Abstract: According to one embodiment, a semiconductor storage device includes a first storage area including a plurality of memory cells each including a resistance change element which stores data; a second storage area including a plurality of memory cells each including a resistance change element which stores data; a sub memory cell array including the first storage area and the second storage area: a memory cell array including a plurality of sub memory cell arrays arranged along a column direction and a row direction; a third storage area which stores redundancy information and to supply the redundancy information to the sub memory cell array; and a control circuit which controls an access operation to the memory cell array.

Abstract: According to one embodiment, a semiconductor storage device includes a first storage area including a plurality of memory cells each including a resistance change element which stores data; a second storage area including a plurality of memory cells each including a resistance change element which stores data; a sub memory cell array including the first storage area and the second storage area: a memory cell array including a plurality of sub memory cell arrays arranged along a column direction and a row direction; a third storage area which stores redundancy information and to supply the redundancy information to the sub memory cell array; and a control circuit which controls an access operation to the memory cell array.

Abstract: A power supply circuit includes a first circuit connected to a first line, to which a power supply voltage is applied, and a second line, and a power supply clamp circuit connected to the first and second lines. The power supply clamp circuit includes a current path circuit which connects the first and the second lines to each other, and a control circuit which outputs a control signal to the current path circuit. The current path circuit includes a transistor and a diode group. The power supply clamp circuit is driven during a period in which a first voltage is applied to the first line and controls a potential of the first line so as to become a potential lower than the first voltage.

Abstract: According to one embodiment, a semiconductor storage device includes a cell array including resistance change elements formed above a semiconductor substrate; first cell transistors formed on the semiconductor substrate and provided in association with the resistance change elements; first gate electrodes included in the first cell transistor and extending in a first direction; a first bit lines electrically connected to the resistance change elements respectively and extending in a second direction perpendicular to the first direction; a second bit lines electrically connected to one end of a current path of the first cell transistors respectively and extending in the second direction; and first active areas in which the first cell transistors are formed, and which extend in a direction crossing the first direction at a first angle.

Abstract: According to one embodiment, a power supply circuit includes a first circuit connected to a first line, to which a power supply voltage is applied, and a second line, and a power supply clamp circuit connected to the first and second lines. The power supply clamp circuit includes a current path circuit which connects the first and the second lines to each other, and a control circuit which outputs a control signal to the current path circuit. The current path circuit includes a transistor and a diode group. The power supply clamp circuit is driven during a period in which a first voltage is applied to the first line and controls a potential of the first line so as to become a potential lower than the first voltage.

Abstract: One embodiment provides a ferroelectric memory including: memory cells each including a ferroelectric memory; first and second bitlines configured to read out cell signals from the memory cells; a first circuit configured to fix, when the cell signal is read from the memory cell to the first bitline, a voltage of the second bitline to a first power-supply voltage, and then set the second bitline to a second power-supply voltage different from the first power-supply voltage; a second circuit configured to set, after the first circuit sets the second bitline to the second power-supply voltage, the second bitline to a reference voltage; and a third circuit configured to amplify a voltage difference between the first bitline to which the cell signal is read and the second bitline to which the reference voltage is set.

Abstract: Semiconductor memory contains memory cells having ferroelectric capacitors and cell transistors, bit lines connected to memory cells, word lines connected to gate electrodes of cell transistors, plate lines connected to one of two electrodes of ferroelectric capacitors, sense amplifiers connected between each pair of bit lines. Further, a test pad is provided in order to apply an external voltage to each of bit lines, test transistors are provided corresponding to bit lines respectively, each of test transistors is connected between the test pad and each of bit lines, a fatigue test bias circuit is connected to a first node located between the test pad and test transistors. Test transistors are shared in a first test to apply a first voltage to ferroelectric capacitors from an outside via the test pad and a second test to apply a second voltage to ferroelectric capacitors from the fatigue test bias circuit.

Abstract: One embodiment provides a ferroelectric memory including: memory cells each including a ferroelectric memory; first and second bitlines configured to read out cell signals from the memory cells; a first circuit configured to fix, when the cell signal is read from the memory cell to the first bitline, a voltage of the second bitline to a first power-supply voltage, and then set the second bitline to a second power-supply voltage different from the first power-supply voltage; a second circuit configured to set, after the first circuit sets the second bitline to the second power-supply voltage, the second bitline to a reference voltage; and a third circuit configured to amplify a voltage difference between the first bitline to which the cell signal is read and the second bitline to which the reference voltage is set.

Abstract: A semiconductor memory apparatus includes: a bit line; a word line; a local bit line; a first switch unit provided between the local bit line and the bit; a memory cell connected to the bit line and the word line; a memory cell array including the memory cell; a first sense circuit connected to the bit line and configured to amplify a signal read out from the memory cell; and a second sense circuit connected to the local bit lines and configured to amplify a signal amplified by the first sense circuit, wherein the first switch unit disconnects the local bit line from the bit line when the first sense circuit amplifies the signal, and connects the local bit line to the bit line when the second sense circuit amplifies the signal amplified by the first sense circuit.

Abstract: A memory includes a cell array; bit lines; word lines; sense amplifiers; first determination transistors receiving information data and making a connection between a first voltage source and a first determination node be in a conductive or a non-conductive state based on a logic value of the information data; second determination transistors receiving the information data detected by the sense amplifiers and making a connection between the first voltage source and a second determination node be in a conductive or a non-conductive state based on the logic value of the information data; a second voltage source charging the first and the second determination nodes; and a determination unit detecting potentials of the first determination node and the second determination node when a logic of the information data is inverted logically to determine maximum and minimum values of potential of the information data.

Abstract: Semiconductor memory contains memory cells having ferroelectric capacitors and cell transistors, bit lines connected to memory cells, word lines connected to gate electrodes of cell transistors, plate lines connected to one of two electrodes of ferroelectric capacitors, sense amplifiers connected between each pair of bit lines. Further, a test pad is provided in order to apply an external voltage to each of bit lines, test transistors are provided corresponding to bit lines respectively, each of test transistors is connected between the test pad and each of bit lines, a fatigue test bias circuit is connected to a first node located between the test pad and test transistors. Test transistors are shared in a first test to apply a first voltage to ferroelectric capacitors from an outside via the test pad and a second test to apply a second voltage to ferroelectric capacitors from the fatigue test bias circuit.

Abstract: A semiconductor memory apparatus includes: a bit line; a word line; a local bit line; a first switch unit provided between the local bit line and the bit; a memory cell connected to the bit line and the word line; a memory cell array including the memory cell; a first sense circuit connected to the bit line and configured to amplify a signal read out from the memory cell; and a second sense circuit connected to the local bit lines and configured to amplify a signal amplified by the first sense circuit, wherein the first switch unit disconnects the local bit line from the bit line when the first sense circuit amplifies the signal, and connects the local bit line to the bit line when the second sense circuit amplifies the signal amplified by the first sense circuit.

Abstract: A memory includes a cell array; bit lines; word lines; sense amplifiers; first determination transistors receiving information data and making a connection between a first voltage source and a first determination node be in a conductive or a non-conductive state based on a logic value of the information data; second determination transistors receiving the information data detected by the sense amplifiers and making a connection between the first voltage source and a second determination node be in a conductive or a non-conductive state based on the logic value of the information data; a second voltage source charging the first and the second determination nodes; and a determination unit detecting potentials of the first determination node and the second determination node when a logic of the information data is inverted logically to determine maximum and minimum values of potential of the information data.

Abstract: A precharge circuit precharges a bit line paired with the bit line to which the selected one of the memory cells is connected, by applying to the former bit line an external reference voltage for comparison with a voltage in the bit line caused by selection of the memory cell. A precharge assist circuit, which is connected to the former bit line in parallel with the precharge circuit, charges the bit line to a predetermined potential by using a power supply voltage. A sense amplifier, which is connected to the pair of bit lines, senses and amplifies a potential of a bit line that is connected to a memory cell selected by word lines.

Abstract: A ferroelectric memory comprises a memory cell block of plural serially connected memory cells each including a cell transistor and a ferroelectric capacitor connected in parallel therewith. And the ferroelectric memory comprises a cell transistor resistance measuring circuit, a word line voltage controller, and a word line voltage generator. The cell transistor resistance measuring circuit measures a resistance of the cell transistor. The word line voltage controller controls a word line voltage applied to a gate of the cell transistor based on the resistance of the cell transistor. The word line voltage generator generates the word line voltage.

Abstract: A ferroelectric memory includes a cell block that includes: a block select transistor arranged between a bit line and a local bit line; memory cells arranged between the local bit line and a plate line, each of the memory cells contains a cell transistor and a ferroelectric capacitor connected in series; and a reset transistor arranged between the local bit line and the plate line. A test method for the ferroelectric memory includes: applying a potential that allows the cell transistors to be ON to the word lines; applying a potential that allows the reset transistor to be OFF to the reset line; applying a potential that allows the block select transistor to be ON to the block select line; and applying a stress voltage between the bit line and the plate line.

Abstract: A ferroelectric memory comprises a memory cell block of plural serially connected memory cells each including a cell transistor and a ferroelectric capacitor connected in parallel therewith. And the ferroelectric memory comprises a cell transistor resistance measuring circuit, a word line voltage controller, and a word line voltage generator. The cell transistor resistance measuring circuit measures a resistance of the cell transistor. The word line voltage controller controls a word line voltage applied to a gate of the cell transistor based on the resistance of the cell transistor. The word line voltage generator generates the word line voltage.

Abstract: A ferroelectric memory includes a cell block that includes: a block select transistor arranged between a bit line and a local bit line; memory cells arranged between the local bit line and a plate line, each of the memory cells contains a cell transistor and a ferroelectric capacitor connected in series; and a reset transistor arranged between the local bit line and the plate line. A test method for the ferroelectric memory includes: applying a potential that allows the cell transistors to be ON to the word lines; applying a potential that allows the reset transistor to be OFF to the reset line; applying a potential that allows the block select transistor to be ON to the block select line; and applying a stress voltage between the bit line and the plate line.

Abstract: A semiconductor memory according to an example of the present invention comprises first and second bit lines having a twisted bit-line architecture in which the first and second bit lines are alternately twisted at a constant period in first and second columns, a first cell block which is disposed in the first column, a first block select transistor which is connected between the first or second bit line and one end of the first cell block, a second cell block which is disposed in the second column, and a second block select transistor which is connected between the second or first bit line and one end of the second cell block.

Abstract: An integrated circuit device comprises a memory cell block, a word line selecting circuit and a driving circuit. The memory cell block comprises memory cells connected in series. The memory cell comprises a cell transistor including a gate which is connected to a word line, and a ferroelectric capacitor connected to terminals of the cell transistor. The word line selecting circuit successively selects the word lines connected to the cell transistors in the memory cells in the memory cell block in response to address signals successively input from an outside of the device, during an active cycle. The driving circuit applies a given voltage between ends of a current path provided of the cell transistors in the memory cells in the memory cell block, during a time period for which the word lines connected to the cell transistors are successively selected by the word line selecting circuit.