Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Abstract: The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.

Abstract: A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: Storage system arrangement wherein: when a transmission destination determines that a source-side serial number included in a received packet is the same as a current destination-side serial number in the transmission destination, the transmission destination processes a content of the received packet in accordance with a command included in the received packet; and when the transmission destination determines that the source-side serial number is not the same as the current destination-side serial number, the transmission destination does not process a content of the received packet.

Abstract: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.

Abstract: Deadlock is avoided in a grid storage system having superior scalability. Provided is a storage subsystem connected to a host computer for receiving a write or read access from the host computer. This storage subsystem includes a plurality of modules respectively having a storage resource, a switch for connecting the plurality of modules, a controller for controlling the transfer of a packet based on the write or read access from the host computer to a target module among the plurality of modules via the switch, and a memory storing a transfer rule of the packet. The controller controls the transfer of the packet based on the transfer rule.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Abstract: High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).

Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Abstract: The present invention obtains with high precision, in a storage system, the effect of additional installation or removal of cache memory, that is, the change of the cache hit rate and the performance of the storage system at that time. For achieving this, when executing normal cache control in the operational environment of the storage system, the cache hit rate when the cache memory capacity has changed is also obtained. Furthermore, with reference to the obtained cache hit rate, the peak performance of the storage system is obtained. Furthermore, with reference to the target performance, the cache memory and the number of disks and other resources that are additionally required are obtained.

Abstract: A storage system including a storage device which includes media for storing data from a host computer, a medium controller for controlling the media, a plurality of channel controllers for connecting to the host computer through a channel and a cache memory for temporarily storing data from the host computer, wherein the media have a restriction on a number of writing times. The storage device includes a bus for directly transferring data from the medium controller to the channel controller.

Abstract: A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.

Abstract: In order to efficiently utilize processor resources, a storage system according to this invention includes: a protocol processor; a processor; a local router; a first memory; and a disk drive. In the storage system, the protocol processor transmits, upon transmitting a frame to the host computer, information on a transmission state of the frame to the local router, and the local router determines, upon the protocol processor receiving a frame, which of the processors processes the received frame, based on which a subject the received frame requests for an access to, transfers the received frame to the determined processor, determines, upon the protocol processor transmitting a frame, which of the processors processes information on a transmission state of the frame, based on an exchange of the transmitted frame, and transfers the information on the transmission state of the frame to the determined processor.

Abstract: A gas barrier film having excellent gas barrier properties (e.g., barrier properties against water vapor), a production process of the film, and a device provided with the film are provided. A gas barrier film 10 having high gas barrier properties (e.g., barrier properties against water vapor) is obtainable by forming an anchor layer 12 on at least one side of a base film 11 and forming a barrier layer 13 on the anchor layer, wherein the anchor layer is formed from a cured product of a polymerizable composition containing at least a silicone (meth)acrylate monomer and/or prepolymer, and the barrier layer contains a metal or a metal compound.

Abstract: The first controller includes a first relay circuit which is a circuit that controls data transfer, and a first processor coupled to the first relay circuit via a first second path. The second controller includes a second relay circuit which is a circuit that controls data transfer, and is coupled to the first relay circuit via the first path, and a second processor coupled to the second relay circuit via a second second path. The first processor is coupled to the second relay circuit not via the first relay circuit but via a first third path, and accesses the second relay circuit via the first third path during an I/O process. The second processor is coupled to the first relay circuit not via the second relay circuit but via a second third path, and accesses the first relay circuit via the second third path during an I/O process.

Abstract: A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

Abstract: A fault-tolerant storage system is provided. The storage system is composed of a controller having a plurality of processors and other units. When an error occurs in any one of the components in the controller, the storage system cuts off an I/O path of the controller, specifies the failed component in the cutoff status, and invalidates the failed component. After invalidating the failed component, the storage system determines whether it is operable only with the normal components, cancels (releases) the cutoff of the I/O path when it determines that it is operable, and resumes operation by rebooting.

Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.