Abstract: A unitary lens structure is provided which is employable with spectacles as well as goggles and safety eyewear and AR and VR eyewear.

Abstract: An optical lens device includes a lens body, an optical filter and an optical absorbance portion. The lens body has a first lens surface and a second lens surface between which to form the optical filter where is to provide the optical absorbance portion. The optical absorbance portion includes a main absorbance area having an absorbance peak portion. The main absorbance area has a first wavelength range between 420 nm and 440 nm formed as a high-energy blue UV absorbance area.

Abstract: The present disclosure relates to a novel platform for immunotherapy which combines CAR or TCR engineered ?? T cells with armoring interleukin IL-36 that can be expressed constitutively or inducibly, or with a chimeric cytokine receptor comprising the endodomain of the IL-36 receptor. The system/platform and the associated methods according to the present disclosure have advantages such as increased immune cell potency and persistence for therapeutic applications.

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

Abstract: Provided are constructs comprising a single-domain antibody (sdAb) moiety that specifically recognizes PD-1. Also provided are methods of making and using these constructs.

Abstract: The present invention provides compositions and methods for reducing inflammation in the lungs of a mammal that is afflicted by a condition that leads to inflammation in the lungs. The compositions and methods described herein include agents that inhibit inflammasome signaling in the mammal such as antibodies directed against inflammasome components used alone or in combination with extracellular vesicle uptake inhibitor(s).

Abstract: A fabricating method of a semiconductor device is provided. A temporary semiconductor structure is provided. The temporary semiconductor structure includes a temporary substrate and a conductive layer, the temporary substrate has a first surface, the conductive layer is disposed on the first surface of the temporary substrate, and the conductive layer includes one or more first trace. Then, a recess is formed in the temporary semiconductor structure to form a first semiconductor structure and a first substrate. The recess penetrates through the first substrate and expose the one or more first trace. Thereafter, an input/output pad is formed in the recess and on the one or more first trace.

Abstract: The present disclosure relates to a novel platform for immunotherapy which combines CAR engineered ?? T cells with armoring interleukin IL-18 that can be expressed constitutively or inducibly, or with a chimeric cytokine receptor comprising the endodomain of the IL-18 receptor. The system/platform and the associated methods according to the present disclosure have advantages such as increased immune cell potency and persistence for therapeutic applications.

Abstract: An optical lens device includes a lens body, an optical filter and an optical absorbance portion. The lens body has a first lens surface and a second lens surface between which to form the optical filter where is to provide the optical absorbance portion. The optical absorbance portion includes a first main absorbance area having a first absorbance peak portion and a second main absorbance area having a second absorbance peak portion. The first main absorbance area has a first wavelength range between 420 nm and 440 nm formed as a high-energy blue UV absorbance area while the second main absorbance area has a second wavelength range between 580 nm and 610 nm.

Abstract: This disclosure is directed to processes and systems for generating data packets in a smart network interface controller (“SNIC”) of a host server computer. A smart packet generator (“spktgen”) controller receives a user command that contains directions for how packets are generated in the SNIC. The command is sent to a spktgen daemon that runs in a control core of the multicore processor. The spktgen daemon extracts the type of packet generator and packet parameters recorded in the command and sends the type of packet generator and packet parameters to a spktgen engine that also runs in the control core. The spktgen engine creates threads in each of one or more data cores of the multicore processor. Each thread comprises instructions for generating data packets from the data generated by data generating sources of the host in accordance with the type of packet generator and the packet parameters.

Abstract: This disclosure describes processes for performing direct memory access (“DMA”) between memory of a host and memory of a smart network interface controller (“SNIC”) connected to a bus of the host. The host runs a host thread in a processor of the host and the SNIC runs a SNIC thread in a processor of the SNIC. The host thread and the SNIC thread facilitate direct access of the SNIC thread to memory locations in the memory of the host. The SNIC thread can fetch data directly from and/or write data directly to the memory locations of the memory of the host over the bus.

Abstract: In one set of embodiments, a hypervisor of a host system can receive a packet processing program from a virtual network interface controller (NIC) driver of a virtual machine (VM) running on the hypervisor. The hypervisor can then attach the packet processing program to a first execution point in a physical NIC driver of the hypervisor and to a second execution point in a virtual NIC backend of the hypervisor, where the virtual NIC backend corresponds to a virtual NIC of the VM that originated the packet processing program.

Abstract: The present application provides constructs comprising a single-domain antibody (sdAb) moiety that specifically recognizes PD-L1. Also provided are methods of making and using these constructs.

Abstract: Provided are modified therapeutic cells that overexpress an immune checkpoint ligand such as PD-L1, CD155, CD112, FGL1, galectin-9, CD47, B7H3 and B7H4, while expressing one or more Major Histocompatibility Complex (MHC) molecules. Also provided are methods of treatment using the modified therapeutic cells.

Abstract: The present disclosure provides systems for inducing activity of immune cells and methods of immunotherapy. Systems of the present disclosure for inducing immune cell activity comprise a chimeric antigen receptor, a T cell receptor, and various combinations thereof.

Abstract: The present application provides GPC2-specific antibodies and antigen binding fragments thereof. A chimeric antigen receptor (CAR) that specifically binds glypican-2 (GPC2) comprising a GPC2-specific antibody, a transmembrane domain, and an intracellular signaling domain. T cells comprising the disclosed CAR constructs can be used for cancer immunotherapy.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

Abstract: In certain aspects, a semiconductor device includes a first semiconductor layer, a first semiconductor structure formed on the first semiconductor layer including a main chip region, and seal ring discontinuous contact structures formed in a seal ring region enclosing the main chip region. Each seal ring discontinuous contact structure includes a seal ring body portion and a through silicon contact (TSC) portion penetrating through the first semiconductor layer and coupled to the seal ring body portion.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes providing a semiconductor substrate. Alternating layers of a first semiconductor layer and a second semiconductor layer are formed. The first semiconductor layer is formed of a first semiconductor material, the second semiconductor layer formed of a second semiconductor material different from the first semiconductor material. The alternating layers of the first semiconductor layer and the second semiconductor layer are patterned to form stacks of the alternating layers and to expose lateral edges of the alternating layers in the stacks. Under etch conditions, the lateral edges of the alternating layers in the stacks are exposed to etchant to selectively etch recesses in the lateral edges of the first semiconductor layer such that a size of the recesses is substantially uniform.

Abstract: An optical lens device includes an optical substrate layer, an optical thin film, an optical polarization layer and a miniature surface structure. The optical substrate layer has a first surface and a second surface and rays of light passes through the optical substrate layer. The optical polarization layer is provided on a surface of the optical thin film. The miniature surface structure is physically processed to form the optical polarization layer and provides a characteristic of optical polarization in the optical polarization layer. The miniature surface structure of the optical thin film provides an optical polarization effect to the rays of light while passing through it.