Abstract: Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.

Abstract: An image sensor may have a pixel array, and the pixel array may include a plurality of image pixels that gather image data and a plurality of phase detection pixels that gather phase information. The phase detection pixels may be arranged in phase detection pixel blocks, and each phase detection pixel group may include edge pixels. The edge pixels of each phase detection pixel group may be covered by microlenses that also cover a portion of a center pixel. The pixel array may also include high dynamic range pixel blocks. Each high dynamic range pixel block may include pixels within the phase detection pixel block and other pixels (e.g., corner pixels). A subset of the plurality of image pixels in the pixel array may be arranged in pixel blocks. Each pixel block may include a phase detection pixel block and a high dynamic range pixel block.

Abstract: An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.

Abstract: An imaging system may include an image sensor that may be a backside illuminated (BSI) image sensor. The BSI sensor may be bonded to an inactive silicon substrate or bonded to an active silicon substrate like a digital signal processor (DSP). Through-oxide vias (TOVs) may be formed in the image sensor die. A bond pad region may be formed on a light shielding layer to facilitate coupling the light shield to a ground source or other power sources. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. The light shielding layer may also be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously.

Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.

Abstract: An imaging system may include a first image sensor die stacked on top of a second image sensor die. A pixel array may include first pixels having photodiodes in the first image sensor die and second pixels having photodiodes in the second image sensor die. The first pixels may be optimized to detect a first type of electromagnetic radiation (e.g., visible light), whereas the second pixels may be optimized to detect a second type of electromagnetic radiation (e.g., infrared light). Light guide channels may be formed in the first image sensor die to help guide incident light to the photodiodes in the second image sensor substrate. The first and second image sensor dies may be bonded at a wafer level. A first image sensor wafer may be a backside illumination image sensor wafer and a second image sensor wafer may be a front or backside illumination image sensor wafer.

Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.

Abstract: An image sensor with an array of pixels is provided. The array may include a semiconductor substrate having opposing first and second sides. A first photodiode region may be implanted in the semiconductor substrate through the first side. A second photodiode region may be implanted in the semiconductor substrate through the second side. The second photodiode region may be implanted to overlap with the first photodiode region in the semiconductor substrate to form a continuous photodiode region that extends from the first side to the second side of the substrate. The continuous region may generate charge in response to image light. The continuous region may belong to a single pixel that generates an image signal from the charge. The image signal may be conveyed to readout circuitry via metallization layers formed over the substrate. The first and second photodiode regions may be thermally activated prior to forming the metallization layers.

Abstract: Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.

Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.

Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.

Abstract: An imaging system may include an image sensor having an array of image pixels with a photosensitive region that generates image signals in response to light. The array may include photoluminescent material that absorbs light of a first range of wavelengths and emits light of a second range of wavelengths onto the photosensitive region. The first range of wavelengths may correspond to ultraviolet light, and the second range of wavelengths may correspond to visible light. The photoluminescent material may be formed over some or all of the image pixels. The array may include color filter elements that transmit light of a given color to the photosensitive region. The photoluminescent material may be adjusted to have a peak emission intensity at a color of light that corresponds to the given color of light transmitted by a given color filter element.

Abstract: An image sensor die may include a pixel array formed in an image sensor substrate and covered by a transparent cover layer. The transparent cover layer may be attached to the image sensor substrate using adhesive. Electrical interconnect structures such as conductive vias may be formed in the transparent cover layer and may be used in conveying electrical signals between the image sensor and a printed circuit board. The conductive vias may have one end coupled to a bond pad on the upper surface of the transparent cover layer and an opposing end coupled to a bond pad on the upper surface of the image sensor substrate. The conductive vias may pass through openings that extend through the transparent cover layer and the adhesive. Conductive structures such as wire bonds, stud bumps, or solder balls may be coupled to the bond pads on the surface of the transparent cover layer.

Abstract: An image sensor. Implementations may include: a first die including a plurality of pixels; a second die including a plurality of transistors, capacitors, or both transistors and capacitors; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, capacitors or transistors and capacitors of the second die may be adapted to enable operation of the plurality of pixels of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.

Abstract: An image sensor. Implementations may include: a first die including a plurality of pixels; a second die including a plurality of transistors, capacitors, or both transistors and capacitors; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, capacitors or transistors and capacitors of the second die may be adapted to enable operation of the plurality of pixels of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.

Abstract: An imaging system may include an image sensor having an array of image pixels with a photosensitive region that generates image signals in response to light. The array may include photoluminescent material that absorbs light of a first range of wavelengths and emits light of a second range of wavelengths onto the photosensitive region. The first range of wavelengths may correspond to ultraviolet light, and the second range of wavelengths may correspond to visible light. The photoluminescent material may be formed over some or all of the image pixels. The array may include color filter elements that transmit light of a given color to the photosensitive region. The photoluminescent material may be adjusted to have a peak emission intensity at a color of light that corresponds to the given color of light transmitted by a given color filter element.