Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

Abstract: A semiconductor device comprises a gate electrode that is provided on a substrate and contains Al or an Al alloy; a gate insulating film that is so formed as to cover at least the upper surface of the gate electrode and contains an anodic oxide film that is obtained by anodizing the Al or Al alloy of the gate electrode; and an insulator layer that is so formed on the substrate as to surround the gate electrode and has a thickness that is substantially equal to a total of the thickness of the gate electrode and the thickness of the gate insulating film formed on the upper surface of the gate electrode.

Abstract: It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20, a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24. On the second electrode layer 26, a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28, a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.

Abstract: A reactor for moisture generation generates high-purity moisture at a catalytic reaction temperature that is lower than an ignition point of hydrogen gas and oxygen gas so hydrogen and oxygen gas are supplied into the reactor having a platinum catalyst layer to catalyze the reaction of the gases without combustion, wherein the reactor maintains high adhesion strength for a long time of the platinum catalyst layer to a barrier layer provided between the base material and the platinum catalyst layer. The reactor includes a reactor main body that has a gas inlet and a moisture outlet, and the Y2O3 barrier layer is formed on at least a part of an internal wall surface of the reactor main body, and the platinum catalyst layer is formed on at least a part of the Y2O3 barrier layer. A film thickness of the Y2O3 barrier layer is preferably 50 nm to 5 ?m.

Abstract: A low-compression force metal gasket includes a coating layer containing a polymer material on at least a sealing surface of the gasket, and the coating layer satisfies the following conditions (1) to (3): (1) the layer comprises a resin, a rubber or a mixture thereof having an oxygen gas permeability coefficient at 25° C. of 10×10?12 to 0.1×10?12 (m2/s); (2) when the layer is compression deformed, the storage elastic modulus (E?) at 200° C. is in the range of 1.0×107 to 1.0×102 Pa; and (3) the coating layer has a thickness of 1 to 40 ?m. The gasket provides a high seal at a low clamping force.

Abstract: [Problem] To provide a regulating valve device having a valve element opened or closed by a working fluid. [Solution to Problem] A valve element 310 has a structure in which a valve head 310a and a valve body 310b are coupled by a valve stem 310c. In the valve box 305, the valve element 310 and a power transmitting member 320a are slidably housed. A first bellows 320b is fixed to the power transmitting member 320a and the valve box 305 to form a first space Us at a position on a side of the power transmitting member 320a opposite the valve element. A second bellows 320c is fixed to the power transmitting member 320a and the valve box 305 to form a second space Ls at a position on a side of the power transmitting member 320a closer to the valve element.

Abstract: An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm?3 to achieve a large gate voltage swing.

Abstract: The object of the present invention is to form a chromium-oxide film, excellent in corrosion resistance, without containing an oxide film of other metal onto the metallic material. The chromium-oxide passivation film, excellent in corrosion resistance, without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for safely supplying fluid with hard corrosivity is able to be provided. One step of forming the passivation film consisting of a chromium oxide layer by giving heat treatment, in an oxidizing atmosphere, after coating chromium on the metallic material having a surface roughness (Ra) not more than 1.5 ?m.

Abstract: Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion.

Abstract: In a method for measuring an electronic device which is an object to be measured, a passive element is connected to the electronic device in parallel, and electric parameters of the electronic device are extracted by measuring an impedance of the entire circuit.

Abstract: A large liquid crystal display (100) comprises a light guide plate (3) arranged on the back side of a liquid crystal panel (1). The front surface of the light guide plate (3) is flat, while the back surface thereof is concave. The upper and lower end faces of the light guide plate (3) respectively facing hot cathode fluorescent lamps (2a, 2b) have a convex shape projecting toward the respective lamps. White light from the fluorescent lamps is incident on the upper and lower end faces of the light guide plate directly or by being reflected by reflectors (4a, 4b), and propagates within the light guide plate while being reflected by the front and back surfaces of the light guide plate. At the front surface of the light guide plate, a part of the white light is directed toward the back side of the liquid crystal panel (1) by a light guide portion (5).

Abstract: A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Abstract: It has been found out that, among transparent conductive layers, a zinc oxide layer has a function of preventing diffusion of sodium. An electronic apparatus is obtained which uses the zinc oxide layer as an electrode of the electronic apparatus and also as a diffusion preventing layer for preventing diffusion of sodium from a glass substrate.

Abstract: A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

Abstract: An object of this invention is to provide an electrodialyzer which is effective in saving electric power. According to this invention, there is provided an electrodialyzer which electrically dialyzes water to be processed while a voltage causing substantially no current to flow is applied between an anode and a cathode.

Abstract: Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same.

Abstract: A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

Abstract: A microwave plasma processing apparatus for plasma-processing a substrate by exciting a gas by the microwave includes a processing container formed of metal, a microwave source for outputting the microwave, a first dielectric member that faces an inner wall of the processing container and for transmitting the microwave output from the microwave source into the processing container, and a second dielectric member that is provided on an inner surface of the processing container and restrains the microwave from propagating along the inner surface of the processing container.

Abstract: Because an O-ring of synthetic resin is pyrolyzed in the atmosphere at a high temperature of 150° C. or more, the airtightness cannot be maintained. In an outside air shut-off container according to the present invention, an inert gas is supplied between an O-ring, which hermetically seals a process chamber and a cover member, and the outside air while a gas passage formed between the O-ring and the outside air is covered with a sealing cover. Additionally, an aluminum oxide layer is formed on a contact surface of the O-ring to increase the pyrolysis temperature of the O-ring.

Abstract: A liquid sodium battery in which two electrode members sandwiching a partition wall formed of a Na-ion conducting solid substance are constructed by a metal having a work function whose absolute value is smaller than that of a work function of sodium and a metal having a work function whose absolute value is greater than that of the work function of sodium.