Abstract: A transcutaneous recharging system for providing power to an implantable medical device comprises a primary side circuit for transmitting power in the form of magnetic flux; and a secondary side circuit integral to the implantable medical device for receiving the power transmitted from the primary side circuit and for providing the received power to recharge a battery in the implantable medical device, wherein the primary and secondary side circuits are not physically coupled. A variety of attachment configurations are disclosed for attaching and shielding the secondary circuit directly onto the housing of the implantable medical device, inclusive of flexible printed circuit coils and wire coils recessed into helical notches.

Abstract: A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device.

Abstract: Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.

Abstract: In a method for forming a contact plug of a semiconductor device, epitaxial silicon is formed as contact material using a solid-phase epitaxy method. The method can obtain reduced contact resistance and improved refresh characteristics, compared with prior arts using polysilicon as contact material. Also, the method uses an SPE method, not a conventional SEG method, to form epitaxial silicon so that it can substantially reduce thermal budget through low-temperature processes. The method can also use conventional polysilicon deposition process without modification to form epitaxial silicon with ease and productivity.

Abstract: Disclosed is a quenched and tempered steel wire with superior cold forging characteristics, consisting essentially of 0.1-0.5 wt % of C, 1.0 wt % or less of Si, 0.2-2.5 wt % of Mn, 0.03 wt % or less of P, and 0.03 wt % of S, with the balance being Fe and inevitable impurities, which has tensile strength of 700-1300 Mpa and percent spheroidization of carbides of at least 30%. Such quenched and tempered steel wire, which is subjected to a quenching and tempering processes by high frequency induction heating in a short period, without a spheroidizing annealing process needing a long period, has forging characteristics equal or superior to those of spheroidizing annealed steel wire, thus increasing productivity. Therefore, the quenched and tempered steel wire is applicable to make various bolts and shafts as parts for machine structures requiring high strengths.

Abstract: A method for fabricating an isolation layer in a semiconductor device is disclosed. The disclosed method comprises steps of: forming a trench on a semiconductor substrate; forming a flowing insulating layer within the trench; making the insulating layer precise; and forming a precise insulating layer over an upper surface of the whole structure on which the flowing insulating layer is formed. According to the method of fabricating an isolation layer in a semiconductor device, occurrence of fine pores at adjacent active regions of sidewalls in a trench can be prevented.

Abstract: The present invention relates to the polarization-independent optical polymeric intensity modulator independent of input signal using polymers with electro-optical property. To use the electro-optical property for electro-optical polymer, polymers must be poled by applying high voltage to the waveguide. The size of phase modulation caused by such an poling varies from the biggest value at polarization parallel to the poling to the smallest value at polarization perpendicular to the poling. Therefore, the performance of the electro-optical polymeric intensity modulator depends on the polarization state of input light. The present invention provides the polarization-independent optical polymeric intensity modulator capable of modulating the optical intensity without regard to the polarization of the input signal by making the polarizing directions of two optical paths of M-Z interferometer perpendicular each other.

Abstract: An adjustable spinal stabilization system having a flexible connection unit for non-rigid stabilization of the spinal column. In one embodiment, the spinal stabilization system includes a flexible connection unit having a tether running through a hollow portion of the flexible connection unit, wherein the tether limits bending of the flexible connection unit. In a further embodiment the tether is pre-tensioned. In a further embodiment, the tension upon or compression of the tether is adjustable.

Abstract: A connection unit for use in a spinal stabilization device, in one embodiment, includes a longitudinal member having first and second ends, and a flexible section disposed between the first and second ends, the flexible section having at least one groove formed therein, wherein the flexible section is characterized by a cross-sectional profile that is different from that of the first and second ends.

Abstract: A flexible connection unit for use in a spinal fixation device, includes: a longitudinal member having first and second ends; at least one spacer located between the first and second ends, wherein the at least one spacer comprises a first portion made from a first material and a second portion made from a second material; and at least one flexible member located in a longitudinal axial channel of the at least one spacer, wherein the first and second ends substantially limit motion of the at least one spacer in the longitudinal axial direction with respect to the at least one flexible member.

Abstract: A flexible connection unit for use in a spinal stabilization device, comprising a longitudinal member having first and second end portions and a flexible portion located between the end portions, wherein the flexible portion comprises at least one spacer and a flexible member located in a longitudinal axial channel of the at least one spacer, wherein the flexible member comprises a biocompatible metal material and the end portions maintain the at least one spacer in a substantially fixed longitudinal axial position with respect to the flexible member.

Abstract: Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured.

Abstract: Semiconductor nanocrystals surface-coordinated with a compound containing a photosensitive functional group, a photosensitive composition comprising semiconductor nanocrystals, and a method for forming semiconductor nanocrystal pattern by producing a film using the photosensitive semiconductor nanocrystals or the photosensitive composition, exposing the film to light and developing the exposed film, are provided. The semiconductor nanocrystal pattern exhibits luminescence characteristics comparable to the semiconductor nanocrystals before patterning and can be usefully applied to organic-inorganic hybrid electroluminescent devices.

Abstract: A flexible spinal fixation device having a flexible connection unit for non-rigid stabilization of the spinal column. In one embodiment, the fixation device includes at least two securing members configured to be inserted into respective adjacent spinal pedicles, each securing member each including a coupling assembly. The fixation device further includes a flexible connection unit configured to be received and secured within the coupling assemblies of each securing member so as to flexibly stabilize the affected area of the spine.

Abstract: The present invention relates to a method for isolating semiconductor devices. The method includes the steps of: forming a patterned pad nitride layer pattern to open at least one isolation region on the substrate; forming a first trench and a second trench by etching the exposed substrate; depositing a first oxide layer to fill the first trench by performing an atomic layer deposition (ALD) method; etching a portion of the first oxide layer which is filled into the wide trench; and depositing a second oxide layer by performing a deposition method.

Abstract: A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2 layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.

Abstract: A flexible spinal fixation device having a flexible metallic connection unit for non-rigid stabilization of the spinal column. In one embodiment, the fixation device includes at least two securing members configured to be inserted into respective adjacent spinal pedicles, each securing member each including a coupling assembly. The fixation device further includes a flexible metal connection unit configured to be received and secured within the coupling assemblies of each securing member so as to flexibly stabilize the affected area of the spine.

Abstract: A method and system for marking and guiding the insertion of securing members (e.g., pedicle screws) of a spinal fixation device.

Abstract: A flexible spinal fixation device having a flexible metallic connection unit for non-rigid stabilization of the spinal column. In one embodiment, the fixation device includes at least two securing members configured to be inserted into respective adjacent spinal pedicles, each securing member each including a coupling assembly. The fixation device further includes a flexible metal connection unit configured to be received and secured within the coupling assemblies of each securing member so as to flexibly stabilize the affected area of the spine.

Abstract: According to some embodiments of the invention, a method of controlling the depth of a trench includes forming a mask layer on a semiconductor substrate, forming a sacrificial layer on the mask layer using a material having an etch selectivity ranging from a 1:1 to a 3:1 ratio with respect to the semiconductor substrate, forming a sacrificial pattern and a mask pattern by removing a portion of the sacrificial layer and a portion of the mask layer so that an isolation region of the semiconductor substrate is exposed, and forming a trench in the isolation region of the semiconductor substrate by performing a main etch process using a point at which the top surface of the mask pattern is exposed as an etch stop point so that the sacrificial pattern and the isolation region of the semiconductor substrate are simultaneously etched.