Patents by Inventor Shu Wu

Shu Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220135687
    Abstract: The present application provides an antibody, such as a monoclonal antibody (mAb), or an antigen binding fragment thereof, that specifically recognizes PD-L1. Also provided are pharmaceutical compositions, or methods of making and using the antibody or antigen binding fragment thereof.
    Type: Application
    Filed: December 28, 2018
    Publication date: May 5, 2022
    Inventors: Shuai Yang, Chuan-Chu Chou, Shu Wu, Liusong Yin, Feng Lin
  • Publication number: 20220096547
    Abstract: Provided are modified immune cells expressing a flagellin polypeptide capable of binding to a toll-like receptor. The modified immune cell further comprises an engineered receptor. Also provided are methods and pharmaceutical compositions for cancer treatment using the modified immune cells.
    Type: Application
    Filed: January 3, 2020
    Publication date: March 31, 2022
    Inventors: Yafeng ZHANG, Shu WU, Zhongyuan TU, Wang ZHANG, Qinghe ZHANG
  • Patent number: 11289568
    Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Wen-Chuan Tai, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Anderson Lin, Fu-Chun Huang, Chun-Ren Cheng, Ivan Hua-Shu Wu, Fan Hu, Ching-Hui Lin, Yan-Jie Liao
  • Publication number: 20220083441
    Abstract: Example implementations relate to data monitoring. An example non-transitory machine-readable medium can include instructions executable by a processor to request, from an agent device on a particular computing device of a plurality of computing devices, monitoring of a particular piece of data associated with the particular computing device. The instructions can be executable to retrieve the event responsive to the agent device detecting an event including a change in the particular piece of data during the monitoring and report the event via a graphical user interface.
    Type: Application
    Filed: May 13, 2019
    Publication date: March 17, 2022
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: Christoph Graham, Xiao-Lu Zhang, Shu-Wu Shi, Wen-Jie Jiang, Jie Xu, Chen Si, Xiaofei Zhu
  • Publication number: 20220068883
    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method can include bonding a first die and a second die face to face, the first die including a substrate, transistors formed on a face side of the first die over a semiconductor layer with an insulating layer between the substrate and the semiconductor layer, and a first contact structure on the face side of the first die extending through the insulating layer. The method can also include exposing the first contact structure from the back side of the first die, forming, from the back side of the first die, a contact hole in the insulating layer to expose the semiconductor layer, and forming, on the back side of the first die, a first pad-out structure connected with the first contact structure and a second pad-out structure, on the contact hole, conductively connected with the semiconductor layer.
    Type: Application
    Filed: December 18, 2020
    Publication date: March 3, 2022
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Liang XIAO, Shu WU
  • Publication number: 20220068882
    Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first die and a second die boned face-to-face. The first die includes first transistors formed on a face side of the first die in a semiconductor portion and at least a contact structure disposed in an insulating portion outside the semiconductor portion. The second die includes a substrate and second transistors formed on a face side of the second die. Further, the semiconductor device includes a first pad structure disposed on a back side of the first die and the first pad structure is conductively coupled with the contact structure. An end of the contact structure protrudes from the insulating portion into the first pad structure. Further, in some embodiments, the semiconductor device includes a connection structure disposed on the back side of the first die and conductively connected with the semiconductor portion.
    Type: Application
    Filed: December 18, 2020
    Publication date: March 3, 2022
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Liang XIAO, Shu WU
  • Publication number: 20220047826
    Abstract: A portable ventilation device is detachably attached to a face mask and communicated with a covered space formed between the face mask and a user wearing the face mask. The portable ventilation device includes a cover and a fan assembly. The cover has an attachment structure that allows the cover to be detachably attached to the face mask. The cover has an air inlet portion and an air outlet portion communicated with the air inlet portion. The fan assembly is positioned between the air inlet portion and the air outlet portion, and serves to introduce an external airflow into the covered space inside the face mask. The external airflow enters the cover through the air inlet portion and enters the covered space through the air outlet portion, thereby facilitating ventilation in the face mask and improving comfort of wearing the face mask.
    Type: Application
    Filed: August 12, 2020
    Publication date: February 17, 2022
    Inventor: JIN-SHU WU
  • Publication number: 20220033481
    Abstract: Novel antibodies, such as single domain antibodies (sdAbs), or antigen-binding fragments thereof that specifically bind a transferrin are described. Compositions, methods and systems for increasing the half-life of a target protein in a serum using an antibody or fragment thereof against a transferrin are also described.
    Type: Application
    Filed: October 11, 2017
    Publication date: February 3, 2022
    Inventors: Yafeng ZHANG, Shu WU, Fei SUN, Shuai YANG, Chuan-Chu CHOU
  • Publication number: 20210407984
    Abstract: A fabricating method of a semiconductor device is provided. A temporary semiconductor structure is provided. The temporary semiconductor structure includes a temporary substrate and a conductive layer, the temporary substrate has a first surface, the conductive layer is disposed on the first surface of the temporary substrate, and the conductive layer includes one or more first trace. Then, a recess is formed in the temporary semiconductor structure to form a first semiconductor structure and a first substrate. The recess penetrates through the first substrate and expose the one or more first trace. Thereafter, an input/output pad is formed in the recess and on the one or more first trace.
    Type: Application
    Filed: September 13, 2021
    Publication date: December 30, 2021
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: He Chen, Zi Qun Hua, Shu Wu, Yong Qing Wang, Liang Xiao
  • Patent number: 11168146
    Abstract: Novel antibodies, such as single domain antibodies (sdAbs), or fragments thereof that specifically bind a transferrin are described. Compositions, methods and systems for increasing the half-life of a target protein in a serum using an antibody or fragment thereof against a transferrin are described.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: November 9, 2021
    Assignee: Nanjing Legend Biotech Co., Ltd.
    Inventors: Fang Liang Zhang, Jianbing Zhang, Shu Wu
  • Publication number: 20210343711
    Abstract: A method for forming a degreFinFET device structure is provided. The method includes forming a first fin structure and a second fin structure over a substrate and forming a liner layer over the first fin structure and the second fin structure. The method also includes forming an isolation layer over the liner layer and removing a portion of the liner layer and a portion of the isolation layer, such that the liner layer includes a first liner layer on an outer sidewall surface of the first fin structure and a second liner layer on an inner sidewall surface of the first fin structure, and a top surface of the second liner layer is higher than a top surface of the first liner layer.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Shu WU, Shu-Uei JANG, Wei-Yeh TANG, Ryan Chia-Jen CHEN, An-Chyi WEI
  • Publication number: 20210324065
    Abstract: The present invention provides compositions and methods for reducing inflammation in the lungs of a mammal that is afflicted by a condition that leads to inflammation in the lungs. The compositions and methods described herein include agents that inhibit inflammasome signaling in the mammal such as antibodies directed against inflammasome components used alone or in combination with extracellular vesicle uptake inhibitor(s).
    Type: Application
    Filed: June 25, 2021
    Publication date: October 21, 2021
    Inventors: Robert W. KEANE, W. Dalton DIETRICH, Nadine KERR, Shu WU, Juan Pablo DE RIVERO VACCARI
  • Publication number: 20210275590
    Abstract: The present application provides single-domain antibodies targeting CD33 and constructs thereof, including chimeric receptors, immune effector cell engagers and immunoconjugates. Further provided are engineered immune cells (such as T cells) comprising an anti-CD33 chimeric receptor and optionally a second chimeric receptor targeting a second antigen or epitope. Pharmaceutical compositions, kits and methods of treating cancer are also provided.
    Type: Application
    Filed: September 10, 2019
    Publication date: September 9, 2021
    Inventors: Yafeng ZHANG, Tailan ZHAN, Fei SUN, Jian LIU, Qing ZHANG, Shu WU
  • Publication number: 20210277126
    Abstract: Provided are single-domain antibodies targeting CLL1 and constructs thereof, including chimeric receptors, immune effector cell engagers and immunoconjugates. Further provided are engineered immune effector cells (such as T cells) comprising an anti-CLL1 chimeric receptor and optionally a second chimeric receptor targeting a second antigen or epitope. Pharmaceutical compositions, kits and methods of treating cancer are also provided.
    Type: Application
    Filed: September 10, 2019
    Publication date: September 9, 2021
    Inventors: Wang ZHANG, Yunlei LIU, Xiaojie TU, Chenyu SHU, Tailan ZHAN, Yun ZHANG, An TANG, Yafeng ZHANG, Shu WU, Qing ZHANG
  • Publication number: 20210275589
    Abstract: Immune cells (such as T cells) comprising a chimeric receptor (CR), a chimeric co-receptor (CCOR), and/or a co-receptor (COR) are provided.
    Type: Application
    Filed: July 12, 2019
    Publication date: September 9, 2021
    Inventors: Ming Zeng, Lu Chen, Shu Wu, Lili Chen, Xun Liu
  • Publication number: 20210269537
    Abstract: Described herein are T cells engineered to express a chimeric antigen receptor (CAR), such as an anti-mesothelin CAR alone or in combination with a follicle-stimulating hormone receptor (FSHR) binding domain and/or a dominant negative transforming growth factor-? receptor II (dnTGF?RII) for the treatment of diseases associated with mesothelin expression. Also described are T cells engineered to express a modified T cell receptor (TCR).
    Type: Application
    Filed: August 29, 2019
    Publication date: September 2, 2021
    Inventors: Qing DAI, Jian LIU, Shuai YANG, Kun JIANG, Yuanyuan PENG, Chen HU, Shu WU
  • Publication number: 20210240011
    Abstract: An optical lens device includes a lens body, an optical filter and an optical absorbance portion. The lens body has a first lens surface and a second lens surface between which to form the optical filter where is to provide the optical absorbance portion. The optical absorbance portion includes a first main absorbance area having a first absorbance peak portion and a second main absorbance area having a second absorbance peak portion. The first main absorbance area has a first wavelength range between 420 nm and 440 nm formed as a high-energy blue UV absorbance area while the second main absorbance area has a second wavelength range between 580 nm and 610 nm.
    Type: Application
    Filed: May 15, 2020
    Publication date: August 5, 2021
    Inventors: Tien-Shu Wu, Yen-Ting Wu
  • Publication number: 20210221891
    Abstract: The present application provides constructs comprising a single-domain antibody (sdAb) moiety that specifically recognizes PD-L1. Also provided are methods of making and using these constructs.
    Type: Application
    Filed: November 13, 2018
    Publication date: July 22, 2021
    Inventors: Yafeng ZHANG, Shu WU, Shuai YANG, Chuan-Chu CHOU
  • Patent number: 11063043
    Abstract: A method for forming a FinFET device structure is provided. The method includes forming a first fin structure and a second fin structure over a substrate and forming a liner layer over the first fin structure and the second fin structure. The method also includes forming an isolation layer over the liner layer and removing a portion of the liner layer and a portion of the isolation layer, such that the liner layer includes a first liner layer on an outer sidewall surface of the first fin structure and a second liner layer on an inner sidewall surface of the first fin structure, and a top surface of the second liner layer is higher than a top surface of the first liner layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Shu Wu, Shu-Uei Jang, Wei-Yeh Tang, Ryan Chia-Jen Chen, An-Chyi Wei
  • Patent number: 11025105
    Abstract: The present invention is a permanent magnet synchronous submersible motor comprised of a motor stator and a rotor core. The motor stator includes a stator core formed by laminating a plurality of stator punching sheets. Each of the stator punching sheets is provided with an odd number of stator slots and any two of a X-phase coil, a Y-phase coil and a Z-phase coil are wound in each of the stator slots. The rotor core is formed by laminating a plurality of rotor punching sheets wherein each of the rotor punching sheets is provided with rotor slots and a permanent magnet inserted into each of the rotor slots. Furthermore, the permanent magnet submersible motor can be started with a conventional V/F controlled (variable frequency) converter.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: June 1, 2021
    Assignee: AILIFT (TIANJIN) SCIENCE CO., LTD.
    Inventors: Shu Wu, Bin Wang