Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

Abstract: An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

Abstract: An imaging system may include an image sensor that may be a backside illuminated (BSI) image sensor. The BSI sensor may be bonded to an inactive silicon substrate or bonded to an active silicon substrate like a digital signal processor (DSP). Through-oxide vias (TOVs) may be formed in the image sensor die. A bond pad region may be formed on a light shielding layer to facilitate coupling the light shield to a ground source or other power sources. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. The light shielding layer may also be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously.

Abstract: A system may include an image sensor having a pixel array that receives light in an environment. The light received at the pixel array may be transmitted by an external device that encodes information using the wavelength, spatial patterning, temporal patterning, or other characteristics of the light. In response to receiving the light, the pixel array may generate electrical signals that are processed to decode the information in the light. The system may compare the decoded information to user preferences to determine if the information is relevant to a user. In response to determining that the information is relevant to the user, the system may display the information to the user, transmit a pulse including user preference information, or change an operating state of the image sensor.

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract: A system may include an image sensor having a pixel array that receives light in an environment. The light received at the pixel array may be transmitted by an external device that encodes information using the wavelength, spatial patterning, temporal patterning, or other characteristics of the light. In response to receiving the light, the pixel array may generate electrical signals that are processed to decode the information in the light. The system may compare the decoded information to user preferences to determine if the information is relevant to a user. In response to determining that the information is relevant to the user, the system may display the information to the user, transmit a pulse including user preference information, or change an operating state of the image sensor.

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. Light shielding structures may be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously. The formation of the color filter housing structures may also be integrated the formation of the TOVs.

Abstract: An imaging system may include one or more optical filters that include metallic nanoparticles in a matrix. The metallic nanoparticle optical filters may form a color filter array for an imager in the imaging system. Different metallic nanoparticle optical filters may be formed for each desired color. Properties of the metallic nanoparticles and matrices may be varied to achieve the desired optical filtering properties and pass the desired wavelength bands to the imager. As examples, the type of metal, the size of the nanoparticles, the shape of the nanoparticles, and the type of matrix in which the nanoparticles are formed may all influence the optical properties of the resulting metallic nanoparticle optical film.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Bond pad structures may be formed on the surface of the image sensor die and may be coupled to off-chip circuitry via bonding wires soldered to the bad pad structures. Color filter elements may be formed over active image sensor pixels on the image sensor die. Microlens structures may be formed over the color filter elements. An antireflective coating (ARC) liner may be simultaneously formed over the microlens structures and over the bond pad structures to passivate the bond pad structures.

Abstract: Devices and methods for protecting the metal within a via in a semiconductor substrate from corrosion are provided. Specifically, embodiments of the present invention relate to disposing a corrosion resistant metal layer within a recess formed in a semiconductor substrate such that the metal subsequently deposited within the via will adhere to the corrosion resistant metal layer, then backgrinding the bottom surface of the semiconductor substrate to expose the corrosion resistant metal. For example, the metal deposited within the recess may be copper, while the corrosion resistant metal may be a noble metal such as palladium.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.

Abstract: An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.

Abstract: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.

Abstract: An imaging system such as an array camera may include an array of image sensors. The image sensors may each include an array of image pixels formed in a common image sensor substrate. A protective glass cover layer may be provided over the array of image sensors. The cover layer may be attached to the image sensor substrate using an adhesive. The adhesive may be formed on the image sensor substrate in a grid-like pattern in between adjacent image sensors in the array. A light blocking material may be formed on the adhesive grid to minimize optical crosstalk between neighboring image sensors. The light blocking material may fill or partially fill a trench in the adhesive, may coat the outer surfaces of the adhesive, and/or may coat the inner surfaces of the adhesive. If desired, light barriers may also be formed in openings in the glass cover layer.

Abstract: An imaging system may include one or more optical filters that include metallic nanoparticles in a matrix. The metallic nanoparticle optical filters may form a color filter array for an imager in the imaging system. Different metallic nanoparticle optical filters may be formed for each desired color. Properties of the metallic nanoparticles and matrices may be varied to achieve the desired optical filtering properties and pass the desired wavelength bands to the imager. As examples, the type of metal, the size of the nanoparticles, the shape of the nanoparticles, and the type of matrix in which the nanoparticles are formed may all influence the optical properties of the resulting metallic nanoparticle optical film.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Bond pad structures may be formed on the surface of the image sensor die and may be coupled to off-chip circuitry via bonding wires soldered to the bad pad structures. Color filter elements may be formed over active image sensor pixels on the image sensor die. Microlens structures may be formed over the color filter elements. An antireflective coating (ARC) liner may be simultaneously formed over the microlens structures and over the bond pad structures to passivate the bond pad structures.

Abstract: An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. Light shielding structures may be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously. The formation of the color filter housing structures may also be integrated the formation of the TOVs.