Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

Abstract: A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.

Abstract: There is provided an active matrix display device including a flattening layer formed so as to surround a source electrode wiring, a drain electrode wiring, and a signal line, so that the source electrode wiring, the drain electrode wiring, and the signal line form substantially the same surface with the flattening layer.

Abstract: In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel.

Abstract: The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps? of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps? which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

Abstract: Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n+-type a-Si layer is in contact with a transparent electrode formed by an n+-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.

Abstract: In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.

Abstract: By hydrogen-terminating a semiconductor surface using a solution containing HF2? ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.

Abstract: An object of the present invention is to provide a brewed liquid filtering system which is capable of reducing a production cost and which has a structure suitable for cleaning of a filter. A brewed liquid filtering system 1 of the present invention has a first branching pipe and a second branching pipe. The first branching pipe and the second branching pipe are provided with a first filter and a second filter, respectively. The first branching pipe is provided with first branching pipe valves V1-1 and V1-2 arranged so that the first filter is interposed therebetween, and connected to first cleaning pipes 10-31 and 10-32 which are arranged closer to the first filter than the first branching pipe valves V1-1 and V1-2.

Abstract: A fluid passage is emergently-closed in a short time without causing a water hammer by an extremely simple device and operation. A water hammerless closing device includes an actuator operated valve provided in a fluid passage, an electro-pneumatic conversion device for supplying a 2-step actuator operating pressure Pa to an actuator operated-type valve, a vibration sensor removably secured to the pipe passage on the upstream side of the actuator operated-type valve, and a tuning box receiving a vibration detection signal Pr from the vibration sensor and delivering a control signal Sc to the electro-pneumatic conversion device for controlling the step operating pressure Ps? of the 2-step actuator operating pressure Pa so that, with the control signal Sc being regulated, the electro-pneumatic conversion device outputs the 2-step actuator operating pressure Pa with the step operating pressure Ps? capable of bringing the vibration detection signal Pr substantially to zero.

Abstract: In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0?x?1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

Abstract: A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

Abstract: An object of the present invention is to improve a sputtering efficiency and a production efficiency in a magnetron sputtering method using a rectangular target. A magnetron sputtering apparatus 10 according to the present invention is a vertical-passing-type sputtering apparatus for performing a sputtering deposition process while moving (passing) substrate PL and PR in a state in which the substrates are vertically raised. The magnetron sputtering apparatus 10 is formed as a sputtering apparatus capable of simultaneously processing two substrates with a single or common magnetic field generation mechanism 42 and targets 12L and 12R of bilateral symmetry (symmetry between the upper target and the lower target in the drawing).

Abstract: Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

Abstract: A dielectric resonator antenna which emits an electric wave by having a dielectric body resonate is disclosed. A magnetic material is contained in the electric body, thereby increasing the relative permeability to more than 1 and lowering the relative permittivity. Consequently, the Q-value of the resonance can be lowered while maintaining the rate of wavelength shortening. With this technique, a broadband dielectric resonator antenna can be realized.

Abstract: Scratches and dishing are prevented from being generated when copper, which is deposited on an interlayer insulating film formed of an organic low-k film, is polished during a damascene process. In the CMP apparatus, while a rotating center axis of a rotating head, which has a polishing pad attached thereon, and a rotating center axis of a rotating table, which has a semiconductor wafer disposed face-up thereon, are aligned on the same vertical line, and the rotating head and the rotating table are spin-rotating in the same direction, the rotating head is lowered and the polishing pad touches the semiconductor wafer on the rotating table. Accordingly the polishing pad is prevented from scrubbing in a direction opposite to the rotating direction of the semiconductor wafer in the entire surface of the semiconductor wafer.

Abstract: A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular r

Abstract: The invention provides a valve and a method of operating the valve that makes it possible to reduce the diameter of the vacuum exhaustion pipings to make the facility for the vacuum exhaustion system small, which results in lower costs and shortens vacuum exhaustion time, and also which can prevent corrosion, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of gas flowing through the pipings. In particular, in accordance with the present invention, an aluminum passivation is applied on the piping parts, i.e. the valve and others, that are used in the vacuum exhaustion system so as to inhibit gas decomposition caused by temperature rise at the time of baking so that components for reduction in the diameter size in the vacuum exhaustion system are provided. Thus, corrosion, cloggings and seat leakages caused by gas decomposition are prevented.

Abstract: A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.

Abstract: The wet treatment liquid feed nozzle of the invention comprises an introducing path 10 having an introducing port 7, a discharging path 12 having a discharging port 15, a crossing section 14 formed by causing the introducing path 10 and the discharging path 12 to cross at the other ends thereof, a nozzle assembly 50 having an opening section 6 opening to an object to be treated 1, provided at the crossing section 14, and pressure control means 13, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated 1 and the atmospheric pressure provided at least on the discharging path 12 side so that the wet treatment liquid having been in contact with the object to be treated 1 via the opening section 6 does not flow to outside the discharging path 12.