Abstract: A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: A key switch including a base section, a key top, a pair of link members and a switching mechanism. Each link member is provided, at one end region thereof, with a toothed portion meshable with a toothed portion of another link member in a gearing manner and a pivot axle pivotably joined to the base section, and at another end region, with a slide portion slidably engaged with the key top. The base section includes a support plate and a frame member, the frame member being fixedly attached to the upper surface of the support plate. The frame member is provided with a bearing portion pivotably receiving and supporting the pivot axle of each link member. The first end region of each link member is disposed on a lateral side of the frame member and closely to the upper surface of the support plate.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

Abstract: The disk controller has a plurality of channel control units, a plurality of cache memories, a plurality of disk control units, and a plurality of internal switch units. Each channel control unit or disk control unit sends to one of the cache memory units a request packet requesting execution of processing. The cache memory unit sends a response packet in response to the received request packet. Each internal switch unit monitors the request packet sent from the channel control unit or disk control unit, and judges whether or not the response packet to the request packet has passed through the internal switch unit within a first given time period since the passage of the request packet. In the case where the response packet has not passed through the internal switch unit within the first given time period, the internal switch unit sends a failure notification.

Abstract: An off-axis cut of a nonpolar III-nitride wafer towards a polar (?c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0° and 27°.

Abstract: A push button-type switch device includes a pair of fixed contacts, an operable member to be pushed, an actuating member elastically deformable upon the operable member being pushed, a movable contact which short-circuits the pair of fixed contacts due to elastic deformation of the actuating member, and a limiting part arranged to limit a direction in which the operable member moves and making the operable member move in a fixed orientation. The limiting part includes a pair of link members that engage with each other, one ends of the link members rotatably supported by the base portion, and the other ends thereof slidably supported by the operable member. This produces a good click irrespective of a position where the operable member is operated.

Abstract: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.

Abstract: A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 550° C., the temperature of the upper region of the high-pressure vessel is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

Abstract: In order to calculate the power of logically-partitioned areas without using a power meter in a storage system logically partitioning a storage area, there is provided a power estimating method in a computer system including a management computer and a storage system connected to the management computer and a host computer. The storage system prepares logical storage-volumes in a real area of plural disk drives. The power estimating method includes the steps of: allowing a third processor to calculate operation rates of the disk drives for access to the logical storage-volumes from operating times of the disk drives for access to the logical storage-volumes; and allowing the third processor to calculate power consumption increments of the disk drives for access to the logical storage-volumes by access types from incremental power consumption information and the calculated operation rates of the disk drives.

Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0<x<1 and 0?y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (11 02) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: This invention, in the interface coupled to the server, the disk interface coupled to the second memory to store final data, the cache to store data temporarily, and in the storage system with the MP which controls them, specifies the area by referring to the stored data, and makes the virtual memory area resident in the cache by using the storage system where the specified area is made resident in the cache.

Abstract: Proposed is a disk controller capable of notifying that a hard disk drive needs to be replaced even when the power of such hard disk drive is turned off. When a controller is to control the supply of electrical power to a disk in the respective disk units, the controller turns off a green LED and turns on a red LED when a disk in a disk group becomes a replacement target disk, turns off the power of the replacement target disk by opening a power switch corresponding to the respective replacement target disks, turns on the disk power source by closing the power switch when the replacement target disk is replaced with a new disk, and recognizes information concerning the new disk.

Abstract: A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract: This storage device performs deduplication of eliminating duplicated data by storing a logical address of one or more corresponding logical unit memory areas in a prescribed management information storage area of a physical unit memory area defined in the storage area provided by the flash memory chip, and executes a reclamation process of managing a use degree as the total number of the logical addresses used stored in the management information storage area and a duplication degree as the number of valid logical addresses corresponding to the physical unit memory area for each of the physical unit memory areas, and returning the physical unit memory area to an unused status when the difference of the use degree and the duplication degree exceeds a default value in the physical unit memory area.