Abstract: A non-oriented electrical steel sheet according to an exemplary embodiment of the present invention includes, by weight %, Si: 2.5 to 6.0%, Al: 0.2 to 3.5%, Mn: 0.2 to 4.5%, Cr: 0.01 to 0.2%, P: 0.005 to 0.08%, Mg: 0.0005 to 0.05%, and a remainder including Fe and inevitable impurities, while satisfying Equation 1 below, and formed with an inner oxidation layer of a 0.2 to 5 ?m thickness inside a base steel sheet. ?2.5?[P]/[Cr]?[Mg]×100?6.5??[Equation 1] (In Equation 1, [P], [Cr], and [Mg] respectively represent a content (by wt %) of P, Cr, and Mg.

Abstract: The present disclosure provides a sealing apparatus for use in a hypertube, which includes a first tube, a second tube having one end connected to an end of the first tube, and a gasket including a seal made of a fiber structure formed with a space that is filled with a sealing fluid, wherein the gasket is configured to seal a space between the first tube and the second tube.

Abstract: Provided is a hypertube transport system. Specifically, provided are a magnetically-levitated train and an infrastructure-system in which same travels, comprising: refrigerant for cooling compressed air of a hypertube train, and a compressed air cooling system utilizing the refrigerant; an apparatus and method for controlling trains operating in a vacuum tube; superconducting switches for superconducting magnets for magnetic levitation; a driving stability apparatus for the hypertube transport system; a control apparatus for trains of the hypertube transport system; and an energy harvester.

Abstract: Power management apparatuses are provided. A power management apparatus includes a secondary power device that includes at least one capacitor. The power management apparatus includes a charging circuit that includes a direct current (DC)-DC converter and that is configured to supply power to the secondary power device. Moreover, the power management apparatus includes a measuring circuit that is configured to measure a switching profile of the DC-DC converter, and to determine a state of the secondary power device by comparing at least one time period of the switching profile with a reference time. Related memory systems and methods of operation are also provided.

Abstract: A method of manufacturing a non-oriented electrical steel sheet is disclosed. A method of manufacturing a non-oriented electrical steel sheet according to the present invention includes reheating slab consisting of Si: 2.0-4.0%, acid-soluble Al: 0.01-0.04%, Mn: 0.20% or less, Sb: 0.005-0.10%, N: 0.005% or less, S:0.005% or less, C: 0.005-0.015%, Fe in a balance amount, and other inevitable impurities in weight percent (wt %); hot rolling the slab to prepare a hot rolled steel sheet; cold rolling the hot rolled steel sheet to prepare a cold rolled steel sheet; primarily recrystallization-annealing the cold rolled steel sheet; and high-temperature annealing the cold rolled steel sheet subjected to the primarily recrystallization-annealing.

Abstract: The data collecting method includes: collecting first and second sensor data respectively through a first and a second sensors while a data collecting apparatus moves within a target area, and tagging a first and a second timestamp values respectively to the first and the second sensor data; generating map data of the target area and location data at a point of time corresponding to the first timestamp value, based on the first sensor data; generating map information of the target area based on the map data, and generating moving path information on the map based on the location data; and estimating a sensing location at a point of time corresponding to the second timestamp value based on the moving path information, and tagging the sensing location to the second sensor data.

Abstract: A non-oriented electrical steel sheet according to an embodiment of the present invention, comprises: Si: 2.0 to 3.5%, Al: 0.05 to 2.0%, Mn: 0.05 to 2.0%, In: 0.0002 to 0.003% by wt % and Fe and inevitable impurities as the remainder.

Abstract: A non-oriented electrical steel sheet according to an embodiment of the present invention may include, by weight, by weight, 2.0 to 3.5% of Si, 0.3 to 2.5% of Al, 0.3 to 2.5% of Mn, individually or in a total amount of 0.0005 to 0.03% of at least one of Ga and Ge, and the remainder including Fe and impurities, and may satisfy the following Formula 1. 0.2?([Si]+[Al]+0.5×[Mn])/(([Ga]+[Ge])×1000)?5.27 ??[Formula 1] ([Si], [Al], [Mn], [Ga] and [Ge] represent the content (% by weight) of Si, Al, Mn, Ga and Ge, respectively.

Abstract: The present disclosure relates to an apparatus embodied in order to correct efficiently changing of measured temperature value in a temperature sensor according to influence of irradiance. A radiosonde related an exemplary embodiment of the present disclosure includes a first temperature sensor; a second temperature sensor having higher emission ratio than the first temperature sensor; and a measuring unit in order to calculate corrected temperature value, but the radiosonde and the third temperature sensor are installed in a chamber before flying of the radiosonde, a first temperature change detected by the first temperature sensor by output light in a sunlight simulator and a second temperature change detected by the second temperature sensor are induces, compensation factors may be derived using the first temperature change, the second temperature change, and temperature value measured by the third temperature sensor.

Abstract: Provided is a medication dispenser configured to discharge a liquid state medication stored therein by a pumping operation in a predetermined amount in a drop state and prevent a noise occurrence during medication discharge, and having a bacteria infiltration prevention function, wherein a flow path member and a second check valve are mounted in a liner, the second check valve is composed of a hemispherical cylinder mounted in an elevation space of the liner, having an open upper part, and of which a diameter decreases toward a lower end and includes a variable part in which the hemispherical cylinder is vertically variable and an opening and closing protrusion configured to perform supply and blocking of a flow path.

Abstract: An electronic device and a method for suggesting a response manual in the occurrence of a denial are provided. The electronic device and the method, according to various embodiments, are capable of: recognizing a policy violation occurring due to an access which does not match a pre-stored security policy; recording, as an access refusal log, information on the policy violation including information of the subject of the access or information of the object of the access, when the access corresponding to the policy violation is not permitted; and notifying a message representing the policy violation via a user interface, in response to the access refusal log. In addition, other embodiments are available.

Abstract: The present invention relates to a microcontainer microstructure including a microcontainer film structure having a sharp tip portion and a method of manufacturing the same.

Abstract: A water purifier comprising: a filter unit comprising at least one filter filtering water to generate purified water; a flow rate sensor measuring a flow rate of the water; a concentrated water channel discharging concentrated water, having been filtered by the filter unit; an extraction unit extracting the purified water; a flow rate control valve controlling a flow rate of purified water; an opening and closing degree measurement unit, measuring a degree of opening and closing of the flow rate control valve; a concentrated water ratio calculation unit, calculating a ratio between purified water and concentrated water, according to the degree of opening and closing of the flow rate control valve; and a controller, using the flow rate of water and the calculated ratio between purified water and concentrated water, to calculate amounts of water used, integrating the calculated amounts of water, and calculating a lifespan of the filter.

Abstract: A storage device includes nonvolatile memory devices that store data, a storage controller, and an adaptive power supply circuit. The storage controller controls the nonvolatile memory devices. The adaptive power supply circuit generates at least one operation voltage based on at least one power supply voltage, and provides the at least one operation voltage to the nonvolatile memory devices and the storage controller. The at least one power supply voltage is provided to the adaptive power supply circuit through a portion of power lines connected to a host. Under control of the storage controller, the adaptive power supply circuit adaptively activates a power disable function associated with a provision of the at least one operation voltage according to a level of a third power supply voltage provided through a third power line of the plurality of power lines. The third power supply voltage is provided by the host.

Abstract: Power management apparatuses are provided. A power management apparatus includes a secondary power device that includes at least one capacitor. The power management apparatus includes a charging circuit that includes a direct current (DC)-DC converter and that is configured to supply power to the secondary power device. Moreover, the power management apparatus includes a measuring circuit that is configured to measure a switching profile of the DC-DC converter, and to determine a state of the secondary power device by comparing at least one time period of the switching profile with a reference time. Related memory systems and methods of operation are also provided.

Abstract: A memory device comprises a memory cell array including a first memory cell disposed on a substrate and a second memory cell above the first memory cell; a first word line connected to the first memory cell and a second word line connected to the second memory cell, the second word line disposed above the first word line; and a word line defect detection circuit configured to monitor a number of pulses of a pumping clock signal while applying a first voltage to the first word line to detect a defect of the first word line. The voltage generator is configured to apply a second voltage different from the first voltage to the second word line for programming the second memory cell when the number of pulses of the pumping clock signal is smaller than a reference value.

Abstract: The present invention relates to a method for manufacturing a microstructure, the method comprising the steps of: (a) preparing a viscous composition on a lower substrate; and (b) applying centrifugal force to the viscous composition to induce extension of the viscous composition, thereby manufacturing a microstructure. According to the present invention, (i) a microstructure having a micro-unit diameter and sufficient effective length and hardness is provided; (ii) any process that may destroy activation of a drug or cosmetic component, such as high-temperature treatment, organic solvent treatment, etc., is avoided; (iii) loss resulting from contact and separation is reduced; (iv) the limitation of aspect ratio of the manufactured microstructure is overcome; (v) the limitation of yield resulting from flatness is overcome; and (vi) microstructures of various shapes can be manufactured.

Abstract: A non-directional electrical steel sheet according to an embodiment of the present disclosure includes, in wt %, 2.5 to 3.3 wt % of Si, 0.05 to 1 wt % of Al, 0.05 to 1 wt % of Mn, 0.01 wt % or less of (not including 0 wt %) S, 0.005 wt % or less of (not including 0 wt %) N, 0.005 wt % or less of (not including 0 wt %) C, 0.005 wt % or less of (not including 0 wt %) Ti, 0.005 wt % or less of (not including 0 wt %) 0.001 to 0.1 wt % of P, 0.001 to 0.1 wt % of Sn, and 0.001 to 0.1 wt % of Sb, with the remainder being Fe and unavoidable impurities, and satisfies Formulas 1 to 3 below. 1.7?[Si]([Al]+[Mn])?2.9 ??[Formula 1] 50?13.25+11.3*([Si]+[Al][Mn]/2)?60 ??[Formula 2] 0.025?[P]+[Sn]+[Sb]?0.15 ??[Formula 3] (In Formulas 1 to 3, [Si], [Al], [Mn], [P], [Sn], and [Sb] represent the content (in wt %) of Si, Al, Mn, P, Sn, and Sb, respectively).

Abstract: The present disclosure relates to an Fe—Ni—P alloy multilayered steel sheet and a method of manufacturing the same. Provided is an Fe—Ni—P alloy multilayered steel sheet including: an Fe—Ni alloy layer including 30 wt % to 85 wt % of Ni, a remainder Fe, and other inevitable impurities, with respect to 100 wt % as a whole; and an Fe—P alloy layer including 6 wt % to 12 wt % of P, a remainder Fe, and other inevitable impurities, with respect to 100 wt % as a whole, in which the Fe—Ni alloy layer and the Fe—P alloy layer are alternately laminated on each other several times.

Abstract: A non-oriented electric steel sheet according to an embodiment of the present disclosure includes 2.5 wt % to 3.1 wt % of Si, 0.1 wt % to 1.3 wt % of Al, 0.2 wt % to 1.5 wt % of Mn, 0.008 wt % or less of C (excluding 0 wt %), 0.005 wt % or less of S (excluding 0 wt %), 0.005 wt % or less of N (excluding 0 wt %), 0.005 wt % or less of Ti (excluding 0 wt %), 0.001 wt % to 0.07 wt % of Mo, 0.001 wt % to 0.07 wt % of P, 0.001 wt % to 0.07 wt % of Sn, and 0.001 wt % to 0.07 wt % of Sb, in which a remainder includes Fe and inevitable impurities, an average crystal grain diameter is 70 ?m to 150 ?m, the non-oriented electric steel sheet satisfies Equations (1) and (2), 0.32?([Al]+[Mn])/[Si]?0.5?? [Equation 1] 0.025?[Mo]+[P]+[Sn]+[Sb]?0.15?? [Equation 2] (here, [Si], [Al], [Mn], [Mo], [P], [Sn], and [Sb] denote the contents (wt %) of Si, Al, Mn, Mo, P, Sn, and Sb).