Abstract: A removal device includes a base, a push rod, a rod-moving mechanism and a rod guide. The base is restrained immovably in a first direction. The push rod can protrude from a front surface of the base toward a front side. The rod-moving mechanism is installed on the base. The rod-moving mechanism moves the push rod toward the front side. The rod guide is attached to the base. The rod guide guides movement of the push rod by the rod-moving mechanism in a second direction that forms an acute angle with respect to the first direction.

Abstract: Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Abstract: A flow passage forming plate includes a plate main body, a peripheral wall, and a ledge. The plate main body has a gas path surface facing a side of a gas flow passage, and an inner surface facing the opposite side from the gas path surface. The peripheral wall protrudes along a peripheral edge of the plate main body, from the inner surface toward an opposite-flow-passage side. The ledge protrudes along an inner wall surface of the peripheral wall, from the inner surface toward the opposite-flow-passage side. The ledge receives an impingement plate having a plurality of through-holes. The ledge is disposed only in a part of an inner wall surface of the peripheral wall.

Abstract: It has been confirmed that even though there is a difference in the dimension of a perpendicular reference surface of a permanent magnet, there is almost no change in surface magnetic flux density, and variations in the dimension of the perpendicular reference surface do not much affect the surface magnetic flux density. Therefore, even though variations occur in the dimension of the perpendicular reference surface, variations in the characteristics of an IPM motor are prevented.

Abstract: It can be considered that a cross-sectional shape of a permanent magnet having a parallel reference surface is obtained by removing a portion from a cross-sectional shape of a permanent magnet which does not have the parallel reference. A cross-sectional area of the permanent magnet is further reduced than that of the permanent magnet which does not have the parallel reference surface. In addition, also a magnet volume of the permanent magnet is further reduced than that of the permanent magnet that does not have the parallel reference surface. The inventors have confirmed that a decrease in magnet volume induced by the parallel reference surface does not affect the characteristics of an IPM motor.

Abstract: A high-strength steel material that has a chemical composition containing, by mass %, C: 0.30 to 1.0%, Si: 0.05 to 1.0%, Mn: 16.0 to 35.0%, P: 0.030% or less, S: 0.030% or less, Al: 0.003 to 0.06%, N: 0.1% or less, V: 0 to 3.0%, Ti: 0 to 1.5%, Nb: 0 to 1.5%, Cr: 0 to 5.0%, Mo: 0 to 3.0%, Cu: 0 to 1.0%, Ni: 0 to 1.0%, B: 0 to 0.02%, Zr: 0 to 0.5%, Ta: 0 to 0.5%, Ca: 0 to 0.005%, Mg: 0 to 0.005%, and the balance: Fe and impurities, and that satisfies [V+Ti+Nb>2.0], in which: a number density of carbides/carbo-nitrides having a circle-equivalent diameter of 5 to 30 nm precipitating in the steel is 50 to 700/?m2, and a number density of carbides/carbo-nitrides having a circle-equivalent diameter of more than 100 nm precipitating in the steel is less than 10/?m2; a yield stress is 758 MPa or more; and a KISSC value obtained in a DCB test is 33.7 MPa·m0.5 or more.

Abstract: A memory cell includes a memory gate structure, a first select gate structure, and a second select gate structure. In the memory gate structure, a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a metal memory gate electrode are stacked in this order. The first select gate structure includes a metal first select gate electrode along a first sidewall spacer provided on a sidewall of the memory gate structure. The second select gate structure includes a metal second select gate electrode along a second sidewall spacer provided on another sidewall of the memory gate structure. Thus, the metal memory gate electrode, the metal first select gate electrode, and the metal second select gate electrode can be formed of a same metallic material as a metal logic gate electrode, permitting the memory cell to be formed together with the metal logic gate electrode.

Abstract: A non-volatile semiconductor memory device that achieves downsizing as compared to conventional cases is disclosed. A non-volatile semiconductor memory device has a configuration in which a memory cell is disposed between a programming bit line and a reading bit line. The reading bit line provided between adjacent memory cells is shared by the adjacent memory cells. This configuration of the non-volatile semiconductor memory device, in which the reading bit line is shared by the adjacent memory cells, leads to reduction of the number of reading bit lines as compared to that in a conventional configuration, and further leads to reduction of the area of a control circuit and a sense amplifier circuit connected with the reading bit line, thereby achieving downsizing as compared to conventional cases accordingly.

Abstract: The steel material according to the present invention contains a chemical composition consisting of, in mass %, C: 0.25 to 0.50%, Si: 0.05 to 0.50%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.30 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.002 to 0.010% and O: 0.0100% or less, with the balance being Fe and impurities. The steel material also contains an amount of dissolved C within a range of 0.010 to 0.050 mass %. The steel material also contains an yield strength is in a range of 862 to less than 965 MPa, and an yield ratio is 90% or more.

Abstract: The steel material according to the present disclosure contains a chemical composition consisting of, in mass %, C: more than 0.50 to 0.80%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: 0.025% or less, S: 0.0100% or less, Al: 0.005 to 0.100%, Cr: 0.20 to 1.50%, Mo: 0.25 to 1.50%, Ti: 0.002 to 0.050%, B: 0.0001 to 0.0050%, N: 0.002 to 0.010% and O: 0.0100% or less, with the balance being Fe and impurities. The steel material contains an amount of dissolved C within a range of 0.010 to 0.060 mass %. The steel material also has a yield strength within a range of 965 to 1069 MPa, and a yield ratio of the steel material is 90% or more.

Abstract: A memory cell includes a memory gate structure, a first select gate structure, and a second select gate structure. In the memory gate structure, a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a metal memory gate electrode are stacked in this order. The first select gate structure includes a metal first select gate electrode along a first sidewall spacer provided on a sidewall of the memory gate structure. The second select gate structure includes a metal second select gate electrode along a second sidewall spacer provided on another sidewall of the memory gate structure. Thus, the metal memory gate electrode, the metal first select gate electrode, and the metal second select gate electrode can be formed of a same metallic material as a metal logic gate electrode, permitting the memory cell to be formed together with the metal logic gate electrode.

Abstract: A bending meshing type gear device includes an internal gear, an external gear which meshes with the internal gear, a wave generator which bends and deforms the external gear, and a wave generator bearing which is disposed between the wave generator and the external gear, in which the wave generator bearing has a rolling body and an outer ring, and a minimum inner peripheral length of the external gear is larger than a maximum outer peripheral length of the outer ring.

Abstract: A memory cell includes a memory gate structure, a first select gate structure, and a second select gate structure. In the memory gate structure, a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a metal memory gate electrode are stacked in this order. The first select gate structure includes a metal first select gate electrode along a first sidewall spacer provided on a sidewall of the memory gate structure. The second select gate structure includes a metal second select gate electrode along a second sidewall spacer provided on another sidewall of the memory gate structure. Thus, the metal memory gate electrode, the metal first select gate electrode, and the metal second select gate electrode can be formed of a same metallic material as a metal logic gate electrode, permitting the memory cell to be formed together with the metal logic gate electrode.

Abstract: When a memory cell (MC) is downsized by reducing the distance between a drain region (12a) and a source region (12b) on the surface of a fin (S2) with a high impurity concentration inside the fin (S2), the shape of the fin (S2) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S2) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.

Abstract: A grinding apparatus includes a table having a holding surface, a grinding unit grinding a wafer held on the holding surface, a notification portion notifying an operator of information, an imaging unit illuminating a ground surface of the wafer which is held and ground with an illumination and imaging the ground surface, a detecting portion detecting a cross line in an imaged picture, a memory storing an X-axis and Y-axis coordinate position of an intersection point of the cross line detected, a spotlight illuminating the holding surface at the X-axis and Y-axis coordinate position stored, and a controller causing the notification portion to notify the operator that the cross line has been detected and stopping grinding operations of the grinding apparatus.

Abstract: A memory cell and a non-volatile semiconductor memory device are disclosed. Nitride sidewall layers are respectively disposed in a first sidewall spacer and a second sidewall spacer, to separate a memory gate electrode and a first select gate electrode from each other and the memory gate electrode and a second select gate electrode from each other. Hence, a breakdown voltage is improved around the memory gate electrode as compared with a conventional case in which the first sidewall spacer and the second sidewall spacer are simply made of insulating oxide films. The nitride sidewall layers are disposed farther from a memory well than a charge storage layer. Hence, charge is unlikely to be injected into the nitride sidewall layers at charge injection from the memory well into the charge storage layer, thereby preventing an operation failure due to charge storage in a region other than the charge storage layer.

Abstract: When a memory cell (MC) is downsized by reducing the distance between a drain region (12a) and a source region (12b) on the surface of a fin (S2) with a high impurity concentration inside the fin (S2), the shape of the fin (S2) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S2) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.

Abstract: A semiconductor integrated circuit device includes first and second select gate electrodes that are sidewall-shaped along sidewalls of a memory gate structure. With this configuration, the memory gate structure is not disposed on the first select gate electrode and the second select gate electrode. Accordingly, the memory gate structure the first select gate structure, and the second select gate structure can have equal heights, thereby achieving reduction in size as compared to a conventional case. In addition, a silicide layer on the first select gate electrode and a silicide layer on the second select gate electrode can be separated farther from a memory gate electrode by the thickness of a cap film. Accordingly, the silicide layers on the first select gate electrode and the second select gate electrode are unlikely to contact with the memory gate electrode, thereby preventing a short-circuit defect of the memory gate electrode.

Abstract: A removal device includes a base, a push rod, a rod-moving mechanism and a rod guide. The base is restrained immovably in a first direction. The push rod can protrude from a front surface of the base toward a front side. The rod-moving mechanism is installed on the base. The rod-moving mechanism moves the push rod toward the front side. The rod guide is attached to the base. The rod guide guides movement of the push rod by the rod-moving mechanism in a second direction that forms an acute angle with respect to the first direction.

Abstract: A gypsum panel includes a gypsum core containing a termite repellent with poor water solubility, wherein the gypsum core has a first end region, a center region, and a second end region having an equal thickness and extending along a thickness direction from one surface side to another surface side, the termite repellent is contained in each of the first end region, the center region, and the second end region, and a content of the termite repellent in the center region is lower than a content of the termite repellent in the first end region and in the second end region.