Patents by Inventor Tadahiro Ohmi

Tadahiro Ohmi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150225593
    Abstract: Method for increasing the smoothness of the free surface area of a PFA film, provided on a component by sequentially exposing it to a temperature higher than its melting temperature so as to melt at least the free surface area, lowering the temperature to solidify the melted portion, remelting the free surface area by exposing it to a temperature of at least the PFA melting temperature and again lowering the temperature. The PFA film may be provided on Al2O3, Ni or NiF2 film.
    Type: Application
    Filed: March 4, 2015
    Publication date: August 13, 2015
    Applicant: TOHOKU UNIVERSITY
    Inventors: Masamichi Iwaki, Tadahiro Ohmi, Kenji Ohyama, Isao Akutsu
  • Patent number: 9105450
    Abstract: A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: August 11, 2015
    Assignees: TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Masaki Hirayama, Tadahiro Ohmi
  • Patent number: 9095039
    Abstract: A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatus 10 includes a vacuum chamber 100 having therein a mounting table 115 configured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguide 225 through which a high frequency power for exciting plasma is supplied into the vacuum chamber 100; a waveguide path 205, connected to the first coaxial waveguide 225, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: July 28, 2015
    Assignees: TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Masaki Hirayama, Tadahiro Ohmi
  • Publication number: 20150160662
    Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 11, 2015
    Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Patent number: 9010369
    Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: April 21, 2015
    Assignees: Fujikin Incorporated, National University Corporation Tohoku University, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Patent number: 8999788
    Abstract: Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: April 7, 2015
    Assignees: Tohoku University, Furukawa Electric Co., Ltd.
    Inventors: Hiroshi Kambayashi, Akinobu Teramoto, Tadahiro Ohmi
  • Publication number: 20150084013
    Abstract: There is provided with an organic semiconductor element. The organic semiconductor element has a source electrode portion, a drain electrode portion, an active layer region of an organic semiconductor, a gate insulating film, and a gate electrode portion. The source electrode portion has a multilayer structure where layers are arranged in order of a work function from a lowermost layer region in contact with the active layer region to an uppermost layer region. A work function of a material of the lowermost layer region is closer to a work function of a material of the active layer region than a work function of a material of the uppermost layer region. The lowermost region is made of lanthanum boride (LaB6) and contains nitrogen.
    Type: Application
    Filed: June 17, 2014
    Publication date: March 26, 2015
    Applicant: TOHOKU UNIVERSITY
    Inventor: Tadahiro Ohmi
  • Patent number: 8981234
    Abstract: Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: March 17, 2015
    Assignees: National University Corporation Tohoku University, Daisho Denshi Co., Ltd.
    Inventors: Tadahiro Ohmi, Tetsuya Goto
  • Publication number: 20150069674
    Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
    Type: Application
    Filed: November 17, 2014
    Publication date: March 12, 2015
    Inventors: Masahiro OKESAKU, Tadahiro OHMI, Tetsuya GOTO, Takaaki MATSUOKA, Toshihisa NOZAWA, Atsutoshi INOKUCHI, Kiyotaka ISHIBASHI
  • Publication number: 20150054075
    Abstract: There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.
    Type: Application
    Filed: September 30, 2014
    Publication date: February 26, 2015
    Applicant: TOHOKU UNIVERSITY
    Inventors: Tadahiro Ohmi, Hiroaki Tanaka
  • Patent number: 8941005
    Abstract: It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20, a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24. On the second electrode layer 26, a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28, a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: January 27, 2015
    Assignee: National University Corporation Tohoku University
    Inventor: Tadahiro Ohmi
  • Patent number: 8941091
    Abstract: A semiconductor device includes a gate electrode which is formed on a substrate, and contains Al and Zr, a gate insulating film which is formed to cover at least the upper surface of the gate electrode, and contains Al and Zr, and an insulator layer formed on the substrate to surround the gate electrode.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: January 27, 2015
    Assignee: National University Corporation Tohoku University
    Inventor: Tadahiro Ohmi
  • Patent number: 8915999
    Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: December 23, 2014
    Assignees: Tokyo Electron Limited, National University Corporation Tohoku University
    Inventors: Masahiro Okesaku, Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka, Toshihisa Nozawa, Atsutoshi Inokuchi, Kiyotaka Ishibashi
  • Publication number: 20140367699
    Abstract: The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.
    Type: Application
    Filed: September 2, 2014
    Publication date: December 18, 2014
    Applicants: TOHOKU UNIVERSITY, FUJI ELECTRIC CO., LTD., TOKYO ELECTRON LIMITED
    Inventors: Akinobu TERAMOTO, Hiroshi KAMBAYASHI, Hirokazu UEDA, Yuichiro MOROZUMI, Katsushige HARADA, Kazuhide HASEBE, Tadahiro OHMI
  • Patent number: 8906796
    Abstract: A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: December 9, 2014
    Assignee: Tohoku University
    Inventors: Hiroshi Kambayashi, Akinobu Teramoto, Tadahiro Ohmi
  • Patent number: 8895410
    Abstract: A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H2 gas so as to suppress the oxidation reaction due to the water, it is possible to improve the hydrogen termination on the wafer surface.
    Type: Grant
    Filed: September 13, 2005
    Date of Patent: November 25, 2014
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori
  • Patent number: 8889545
    Abstract: Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CFx film as an interlayer insulating film, that can make the most of the advantage of the CFx film having a low dielectric constant, and that can prevent degradation of the properties of the CFx film due to CMP. The method of this invention includes (a) forming a CFx film, (b) forming a recess of a predetermined pattern on the CFx film, (c) providing a wiring layer so as to bury the recess and to cover the CFx film, and (d) removing the excess wiring layer on the CFx film other than in the recess by CMP (Chemical Mechanical Polishing), thereby exposing a surface of the CFx film, wherein (e) nitriding the surface of the CFx film is provided before or after (b).
    Type: Grant
    Filed: October 3, 2011
    Date of Patent: November 18, 2014
    Assignee: National University Corporation Tohoku University
    Inventors: Tadahiro Ohmi, Xun Gu
  • Patent number: 8841545
    Abstract: Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film.
    Type: Grant
    Filed: February 10, 2009
    Date of Patent: September 23, 2014
    Assignees: Tohoku University, Tokyo Electron Limited
    Inventors: Yoshihide Wakayama, Kazuki Moyama, Tadahiro Ohmi, Akinobu Teramoto
  • Publication number: 20140252436
    Abstract: There is provided a semiconductor device with basic electronic elements in a three-dimensional structure. The semiconductor device has a source region and a drain region each of which includes an electrode and a silicide region, and is formed with a plurality of different crystal planes. The silicide regions on different crystal planes of the source region and the drain region have different thicknesses.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 11, 2014
    Applicant: TOHOKU UNIVERSITY
    Inventors: Tomoyuki Suwa, Hiroaki Tanaka, Tadahiro Ohmi
  • Patent number: 8807573
    Abstract: An annular metal gasket for sealing a space between members by being pressed in the vertical direction in a state of being mounted between the members, the metal gasket comprising an annular outer ring having a substantially C-shaped cross-section and having a circumferential-direction opening formed therein, and an annular inner ring fitted inside the outer ring. The inner ring is formed so as to have a polygonal cross-section. Bend parts having an Inner angle larger than 180° are formed between the upper corner part and the inner- and outer-circumference-side corner parts; and between the lower corner part and the inner- and outer-circumference-side corner parts.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: August 19, 2014
    Assignees: Tohoku University, Nippon Valqua Industries, Ltd.
    Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Koji Sato, Yoshinori Uchino, Masamichi Iwaki