Abstract: A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate.

Abstract: Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer.

Abstract: An image processing apparatus and an image processing method, the method including: providing one or more low dynamic range images having different exposure levels; classifying each of the one of more low dynamic range images as a saturation region, an under-saturation region, and a non-saturation region with respect to an intensity value; generating feature maps indicating a similarity between patterns of the non-saturation regions; generating final feature maps converting pixels included in the feature maps into moving pixels and non-moving pixels; defining moving regions and non-moving regions included in the one or more low dynamic range images; removing noise from the moving regions and the non-moving regions by using a first noise reduction filter for the moving regions and a second noise reduction filter for the non-moving regions; and generating a radiance map corresponding to the one or more low dynamic range images.

Abstract: Semiconductor packages are disclosed. A semiconductor package includes: a first chip that includes a chip region and scribe regions at edges of the chip region, wherein the chip region comprises integrated circuit units and main through substrate vias electrically connected to the integrated circuit units; and a second chip that is bonded onto the first chip. The semiconductor package includes dummy conductive connectors including at least dummy wiring lines, the dummy conductive connectors electrically connected to the main through substrate vias at one end, and not capable of forming an electrical connection at the other end.

Abstract: A method of manufacturing a semiconductor package includes preparing a parent substrate including package board parts laterally spaced apart from each other, mounting a first chip including a through-via electrode on each of the package board parts, forming a first mold layer on the parent substrate having the first chips, planarizing the first mold layer to expose back sides of the first chips, etching the exposed back sides of the first chips to expose back sides of the through-via electrodes, forming a passivation layer on the planarized first mold layer, the etched back sides of the first chips, and the back sides of the through-via electrodes, and selectively removing the passivation layer to expose the back sides of the through-via electrodes.

Abstract: A stack package usable in a three-dimensional (3D) system-in-package (SIP) includes a first semiconductor chip, a second semiconductor chip, and a supporter. The first semiconductor chip includes a through silicon via (TSV), and the second semiconductor chip is stacked on the first semiconductor chip and is electrically connected to the first semiconductor chip through the TSV of the first semiconductor chip. The supporter is attached onto the first semiconductor chip so as to be spaced apart from an edge of the second semiconductor chip.

Abstract: Provided is a method of forming a semiconductor package including providing a substrate having a first side and an opposite second side and providing a wafer having a plurality of semiconductor chips, each of the semiconductor chips having a conductive pad, wherein at least one of the substrate and the wafer includes a seed pattern. The first side of the substrate is bonded to the wafer with the conductive pad positioned adjacent to the first side of the substrate and the seed pattern positioned between the conductive pad and the first side of the substrate. A through hole is then formed penetrating the substrate from the second side of the substrate to expose the seed pattern. A through electrode is formed in the through hole using the seed pattern as a seed. Corresponding devices are also provided.

Abstract: Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer.

Abstract: Disclosed herein is a printed circuit board, including: a composite sheet including an insulating material and a glass plate bonded to the insulating material; and a circuit layer formed on the composite sheet.

Abstract: A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.

Abstract: In a method of fabricating a semiconductor device, a first sacrificial through-via is formed to fill a first via-hole extending from a first surface of a first substrate toward a second surface of the first substrate opposite the first surface. The first surface of the first substrate is bonded to a carrier. The first sacrificial through-via is exposed, and the first sacrificial through-via is selectively removed. After selectively removing the first sacrificial through-via, a conductive through-via is formed to fill the first via-hole.

Abstract: A multi-chip package may include a package substrate, an interposer chip, a first semiconductor chip, a thermal dissipation structure and a second semiconductor chip. The interposer chip may be mounted on the package substrate. The first semiconductor chip may be mounted on the interposer chip. The first semiconductor chip may have a size smaller than that of the interposer chip. The thermal dissipation structure may be arranged on the interposer chip to surround the first semiconductor chip. The thermal dissipation structure may transfer heat in the first semiconductor chip to the interposer chip. The second semiconductor chip may be mounted on the first semiconductor chip. Thus, the heat in the first semiconductor chip may be effectively transferred to the interposer chip through the thermal dissipation line.

Abstract: A method of manufacturing a semiconductor package includes preparing a parent substrate including package board parts laterally spaced apart from each other, mounting a first chip including a through-via electrode on each of the package board parts, forming a first mold layer on the parent substrate having the first chips, planarizing the first mold layer to expose back sides of the first chips, etching the exposed back sides of the first chips to expose back sides of the through-via electrodes, forming a passivation layer on the planarized first mold layer, the etched back sides of the first chips, and the back sides of the through-via electrodes, and selectively removing the passivation layer to expose the back sides of the through-via electrodes.

Abstract: Disclosed herein are a printed circuit board and a method for manufacturing the same. The printed circuit board includes: a core reinforcement having stiffness; insulating layers formed on both surfaces of the core reinforcement; a through hole formed by penetrating through the insulating layer and the core reinforcement; and a circuit layer formed on the insulating layer and a plating layer formed in the through hole for implementing inter-layer connection of the circuit layers.

Abstract: A multi-chip package may include a package substrate, an interposer chip, a first semiconductor chip, a thermal dissipation structure and a second semiconductor chip. The interposer chip may be mounted on the package substrate. The first semiconductor chip may be mounted on the interposer chip. The first semiconductor chip may have a size smaller than that of the interposer chip. The thermal dissipation structure may be arranged on the interposer chip to surround the first semiconductor chip. The thermal dissipation structure may transfer heat in the first semiconductor chip to the interposer chip. The second semiconductor chip may be mounted on the first semiconductor chip. Thus, the heat in the first semiconductor chip may be effectively transferred to the interposer chip through the thermal dissipation line.

Abstract: Disclosed are methods of treating a device-substrate, and support-substrates used therein. The methods may include providing the device-substrate having an integrated circuit, bonding a first top surface of the device-substrate to a support-substrate, and polishing a first bottom surface of the device-substrate. The support-substrates include a second top surface, a second bottom surface opposite to the second top surface, and a sidewall connecting the second top and bottom surfaces. Additionally, the support-substrates further include a grooved portion spaced apart from the sidewall and blocking a crack in the support-substrates occurring from the sidewall.

Abstract: A stack of semiconductor chips, a semiconductor device, and a method of manufacturing are disclosed. The stack of semiconductor chips may comprise a first chip of the stack, a second chip of the stack over the first chip, conductive bumps, a homogeneous integral underfill material, and a molding material. The conductive bumps may extend between an upper surface of the first chip and a lower surface of the second chip. The homogeneous integral underfill material may be interposed between the first chip and the second chip, encapsulate the conductive bumps, and extend along sidewalls of the second chip. The homogeneous integral underfill material may have an upper surface extending in a direction parallel to an upper surface of the second chip and located adjacent the upper surface of the second chip.

Abstract: A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.

Abstract: In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern.

Abstract: Provided is a semiconductor device. The semiconductor device may include a substrate and a stacked insulation layer on a sidewall of an opening which penetrates the substrate. The stacked insulation layer can include at least one first insulation layer and at least one second insulation layer whose dielectric constant is different than that of the first insulation layer. One insulation layer may be a polymer and one insulation layer may be a silicon based insulation layer. The insulation layers may be uniform in thickness or may vary as a distance from the substrate changes.