Abstract: An antenna device includes a substrate, two T-shaped radiation portions, two feeding portions and an isolation structure. The substrate has an upper surface, a side surface and a lower surface. Two opposite ends of the side surface are connected to the upper surface and the lower surface, respectively. The two T-shaped radiation portions are located on the upper surface of the substrate. The two feeding portions are connected to the two T-shaped radiation portions, respectively, and the two feeding portions are located on the side surface of the substrate. The isolation structure is located on the upper surface of the substrate, and the isolation structure is disposed between the two T-shaped radiation portions.

Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A system performs a method of adaptive voltage scaling. The method includes generating a voltage adjustment signal based on a hint from a frequency-locked loop (FLL). The FLL includes an oscillator that generates a clock signal at a clock frequency. The voltage adjustment signal is sent to a power management unit (PMU) to cause the PMU to supply an adjusted operating voltage to the FLL. The method further includes updating a minimum code set according to the adjusted operating voltage and an operating temperature. The clock frequency of the oscillator is generated to match a target frequency according to the adjusted operating voltage and a code determined by the FLL from the minimum code set.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: This disclosure relates to a combined power module that includes a base structure, a terminal structure, a second terminal, and a cover. The terminal structure includes a mount assembly and a plurality of first terminals. The mount assembly is assembled on the base structure. The first terminals are disposed on the mount assembly. The second terminal is disposed on the base structure. The cover is disposed on the base structure and covers at least part of the first terminals and at least part of the second terminal.

Abstract: A tray and an electronic device using the same are provided. The tray used to carry an expansion card includes a base, a tray body, a sliding plate, and a limiting spring. The tray body is slidably disposed on the base and has a base portion and two side walls disposed on two sides of the base portion. The sliding plate is slidably disposed on the base portion and is able to be moved away from or close to one of the side walls relative to the tray body selectively. The limiting spring is disposed on the base portion and is used to limit the sliding plate.

Abstract: Techniques for deploying IPv6 routing are disclosed. A system, process, and/or computer program product for deploying IPv6 routing includes advertising in Border Gateway Protocol (BGP) a new address-family capability in combination with an existing address-family in a network that supports a plurality of address families, and undoing BGP filters to allow BGP routes to be exchanged at a time that a network administrator enables the new address-family capability in the network.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A package structure includes a semiconductor device and an adhesive pattern. The adhesive pattern surrounds the semiconductor device, wherein an angle ? is formed between a sidewall of the semiconductor device and a sidewall of the adhesive pattern, 0°<?<90° wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.

Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.

Abstract: A method of making a semiconductor device includes patterning a conductive layer over a substrate to define a conductive pad having a first width. The method includes depositing a passivation layer, wherein the passivation layer directly contacts the conductive pad. The method includes depositing a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The method includes depositing an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The method includes depositing a mask layer over the UBM layer; and forming an opening in the mask layer wherein the opening has the second width. The method includes forming a conductive pillar in the opening on the UBM layer; and etching the UBM layer using the conductive pillar as a mask, wherein the etched UBM layer has the second width.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: The present disclosure provides an antenna system, which includes a defected ground structure board and an antenna structure board. The defected ground structure board includes a first insulating plate and a defected ground structure layer, and the defected ground structure layer is disposed on the first insulating plate. The antenna structure board is disposed on the defected ground structure board. The antenna structure board includes at least one antenna body and a second insulating plate, the at least one antenna body is disposed on the second insulating plate, and the second insulating plate is disposed on the defected ground structure layer.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and conductive pads. The redistribution circuit structure is located on and electrically connected to the semiconductor die, the redistribution circuit structure includes a first contact pad having a first width and a second contact pad having a second width. The conductive pads are located on and electrically connected to the redistribution circuit structure through connecting to the first contact pad and the second contact pad, the redistribution circuit structure is located between the conductive pads and the semiconductor die. The first width of the first contact pad is less than a width of the conductive pads, and the second width of the second contact pad is substantially equal to or greater than the width of the conductive pads.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and conductive pads. The redistribution circuit structure is located on and electrically connected to the semiconductor die, the redistribution circuit structure includes a first contact pad having a first width and a second contact pad having a second width. The conductive pads are located on and electrically connected to the redistribution circuit structure through connecting to the first contact pad and the second contact pad, the redistribution circuit structure is located between the conductive pads and the semiconductor die. The first width of the first contact pad is less than a width of the conductive pads, and the second width of the second contact pad is substantially equal to or greater than the width of the conductive pads.

Abstract: Techniques are described for joint encoding and decoding of information symbols. In one embodiment, a method for joint encoding includes, in part, obtaining a sequence of information symbols, generating a plurality of cyclic codewords each corresponding to a portion of the sequence of information symbols, jointly encoding the plurality of cyclic codewords to generate at least one combined codeword, and providing the combined codeword to a device. The at least one combined codeword may be generated through Galois Fourier Transform (GFT).

Abstract: A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is disposed on the substrate. The lid structure is disposed over substrate, wherein the lid structure includes a main body covering and surrounding the package structure and a plurality of rib portions protruded from the main body and extended toward the package structure.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.