Abstract: Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

Abstract: A chip on film package includes a flexible base film having a first surface and a second surface opposite to each other that includes at least one through hole therein, a plurality of wirings disposed on the first surface and the second surface of the base film, respectively, that include a first lead and a second lead connected to each other through the at least one through hole, and a display panel driving chip and a touch panel sensor chip, each mounted on any one of the first surface and the second surface of the base film, wherein at least one of the display panel driving panel and the touch panel sensor chip is electrically connected to the first and second leads.

Abstract: Provided is a body-implantable package for processing biosensed-data for wireless communication to an external device. The package includes a tube closed by a cover, therein, a chip with a strained layer affixed thereto to form a flexible laminar circuit. The cover is fitted over an open end of the tube after the laminated chip and strained layer are inserted therein. The chip is constructed of and rolled in one or more turns into a generally cylindrical shape. The strained layer is affixed to a surface of the chip automatically to cause the flexible laminar circuit to curl into a generally cylindrical shape to fit within the tube.

Abstract: Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

Abstract: A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines through corresponding interconnections. Alternate memory cell strings can be coupled to different bitlines through corresponding different interconnections.

Abstract: Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

Abstract: Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

Abstract: A tape wiring substrate includes a base film having at least one recess in a first surface of the base film and a chip-mounting region on which a semiconductor chip is included on a second surface of the base film. A wiring pattern is formed on the second surface of the base film and is extended to an edge of the chip-mounting region. A protection film covers the wiring pattern.

Abstract: An apparatus for allocating a broadcasting channel in each cell determines a position to which the broadcasting channel is to be allocated using a number of cell IDs and a cell ID of each cell which is allocated different from neighboring cells in a subframe of a downlink frame, and allocates the broadcasting channel to the determined position.

Abstract: A COF substrate may include a base film, first upper conductive patterns, at least one second upper conductive pattern and lower conductive patterns. The first upper conductive patterns may be arranged on an upper surface of the base film. Each of the first upper conductive patterns may have an inner pattern and an outer pattern spaced apart from each other. The second upper conductive pattern may be arranged on the upper surface of the base film between the first upper conductive patterns. The lower conductive patterns may be arranged on a lower surface of the base film. The lower conductive patterns may be electrically connected between the inner pattern and the outer pattern. Thus, conductive materials causing a short between the panel patterns may not exist between the inner pattern and the outer pattern on the upper surface of the base film.

Abstract: A semiconductor memory device includes a stack of word lines and insulating patterns. Cell pillars extend vertically through the stack of word lines and insulating patterns with memory cells being formed at the junctions of the cell pillars and the word lines. A ratio of the thickness of the word lines to the thickness of immediately neighboring insulating patterns is different at different locations along one or more of the cell pillars. Related methods of manufacturing and systems are also disclosed.

Abstract: Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

Abstract: A semiconductor chip for a TAB package includes a surface including a set of input pads connected to internal circuitry of the chip and for receiving external signals The surface includes output pads. A plurality of input pads are adjacent a first edge and are in a first row substantially parallel to the first edge and extending in a first direction; a plurality of first output pads are adjacent a second edge, and are in a second row substantially parallel to the second edge and extending in the first direction; and a plurality of second output pads are located between the first row and the second row. The plurality of second output pads include first and second outermost pads located a certain distance from a respective third edge and fourth edge, and first and second inner pads located a greater distance from the respective third edge and fourth edge.

Abstract: Provided are a multi-gate transistor device and a method for fabricating the same. The method for fabricating the multi-gate transistor device includes forming first and second fins shaped to protrude on a substrate and aligned and extending in a first direction and a trench separating the first and second fins from each other in the first direction between the first and second fins, performing ion implantation of impurities on sidewalls of the trench, forming a field dielectric film filling the trench, forming a recess in the first fin not exposing the field dielectric film, and growing an epitaxial layer in the recess.

Abstract: A semiconductor device may include gate structures spaced apart above a top surface of a substrate. The gate structures may include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation insulating layer may be disposed between the gate structures. A plurality of cell pillars may penetrate the horizontal electrode and connect to the substrate. The plurality of cell pillars may include a minimum spacing defined by a shortest distance between any two of the plurality of cell pillars. The thickness of the horizontal electrode may be greater than the minimum spacing of the cell pillars.

Abstract: Provided are a chip-on-film (COF) package and a device assembly including the same. The device assembly includes a COF package including a film substrate on which a plurality of film-through wires are formed. The device assembly includes a panel unit including a panel substrate on which a plurality of panel-through wires are formed. The panel unit is disposed on the COF package. One end of the panel unit is electrically connected to a first end of the COF package. The device assembly includes a control unit disposed below the panel unit. One end of the control unit is electrically connected to a second end of the COF package.

Abstract: A method for transmitting machine type communication (MTC) data and an apparatus therefor are disclosed. A method for transmitting data in a MTC device located in a mobile communication system may comprise estimating an absolute position of the MTC device, receiving an awake message, extracting downlink synchronization information and absolute positional information of a base station included in the awake message, estimating a transmission delay time between the MTC device and the base station, and transmitting signal to the base station based on the transmission delay time and the downlink synchronization information. Therefore, a problem of uplink interferences between terminals and a base station due to a MTC device, which can be generated in supporting MTC services for a conventional cellular communication system, may be resolved.

Abstract: A chip on film package includes a flexible base film having a first surface and a second surface opposite to each other that includes at least one through hole therein, a plurality of wirings disposed on the first surface and the second surface of the base film, respectively, that include a first lead and a second lead connected to each other through the at least one through hole, and a display panel driving chip and a touch panel sensor chip, each mounted on any one of the first surface and the second surface of the base film, wherein at least one of the display panel driving panel and the touch panel sensor chip is electrically connected to the first and second leads.

Abstract: A semiconductor package may include a substrate, a semiconductor chip disposed on the substrate, a communication terminal and a static electricity inducing terminal connected to a ground. The package may include a first sealant that comprises a voltage sensitive material and that covers the semiconductor chip and a static electricity blocking layer that provides a conductive pathway from the first sealant to only the static electric inducing terminal. The static electricity blocking layer may prevent the communication terminal from being electrically connected to the first sealant. If a buildup of charge is applied to the device, the first sealant may become polarized and/or conductive. The extra voltage may travel through the first sealant to the static electricity inducing terminal via an opening in the static electricity blocking layer. The semiconductor chip and the communication terminal may not be affected by the extra charge.

Abstract: Step shape pad structure and wiring structure in vertical type semiconductor device are include a first conductive line having a first line shape and including first pad regions at an upper surface of an edge portion, and a second conductive line having s second line shape and being spaced apart from the first conductive line and provided on the first conductive line. An end portion of the first conductive line is extended to a first position. Second pad regions are included on an upper surface of an edge portion of the second conductive line. An end portion of the second conductive line is extended to the first position. The second conductive line includes a dent portion at a facing portion to the first pad regions in a vertical direction to expose the first pad regions. The pad structure may be used in a vertical type nonvolatile memory device.