clad layer disposed above and in contact with the electron barrier layer, wherein the electron barrier layer and the p-type clad layer contain Mg as a dopant, and the p-type clad layer includes a high carbon concentration region containing carbon and a low carbon concentration region having a carbon concentration lower than a carbon concentration of the high carbon concentration region, in a stated order from an electron barrier layer side.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: more than 0.50 to 0.80%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.060 mass %. The steel material also has a yield strength within a range of 862 to less than 965 MPa, and a yield ratio of the steel material is 90% or more.

Abstract: A notch detecting method for detecting a notch defined in an outer circumferential portion of a wafer includes a placing step of placing the wafer on a rotary table, an image capturing step of acquiring an image of the outer circumferential portion of the wafer, a contour data acquiring step of acquiring contour data including coordinates of a contour of the wafer, a hypothetical circle calculating step of calculating a hypothetical circle that approximates the contour of the wafer, an irregularly shaped area determining step of determining whether an irregularly shaped area exists in the outer circumferential portion of the wafer or not, and a first notch determining step of determining whether the irregularly shaped area is the notch or not.

Abstract: A steel material according to the present disclosure has a chemical composition consisting of, in mass %: C: 0.20 to 0.45%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.030% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr: 0.60 to 1.50%, Mo: more than 1.00 to 2.00%, Ti: 0.002 to 0.020%, V: 0.05 to 0.30%, Nb: 0.005 to 0.100%, B: 0.0005 to 0.0040%, N: 0.0100% or less, O: less than 0.0020%, and the balance being Fe and impurities, and satisfying Formula (1) described in the specification. A grain diameter of a prior-austenite grain is 11.0 ?m or less, and an average area of precipitate which is precipitated in a prior-austenite grain boundary is 10.0×10?3 ?m2 or less. A yield strength is 758 to 862 MPa.

Abstract: A micro camera is placed in an appropriate image capturing position therefor on the basis of a center-to-center distance depending on a rotational angle of a holding table. Even in the case where the center C0 of a holding surface and the center C1 of a wafer are displaced out of alignment with each other, allowing a position in X-axis directions of an outer circumference of the wafer to vary as the holding table rotates, a control unit can make an image capturing range of the micro camera follow the varying position of the outer circumference of the wafer. Therefore, the image capturing range of the micro camera can be determined with ease. Both a surface of the wafer and the outer circumference of the wafer can be inspected simply when two cameras are moved along the X-axis directions by a single X-axis moving mechanism.

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.10 to 0.60%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, V: 0.01 to 0.60%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0020 to 0.0100%, and O: 0.0100% or less, with the balance being Fe and impurities. A dislocation density ? is 3.5×1015 m?2 or less. Among fine precipitates, the numerical proportion of precipitates for which a ratio of the Mo content is not more than 50% is 15% or more. The yield strength is in a range of 655 to 1172 MPa.

Abstract: A semiconductor light-emitting device includes: a first semiconductor layer containing a first conductivity type nitride semiconductor; an active layer containing a nitride semiconductor including Ga or In; an electron barrier layer containing a nitride semiconductor including at least Al, and being of a second conductivity type; and a second semiconductor layer containing a second conductivity type nitride semiconductor. The electron barrier layer includes a region where an Al composition ratio increases monotonically toward the second semiconductor layer. A maximum impurity concentration position of the second conductivity type in the electron barrier layer is located between an interface on an active layer side of the electron barrier layer and an intermediate position between a maximum Al composition ratio position of the electron barrier layer in the region and an interface on an active layer side of the electron barrier layer.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.20 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.030% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.10 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The steel material also has a yield strength within a range of 655 to less than 862 MPa, and a yield ratio of the steel material is 85% or more.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.20 to 0.50%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The steel material also has a yield strength within a range of 965 to 1069 MPa, and a yield ratio of the steel material is 90% or more.

Abstract: The seamless steel pipe according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.15 to 0.45%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.030% or less, S: 0.0050% or less, Al: 0.005 to 0.070%, Cr: 0.30 to 1.50%, Mo: 0.25 to 2.00%, Ti: 0.002 to 0.020%, Nb: 0.002 to 0.100%, B: 0.0005 to 0.0040%, rare earth metal: 0.0001 to 0.0015%, Ca: 0.0001 to 0.0100%, N: 0.0100% or less and O: 0.0020% or less, with the balance being Fe and impurities, and satisfying Formula (1) described in the description. A predicted maximum major axis of inclusions is 150 ?m or less, the predicted maximum major axis being predicted by means of extreme value statistical processing. The yield strength is within a range of 758 to 862 MPa.

Abstract: A non-volatile semiconductor memory device that achieves downsizing as compared to conventional cases is disclosed. A non-volatile semiconductor memory device has a configuration in which a memory cell is disposed between a programming bit line and a reading bit line. The reading bit line provided between adjacent memory cells is shared by the adjacent memory cells. This configuration of the non-volatile semiconductor memory device, in which the reading bit line is shared by the adjacent memory cells, leads to reduction of the number of reading bit lines as compared to that in a conventional configuration, and further leads to reduction of the area of a control circuit and a sense amplifier circuit connected with the reading bit line, thereby achieving downsizing as compared to conventional cases accordingly.

Abstract: A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.20 to 0.35%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr 0.25 to 0.80%, Mo: 0.20 to 2.00%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0020 to 0.0100% and O: 0.0100% or less, with the balance being Fe and impurities, and satisfying Formula (1). A number density of precipitates having an equivalent circular diameter of 400 nm or more is 0.150 particles/?m2 or less. The yield strength is within a range of 655 to 965 MPa. A dislocation density ? is 7.0×1014 m?2 or less. 5×Cr—Mo-2×(V+Ti)?3.

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.15 to 0.45%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.030% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr 0.60 to 1.80%, Mo: 0.80 to 2.30%, Ti: 0.002 to 0.020%, V: 0.05 to 0.30%, Nb: 0.002 to 0.100%, B: 0.0005 to 0.0040%, Cu: 0.01 to 0.50%, Ni: 0.01 to 0.50%, N: 0.0020 to 0.0100% and O: 0.0020% or less, with the balance being Fe and impurities. The number density of BN in the steel material is 10 to 100 particles/100 ?m2. The yield strength of the steel material is 758 MPa or more.