Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Abstract: Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Abstract: A method for ammonothermally growing group-III nitride crystals using an initially off-oriented non-polar and/or semi-polar growth surface on a group-III nitride seed crystal. Group-III-containing source materials and group-III nitride seed crystals are placed into a vessel, wherein the seed crystals have one or more non-polar or semi-polar growth surfaces. Group-III nitride crystals are ammonothermally grown by filling the vessel with a nitrogen-containing solvent for dissolving the source materials and transporting a fluid comprised of the solvent with the dissolved source materials to the seed crystals for growth of the group-III nitride crystals on the seed crystals. The growth surfaces are initially off-oriented growth surfaces, wherein the growth surfaces are off-oriented m-plane or highly vicinal m-plane growth surfaces. The growth surfaces of the seed crystals may be created by cutting group-III nitride crystals at a desired angle with respect to an m-plane.

Abstract: This storage apparatus that provides to a host computer a logical device for storing data sent from the host computer includes a nonvolatile memory for storing the data, a disk-shaped memory device for storing the data, and a controller for controlling the nonvolatile memory and the disk-shaped memory device. The controller redundantly configures the logical device with the nonvolatile memory and the disk-shaped memory device.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers.

Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Abstract: An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.

Abstract: Provided is a storage system. The storage system includes: a hard disk drive, and a storage controller for reading/writing data from/to the hard disk drive, the storage controller including: at least one interface connected to a host computer through a network; and a plurality of processors connected to the interface through an internal network. The storage system is characterized in that: the processor provides at least one logical access port to the host computer; and the interface stores routing information including a processor which processes an access request addressed to the logical access port, extracts an address from the received access request upon reception of the access request from the host computer, specifies the processor which processes the received access request based on the routing information and the extracted address, and transfers the received access request to the specified processor.

Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Abstract: The present invention has an object to provide a method for efficiently producing a human T cell population which has both cytotoxic and immunosuppressive activities, and solves the above object by providing a method for producing a human T cell population which has both cytotoxic and immunosuppressive activities, comprising the following steps (1) to (4): (1) fractionating mononuclear cells collected from a human umbilical cord blood into CD14-positive (CD14+) cells and CD14-negative (CD14?) cells, and then fractionating the CD14-negative (CD14?) cells into CD2-positive CD14-negative (CD2+CD14?) cells, and CD2-negative CD14-negative (CD2?CD14?) cells; (2) co-culturing the CD2-positive CD14-negative (CD2+CD14?) cells obtained in step (1) with stromal cells to generate blast cells; (3) adding the blast cells obtained in step (2) to the co-culture of the CD14-positive (CD14+) cells obtained in step (1) with stromal cells to allow the blast cells to proliferate; and (4) allowing the blast cells obtained in step

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract: A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.

Abstract: The present invention provides means for effectively reducing the amount of data by means of de-duplication in a disk array apparatus having a data guarantee code. A control means for the disk array apparatus that adds a data guarantee code to each logical data block and checks the data guarantee code when reading data has a de-duplication performing function and control means for: generating LA substitution information for a function checking the data guarantee code or read data location address substitution information when performing the de-duplication and storing data; performing the de-duplication using the above-mentioned information when reading data; and thereby avoiding false diagnosis of the data guarantee code check.

Abstract: A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.

Abstract: A storage system for storing data includes: a plurality of storage devices; a controller device; a plurality of expanders; and a path adjusting unit. The path adjusting unit includes: a target specifying unit, a destination selecting unit; and a data migrating unit. The target specifying unit specifies target data to be targeted for adjustment in the plurality of storage devices. The destination selecting unit selects a storage device in which to store the specified target data to reduce the number of expanders on a data transfer pathway for the specified target data. The data migrating unit migrates the specified target data to the selected storage device.

Abstract: A purpose of the invention is to immediately return the operation in a flash memory module from low power consumption mode to regular mode. A flash memory controller having memory that stores an address translation table for translating between a logical page address and a physical page address in the flash memory chip controls regular mode and low power consumption mode of operating at lower power consumption than in regular mode by halting operation, or decreasing power supply voltage or lowering operating frequency. A flash memory module having the flash memory controller verifies data in the address translation table while low power consumption mode is set.