Abstract: A connector assembly is disclosed. The connector assembly includes a connector comprising a dielectric housing, a plurality of electrically conductive terminals disposed at least partially in the dielectric housing, and a connector support assembled to the connector. The connector support includes a pair of U-shaped side supports disposed on opposite sides of the dielectric housing and a pair of elongated fasteners for fastening the connector to a plate. A cable includes a plurality of conductors received inside the dielectric housing through cable opening of the housing and terminated at the termination portions of the conductive terminals.

Abstract: A semiconductor apparatus includes: a heat sink; a die pad provided above and away from the heat sink; a power chip provided on a surface of the die pad opposite to a surface of the die pad facing the heat sink; and mold resin sealing a portion of the heat sink, the die pad and the power chip, wherein a surface of the heat sink facing the die pad includes a flow promotion part formed to separate from a plane including the die pad in a region overlapping the die pad and not overlapping the power chip.

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract: A manufacturing method of a semiconductor device according to the technology disclosed in the present specification includes: providing at least one semiconductor element; connecting, to the semiconductor element, a plurality of first terminals and at least one second terminal that is a control terminal to which a voltage lower than that of the first terminal is applied; and forming a first bent part in the first terminal, in which the first bent part does not protrude on the surfaces, facing each other, of the plurality of first terminals that are adjacent to each other.

Abstract: A droplet dispensing apparatus includes a crystal sensor, a resonance frequency measuring unit, and a controller. The controller is configured to obtain the resonance frequency of the crystal sensor before droplets are discharged from a liquid dropping device, control the liquid dropping device to discharge droplets on to the crystal sensor, and obtain the resonance frequency of the crystal sensor after droplets are discharged from the liquid dropping device. The controller estimates a volatilization amount for the droplets on the crystal sensor based on a temporal change trend in the resonance frequency of the crystal sensor and calculates the total weight of the droplets discharged from the liquid dropping device based on the difference in resonance frequency of the crystal sensor before and after the droplets are discharged and the estimated volatilization amount.

Abstract: Provided is a lead frame of a semiconductor device in which lead terminals with different terminal lengths can be formed without changing width of a frame portion. A lead frame includes: a first terminal portion in which a plurality of first terminals is arranged side by side; a second terminal portion in which a plurality of second terminals wider than the first terminals is arranged side by side; and a frame portion to which a tip end portion of each of the first terminals and the second terminals is connected, wherein first recess portions recessed along the first terminals are provided in the frame portion, and wherein the first terminal portion includes the first terminal the tip end portion of which is sandwiched between the adjacent first recess portions and the first terminal the tip end portion of which is not sandwiched between the adjacent first recess portions.

Abstract: A semiconductor device includes: semiconductor elements; a package sealing the semiconductor elements and being rectangular in a top view; control terminals protruding from a first side of the package; output terminals protruding from a second side facing the first side of the package; and a recessed portion formed in a third side adjacent to the first side and the second side of the package, wherein a part of the control terminals is disposed at end portions of lead frames, the semiconductor device further includes dummy terminals disposed at other end portions of the lead frames, respectively, the dummy terminals protruding from the recessed portion, and an amount of the protrusion of each of the dummy terminals from the recessed portion is smaller than or equal to 0.75 mm.

Abstract: A semiconductor device includes: a rectangular RC-IGBT; an IC chip electrically connected to the RC-IGBT; a plurality of control terminals electrically connected to the IC chip; a plurality of power terminals electrically connected to the RC-IGBT; and a rectangular sealing resin covering the RC-IGBT and the IC chip. The RC-IGBT has an aspect ratio of 1.62 or more, the sealing resin has a lengthwise length of 44 mm or smaller, and the semiconductor device has a rated current of 25 A or more.

Abstract: A semiconductor device includes a power semiconductor element, and a molding resin sealing the power semiconductor element. In plan view, the molding resin has a rectangular shape consisting of a first side and a second side extending along a first direction, and a third side and a fourth side extending along a second direction orthogonal to the first direction. The first side is longer than the third side. The molding resin is provided with a first threaded bore and a second threaded bore, the first threaded bore and the second threaded bore penetrating the molding resin along a third direction orthogonal to the first direction and the second direction.

Abstract: According to the present disclosure, a method of manufacturing a semiconductor device includes the steps of (a) preparing a lead frame including a switching element die pad, a control element die pad, and a third-side side rail portion, (b) mounting a switching element and a diode element on the switching element die pad and mounting a control element configured to control the switching element on the control element die pad, (c) sealing the switching element, the diode element, and the control element with a mold resin such that the power side terminal, the control side terminal, and a part of the third-side side rail portion protrude outward, and (d) forming a third-side side rail terminal by cutting the third-side side rail portion, the third-side side rail terminal extending from a part of the third-side side rail portion.

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract: A liquid discharging device to be used with a liquid dispensing apparatus includes a discharging portion configured to discharge a liquid based on a control signal from the liquid dispensing apparatus on which the liquid discharging device is mounted, and a sheet material having a characteristic configured to be changed by the liquid dispensing apparatus after a discharge of the liquid by the discharging portion.

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract: A liquid discharge head includes a pressure chamber in which liquid can be stored, a diaphragm forming a bottom wall of the pressure chamber and having a nozzle opening through which liquid supplied from the pressure chamber is discharged in a first direction, and a drive element on a lower surface of the diaphragm and configured to change a volume of the pressure chamber. A protective film covers the drive element and having a first opening corresponding in position with the nozzle opening, and a liquid repellent film covers the protective film and the lower surface of the diaphragm within the first opening. The liquid repellent film has an opening aligned with the nozzle opening and has the same diameter as the nozzle opening. The liquid repellent film on the drive element is thinner than the liquid repellent film on the lower surface of the diaphragm within the first opening.

Abstract: A liquid dispensing apparatus includes a mounting unit on which a liquid discharging device is mounted, a driving circuit to supply driving voltages to an actuator of the liquid discharging device mounted on the mounting unit, a capacitance measuring circuit configured to measure a capacitance value of the actuator and a controller configured to acquire the capacitance value, compare the capacitance value to a predetermined threshold value, and determine whether to supply a first control signal to the driving circuit to drive the actuator of the liquid discharging device to discharge a liquid based on the comparison of the capacitance value to the predetermined threshold value.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Abstract: According to the present disclosure, a method of manufacturing a semiconductor device includes the steps of (a) preparing a lead frame including a switching element die pad, a control element die pad, and a third-side side rail portion, (b) mounting a switching element and a diode element on the switching element die pad and mounting a control element configured to control the switching element on the control element die pad, (c) sealing the switching element, the diode element, and the control element with a mold resin such that the power side terminal, the control side terminal, and a part of the third-side side rail portion protrude outward, and (d) forming a third-side side rail terminal by cutting the third-side side rail portion, the third-side side rail terminal extending from a part of the third-side side rail portion.