Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.

Abstract: An image sensor may include phase detecting and autofocusing (PDAF) pixels. Each pixel may include an inner photodiode region and outer photodiode regions to provide high dynamic range (HDR) capability. Each pixel may include an in infrared blocking filter that selectively covers the inner photodiode region or the outer photodiode regions. Two pixels of the same color but with different infrared blocking filter patterns may be compared to provide infrared sensing. Any color filter array configuration can be used. Instead of an infrared blocking filter, an infrared pass filter may also be used. A first pixel may include an infrared pass filter that selectively covers the inner photodiode region, whereas a second pixel may include an infrared pass filter that selectively covers the outer photodiode regions. The charge collected by the first and second pixels may be compared to provide infrared sensing.

Abstract: An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

Abstract: An image sensor may include optically black pixels for obtaining dark current measurements. The image sensor may include dummy pixels between the active pixel array and the optically black pixels. Light incident upon the dummy pixels may be redirected to the optically black pixels, causing inaccurate dark current measurements. Light-blocking structures may be provided in the dummy pixels to prevent light from reaching the optically black pixels. A grid of openings may be formed in the active pixel array and the dummy pixel area. The grid may be filled with color filters in the active area and light-blocking elements in the dummy pixel area. The dummy pixel area may include a single opening in the grid in which a single light-blocking element that covers multiple dummy pixel photodiodes is formed. Light-blocking structures in the dummy pixel area may extend over the optically black pixels.

Abstract: Imaging systems may include fluidic color filter elements to increase the flexibility of the system. An imaging system may include a number of fluid reservoirs with different color filter element fluids. The imaging sensor may include a number of separated color filter chambers. Fluids from the fluid reservoirs may be directed to specific color filter chambers as desired, with the option to change the color filter fluid in a chamber to a different color filer fluid at any time. To move the fluids to and from the fluid reservoirs to the color filter chambers, electrowetting may be used. The color filter chambers may be interposed between a ground electrode and a number of patterned electrodes. Voltages may be applied to the patterned electrodes to move the fluid to desired positions within the chambers.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for an image sensor. The image sensor may comprise a color filter with a convex surface and a corresponding underlying dielectric element. The convex surface of the color filter is parallel to a convex surface of the dielectric element, wherein the convex shape of the color filter is substantially equal to the convex shape of the dielectric element.

Abstract: An image sensor may have a pixel array, and the pixel array may include a plurality of image pixels that gather image data and a plurality of phase detection pixels that gather phase information. The phase detection pixels may be arranged in phase detection pixel blocks, and each phase detection pixel group may include edge pixels. The edge pixels of each phase detection pixel group may be covered by microlenses that also cover a portion of a center pixel. The pixel array may also include high dynamic range pixel blocks. Each high dynamic range pixel block may include pixels within the phase detection pixel block and other pixels (e.g., corner pixels). A subset of the plurality of image pixels in the pixel array may be arranged in pixel blocks. Each pixel block may include a phase detection pixel block and a high dynamic range pixel block.

Abstract: Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.

Abstract: An image sensor may include an infrared radiation-blocking layer. The infrared radiation-blocking layer may block infrared radiation from reflecting off of metal layers formed beneath pixel structures in the image sensor so that the reflected light does not reach the photodiodes. The infrared radiation-blocking layer may be formed between a backside redistribution layer and an epitaxial silicon layer in which pixel structures such as photodiodes and transistors are formed. The infrared radiation-blocking layer may be formed from a pre-existing metal layer between the backside redistribution layer and the epitaxial silicon layer. The infrared radiation-blocking layer may prevent the image sensor from generating inadvertent photocurrents in response to reflected infrared light.

Abstract: Imaging systems may include fluidic color filter elements to increase the flexibility of the system. An imaging system may include a number of fluid reservoirs with different color filter element fluids. The imaging sensor may include a number of separated color filter chambers. Fluids from the fluid reservoirs may be directed to specific color filter chambers as desired, with the option to change the color filter fluid in a chamber to a different color filer fluid at any time. To move the fluids to and from the fluid reservoirs to the color filter chambers, electrowetting may be used. The color filter chambers may be interposed between a ground electrode and a number of patterned electrodes. Voltages may be applied to the patterned electrodes to move the fluid to desired positions within the chambers.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor may include an infrared radiation-blocking layer. The infrared radiation-blocking layer may block infrared radiation from reflecting off of metal layers formed beneath pixel structures in the image sensor so that the reflected light does not reach the photodiodes. The infrared radiation-blocking layer may be formed between a backside redistribution layer and an epitaxial silicon layer in which pixel structures such as photodiodes and transistors are formed. The infrared radiation-blocking layer may be formed from a pre-existing metal layer between the backside redistribution layer and the epitaxial silicon layer. The infrared radiation-blocking layer may prevent the image sensor from generating inadvertent photocurrents in response to reflected infrared light.

Abstract: An image sensor with an array of pixels is provided. The array may include a semiconductor substrate having opposing first and second sides. A first photodiode region may be implanted in the semiconductor substrate through the first side. A second photodiode region may be implanted in the semiconductor substrate through the second side. The second photodiode region may be implanted to overlap with the first photodiode region in the semiconductor substrate to form a continuous photodiode region that extends from the first side to the second side of the substrate. The continuous region may generate charge in response to image light. The continuous region may belong to a single pixel that generates an image signal from the charge. The image signal may be conveyed to readout circuitry via metallization layers formed over the substrate. The first and second photodiode regions may be thermally activated prior to forming the metallization layers.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for an image sensor with a thermal equalizer for distributing heat. The method and apparatus may comprise a thermal equalizer disposed between a sensor die and a circuit die to prevent uneven heating of the pixels in the sensor die. The method and apparatus may comprise a thermal equalizer integrated within the circuit die.

Abstract: Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.

Abstract: An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.

Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.