Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.20 to 0.35%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr 0.25 to 0.80%, Mo: 0.20 to 2.00%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0020 to 0.0100% and O: 0.0100% or less, with the balance being Fe and impurities, and satisfying Formula (1). A number density of precipitates having an equivalent circular diameter of 400 nm or more is 0.150 particles/?m2 or less. The yield strength is within a range of 655 to 965 MPa. A dislocation density ? is 7.0×1014 m?2 or less. 5×Cr—Mo-2×(V+Ti)?3.

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.15 to 0.45%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.030% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr 0.60 to 1.80%, Mo: 0.80 to 2.30%, Ti: 0.002 to 0.020%, V: 0.05 to 0.30%, Nb: 0.002 to 0.100%, B: 0.0005 to 0.0040%, Cu: 0.01 to 0.50%, Ni: 0.01 to 0.50%, N: 0.0020 to 0.0100% and O: 0.0020% or less, with the balance being Fe and impurities. The number density of BN in the steel material is 10 to 100 particles/100 ?m2. The yield strength of the steel material is 758 MPa or more.

Abstract: In a semiconductor memory device, voltage application from a memory gate electrode of the memory capacitor to a word line can be blocked by a rectifier element depending on values of voltages applied to the memory gate electrode and the word line without using a conventional control circuit. The configuration eliminates the need to provide a switch transistor and a switch control circuit for turning on and off the switch transistor as in conventional cases, and accordingly achieves downsizing. In the semiconductor memory device, for example, each bit line contact is shared by four anti-fuse memories adjacent to each other and each word line contact is shared by four anti-fuse memories adjacent to each other, thereby achieving downsizing of the entire device as compared to a case in which the bit line contact and the word line contact are individually provided to each anti-fuse memory.

Abstract: The steel material according to the present invention contains a chemical composition consisting of, in mass %, C: 0.25 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.30 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.002 to 0.010% and O: 0.0100% or less, with the balance being Fe and impurities. The steel material also contains an amount of dissolved C within a range of 0.010 to 0.050 mass%. The steel material also contains an yield strength is in a range of 862 to less than 965 MPa, and an yield ratio is 90% or more.

Abstract: A semiconductor light emitting element includes: a GaN substrate; a first semiconductor layer located above the GaN substrate and including a nitride semiconductor of a first conductivity type; an active layer located above the first semiconductor layer and including a nitride semiconductor including Ga or In; an electron barrier layer located above the active layer and including a nitride semiconductor including Al; and a second semiconductor layer located above the electron barrier layer and including a nitride semiconductor of a second conductivity type. The electron barrier layer includes: a first region having an Al composition ratio changing at a first change rate; and a second region having an Al composition ratio changing at a second change rate larger than the first change rate. In the first second regions, the Al composition ratio monotonically increases at the first change rate in the direction from the active layer toward second semiconductor layer.

Abstract: A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm?3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.20 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.030% or less, S: less than 0.0050%, Al: 0.005 to 0.050%, Cr: 0.10 to 1.50%, Mo: 0.25 to 1.80%, Ti: 0.002 to 0.050%, Nb: 0.002 to 0.100%, B: 0.0001 to 0.0050%, N: 0.0070% or less and O: less than 0.0050% with the balance being Fe and impurities. A yield strength is within a range of 655 to 1069 MPa, and a yield ratio is 85% or more. A proportion of KAM values of 1° or less is 30 area % or more.

Abstract: A bending meshing type gear device includes an internal gear, an external gear which meshes with the internal gear, a wave generator which bends and deforms the external gear, and a wave generator bearing which is disposed between the wave generator and the external gear, in which the wave generator bearing has a rolling body and an outer ring, and a minimum inner peripheral length of the external gear is larger than a maximum outer peripheral length of the outer ring.

Abstract: The steel pipe according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.25 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr: 0.30 to 1.50%, Mo: 0.25 to 3.00%, Ti: 0.002 to 0.050%, N: 0.0010 to 0.0100% and O: 0.0030% or less, with the balance being Fe and impurities. The steel pipe contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The tensile yield strength in the axial direction and the circumferential direction is 862 to 965 MPa, and the yield ratio in the axial direction is 90% or more. The tensile yield strength in the circumferential direction is 30 to 80 MPa higher than the compressive yield strength in the circumferential direction.

Abstract: When a memory cell (MC) is downsized by reducing the distance between a drain region (12a) and a source region (12b) on the surface of a fin (S2) with a high impurity concentration inside the fin (S2), the shape of the fin (S2) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S2) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.

Abstract: A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3.

Abstract: A high-strength steel material that has a chemical composition containing, by mass %, C: 0.30 to 1.0%, Si: 0.05 to 1.0%, Mn: 16.0 to 35.0%, P: 0.030% or less, S: 0.030% or less, Al: 0.003 to 0.06%, N: 0.1% or less, V: 0 to 3.0%, Ti: 0 to 1.5%, Nb: 0 to 1.5%, Cr: 0 to 5.0%, Mo: 0 to 3.0%, Cu: 0 to 1.0%, Ni: 0 to 1.0%, B: 0 to 0.02%, Zr: 0 to 0.5%, Ta: 0 to 0.5%, Ca: 0 to 0.005%, Mg: 0 to 0.005%, and the balance: Fe and impurities, and that satisfies [V+Ti+Nb>2.0], in which: a number density of carbides/carbo-nitrides having a circle-equivalent diameter of 5 to 30 nm precipitating in the steel is 50 to 700/?m2, and a number density of carbides/carbo-nitrides having a circle-equivalent diameter of more than 100 nm precipitating in the steel is less than 10/?m2; a yield stress is 758 MPa or more; and a KISSC value obtained in a DCB test is 33.7 MPa·m0.5 or more.

Abstract: A gypsum panel includes a gypsum core containing a termiticide with poor water solubility, wherein the gypsum core has a first end region, a center region, and a second end region having an equal thickness and extending along a thickness direction from one surface side to another surface side, the termiticide is contained in each of the first end region, the center region, and the second end region, and a content of the termiticide in the center region is lower than a content of the termiticide in the first end region and in the second end region.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: more than 0.50 to 0.80%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.060 mass %. The steel material also has a yield strength within a range of 862 to less than 965 MPa, and a yield ratio of the steel material is 90% or more.

Abstract: The steel pipe according to the present disclosure contains a chemical composition consisting of, in mass %, C: more than 0.50 to 0.65%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr: 0.30 to 1.50%, Mo: 0.25 to 3.00%, Ti: 0.002 to 0.050%, N: 0.0010 to 0.0100% and O: 0.0030% or less, with the balance being Fe and impurities. The steel pipe contains an amount of dissolved C within a range of 0.010 to 0.060 mass %. The tensile yield strength in the axial direction and the circumferential direction is 862 to 1069 MPa, and the yield ratio in the axial direction is 90% or more. The tensile yield strength in the circumferential direction is 30 to 80 MPa higher than the compressive yield strength in the circumferential direction.

Abstract: A seamless steel pipe heat-treatment-finishing-treatment continuous facility includes: a heat treatment apparatus; a steel pipe inspection apparatus which performs a test for a surface defect and/or an inner defect of the seamless steel pipe, the steel pipe inspection apparatus being disposed downstream of the heat treatment apparatus; a main transfer mechanism which forms a main transfer path MT for transferring the seamless steel pipe, discharged from the heat treatment apparatus, to the steel pipe inspection apparatus disposed downstream of the heat treatment apparatus; and a first forced steel pipe-temperature reduction apparatus which forcibly reduces a temperature of the seamless steel pipe on the main transfer path MT, the first forced steel pipe-temperature reduction apparatus being disposed on the main transfer path MT at a position downstream of the heat treatment apparatus and upstream of the steel pipe inspection apparatus.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.20 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.030% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.10 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The steel material also has a yield strength within a range of 655 to less than 862 MPa, and a yield ratio of the steel material is 85% or more.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: 0.20 to 0.50%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.0100% or less and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The steel material also has a yield strength within a range of 965 to 1069 MPa, and a yield ratio of the steel material is 90% or more.

Abstract: A micro camera is placed in an appropriate image capturing position therefor on the basis of a center-to-center distance depending on a rotational angle of a holding table. Even in the case where the center C0 of a holding surface and the center C1 of a wafer are displaced out of alignment with each other, allowing a position in X-axis directions of an outer circumference of the wafer to vary as the holding table rotates, a control unit can make an image capturing range of the micro camera follow the varying position of the outer circumference of the wafer. Therefore, the image capturing range of the micro camera can be determined with ease. Both a surface of the wafer and the outer circumference of the wafer can be inspected simply when two cameras are moved along the X-axis directions by a single X-axis moving mechanism.

Abstract: A semiconductor light emitting element includes: a GaN substrate; a first semiconductor layer located above the GaN substrate and including a nitride semiconductor of a first conductivity type; an active layer located above the first semiconductor layer and including a nitride semiconductor including Ga or In; an electron barrier layer located above the active layer and including a nitride semiconductor including Al; and a second semiconductor layer located above the electron barrier layer and including a nitride semiconductor of a second conductivity type. The electron barrier layer includes: a first region having an Al composition ratio changing at a first change rate; and a second region having an Al composition ratio changing at a second change rate larger than the first change rate. In the first second regions, the Al composition ratio monotonically increases at the first change rate in the direction from the active layer toward second semiconductor layer.