Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 ?m or lower.

Abstract: A metalworking machine includes a tool for machining a workpiece metal and a cooling liquid supply unit for supplying a cooling liquid to a machining portion between the tool and the workpiece metal. The cooling liquid is formed by applying a degassing treatment that removes dissolved gases from the cooling liquid, and a hydrogenation treatment that adds hydrogen to the cooling liquid.

Abstract: The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

Abstract: In a semiconductor device, the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and a contact resistance of 10?11 ?cm2 or less is realized by setting a work function difference of 0.2 eV or less between an electrode and the silicon. Thus, the semiconductor device can operate on a frequency of 10 GHz or higher.

Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).

Abstract: The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps? of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps? which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

Abstract: Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.

Abstract: Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.

Abstract: In a deposited thin film for use in a semiconductor device or the like, adsorption of contaminants is a problem. In the case in which a gas pressure in a chamber is maintained in a viscous flow region, the adsorption of the organic substances is significantly decreased as compared with the case in which the gas pressure is maintained in a molecular flow region. The gas pressure is controlled so that it can be set in the molecular flow region when forming the deposited thin film, and set in the viscous flow region when such deposition is not being performed. Thus, the deposited thin film is formed with less contamination from the organic substances.

Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

Abstract: A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate (702, 910) comprising a projecting part (704, 910B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (708, 920B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (706, 930B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region (710a, 710b, 910c, 910d) formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.

Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).

Abstract: An object of this invention is to provide a surface protective film which is capable of suppressing the entry of a corrosive gas as compared with conventional surface protective films. A surface protective film according to this invention is a film which contains yttria (Y2O3) as a main component and also contains cerium. Since the surface protective film contains cerium, defects such as micropores in the film are reduced, thereby enabling suppression of the entry of a corrosive gas.

Abstract: A heating device includes a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) includes a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C., the inside of the covering material being kept in a vacuum state.

Abstract: In a fluorescent lamp, a fluorescent material has a particle size of not greater than 1 ?m and a thickness of not greater than 5 ?m. With this structure, ultraviolet ray of 254 nm is efficiently converted into visible light and the light obtained by conversion is efficiently emitted to the outside.

Abstract: As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.

Abstract: In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.

Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Abstract: A control valve device develops opening/closing accuracy of a valve assembly. The valve head 310a is configured to open and close a transfer path formed in the valve housing 305 by transmitting the power to the valve assembly 310 from the power transmission member according to a pressure ratio between working fluid supplied to the first space Us and the second space Ls, respectively. The valve head has a Vickers hardness larger than a Vickers hardness of a valve seat of the transfer path to be in contact with the valve head, and a hardness difference therebetween is set to be about 200 Hv to about 300 Hv.

Abstract: A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved.