Patents by Inventor Tadahiro Ohmi

Tadahiro Ohmi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    Publication number: 20120234491
    Abstract: A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
    Type: Application
    Filed: May 11, 2012
    Publication date: September 20, 2012
    Inventors: Tadahiro OHMI, Akinobu Teramoto
  • Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
    Patent number: 8268735
    Abstract: Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.
    Type: Grant
    Filed: January 30, 2007
    Date of Patent: September 18, 2012
    Assignees: Tohoku University, Foundation for Advancement of International Science
    Inventors: Tadahiro Ohmi, Hitoshi Morinaga
  • Light emitting device and method for manufacturing light emitting device
    Patent number: 8263174
    Abstract: Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.
    Type: Grant
    Filed: June 13, 2007
    Date of Patent: September 11, 2012
    Assignees: Tokyo Electron Limited, National University Corporation Tohoku University
    Inventors: Yasushi Yagi, Shingo Watanabe, Toshihisa Nozawa, Chuichi Kawamura, Kimihiko Yoshino, Tadahiro Ohmi
  • Method of manufacturing bellows
    Patent number: 8250966
    Abstract: Method for producing at low cost bellows which show high durability even when used in a quite reactive atmosphere. The method for manufacturing bellows includes the steps of: I: forming an untreated bellows from a flat base plate, the base plate including 15 to 30 wt % of Cr, 5 to 40 wt % of Ni, 0.9 to 6 wt % of Al, less than 1 wt % of Mo, less than 0.1 wt % of Mn, less than 0.1 wt % of C, less than 0.1 wt % of S, less than 0.1 wt % of P and a balance of Fe and an unavoidable impurity (relative to 100 wt % of the base plate); and II: heating the untreated bellows at a temperature of 750 to 895° C. in an atmosphere which contains water and hydrogen and in which the volume ratio of hydrogen to water (H2/H2O) is in the range of 2×103 to 1×1012, thereby forming an Al2O3 passivation film on a surface of the untreated bellows.
    Type: Grant
    Filed: December 3, 2008
    Date of Patent: August 28, 2012
    Assignees: Nippon Valqua Industries, Ltd., Tohoku University
    Inventors: Tsutomu Yoshida, Tadahiro Ohmi, Yasuyuki Shirai, Masafumi Kitano
  • FLEX-RIGID PRINTED WIRING BOARD AND MANUFACTURING METHOD THEREOF
    Publication number: 20120211465
    Abstract: A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf<tR.
    Type: Application
    Filed: April 30, 2012
    Publication date: August 23, 2012
    Applicants: TOHOKU UNIVERSITY, DAISHO DENSHI CO., LTD.
    Inventors: Akihiro SATO, Masahiro SASAKI, Tadahiro OHMI, Akihiro MORIMOTO
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120208375
    Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
    Type: Application
    Filed: April 23, 2012
    Publication date: August 16, 2012
    Inventors: Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii
  • THIN FILM, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT COMPRISING THE THIN FILM
    Publication number: 20120205652
    Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
    Type: Application
    Filed: October 7, 2010
    Publication date: August 16, 2012
    Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi
  • Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system
    Patent number: 8241457
    Abstract: A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: August 14, 2012
    Assignees: Tokyo Electron Limited, Tohoku University
    Inventors: Mitsuo Kato, Masaki Sugiyama, Akihiko Hiroe, Tadahiro Ohmi, Masaki Hirayama
  • PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL
    Publication number: 20120186638
    Abstract: Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n+-type a-Si layer is in contact with a transparent electrode formed by an n+-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.
    Type: Application
    Filed: July 22, 2011
    Publication date: July 26, 2012
    Inventor: Tadahiro OHMI
  • SEMICONDUCTOR DEVICE
    Publication number: 20120187499
    Abstract: This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.
    Type: Application
    Filed: April 4, 2011
    Publication date: July 26, 2012
    Applicant: National University Corporation Tohoku University
    Inventors: Tadahiro OHMI, Hiroaki Tanaka
  • Semiconductor device with Cu metal-base and manufacturing method thereof
    Patent number: 8227912
    Abstract: As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
    Type: Grant
    Filed: October 10, 2004
    Date of Patent: July 24, 2012
    Assignee: Foundation for Advancement of International Science
    Inventors: Tadahiro Ohmi, Akihiro Morimoto
  • Multilayer circuit board and electronic device
    Patent number: 8217270
    Abstract: A multilayered circuit board which is provided with a low-permittivity interlayer insulating film, and which can significantly improve the performance such as signal transmission characteristics of the multilayered circuit board such as a package and a printed board, because the surface in contact with the interlayer insulating film of the circuit board has no unevenness to eliminate the lowering of production yield and the deterioration of high-frequency signal transmission characteristics; and electronic equipment using the circuit board.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: July 10, 2012
    Assignee: Tohoku University
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Akihiro Morimoto
  • Metal oxide film, laminate, metal member and process for producing the same
    Patent number: 8206833
    Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: June 26, 2012
    Assignees: Tohoku University, Mitsubishi Chemical Corporation
    Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa
  • TRANSISTOR AND SEMICONDUCTOR DEVICE
    Publication number: 20120146102
    Abstract: An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm?3 to achieve a large gate voltage swing.
    Type: Application
    Filed: February 13, 2012
    Publication date: June 14, 2012
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda
  • Plasma processing method and plasma processing apparatus
    Patent number: 8198195
    Abstract: A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: June 12, 2012
    Assignee: Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Akinobu Teramoto
  • Interlayer insulating film, interconnection structure, and methods of manufacturing the same
    Patent number: 8193642
    Abstract: This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3. The wiring structure comprises an interlayer insulating film, a contact hole provided in the interlayer insulating film, and a metal filled into the contact hole. The insulating film comprises a first fluorocarbon film provided on the substrate layer and a second fluorocarbon film provided on the first fluorocarbon film.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: June 5, 2012
    Assignees: Tohoku University, Foundation for Advancement of International Science
    Inventor: Tadahiro Ohmi
  • Compound-type thin film, method of forming the same, and electronic device using the same
    Patent number: 8188468
    Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: May 29, 2012
    Assignees: National University Corporation Tohoku University, Rohm Co., Ltd., Tokyo Electron Limited, Ube Industries, Ltd.
    Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki
  • Flex-rigid printed wiring board and manufacturing method thereof
    Patent number: 8188372
    Abstract: A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf<tR.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: May 29, 2012
    Assignees: Daisho Denshi Co., Ltd., Tohoku University
    Inventors: Akihiro Sato, Masahiro Sasaki, Tadahiro Ohmi, Akihiro Morimoto
  • PLASMA PROCESSING APPARATUS AND PRINTED WIRING BOARD MANUFACTURING METHOD
    Publication number: 20120125765
    Abstract: It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films.
    Type: Application
    Filed: July 16, 2010
    Publication date: May 24, 2012
    Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • WET PROCESSING APPARATUS AND WET PROCESSING METHOD
    Publication number: 20120125376
    Abstract: A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.
    Type: Application
    Filed: May 27, 2010
    Publication date: May 24, 2012
    Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka, Takenao Nemoto, Yoriyuki Murakawa, Kazuhiro Yoshikawa