Abstract: A pixel including a light emitting element, a first transistor connected between a first node and the light emitting element to control current flowing from a first power supply to a second power supply, a second transistor connected between a data line and the first transistor to be turned on by an ith first scan signal, a third transistor including a P-type TFT connected between the first transistor and the first node to be turned on by the ith first scan signal and, a fourth transistor including an N-type TFT connected between the first node and an initialization power supply line to be turned on by an i?1th scan signal, and a first connection line connected between the third and fourth transistors to electrically connect semiconductor patterns thereof, in which the first connection line is disposed on the third and fourth transistors and contacts the semiconductor patterns thereof.

Abstract: A transistor substrate may include a base substrate, and a switching transistor and a driving transistor provided on the base substrate. The driving transistor includes: an active pattern provided on the base substrate and including a source region, a drain region spaced apart from the source region, and a channel region provided between the source region and the drain region; a gate electrode at least partially overlapping the active pattern; a gate insulating film provided between the active pattern and the gate electrode; a source electrode insulated from the gate electrode and connected to the source region; a drain electrode insulated from the gate electrode and connected to the drain region; and at least one dummy hole adjacent to the channel region.

Abstract: A display apparatus includes a base substrate, an active pattern on the base substrate including a source region, a drain region, and a channel region that is doped between the source region and the drain region, the channel region including polycrystalline silicon, and a gate electrode overlapping the channel region of the active pattern. The channel region may include a lower portion, an upper portion, and an intermediate portion between the upper portion and the lower portion, and a dopant density of the lower portion may be 80% or more of a dopant density of the upper portion.

Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

Abstract: The invention is directed to a non-naturally occurring microbial organism comprising a first attenuation of a succinyl-CoA synthetase or transferase and at least a second attenuation of a succinyl-CoA converting enzyme or a gene encoding a succinate producing enzyme within a multi-step pathway having a net conversion of succinyl-CoA to succinate.

Abstract: A pixel including a light emitting element, a first transistor connected between a first node and the light emitting element to control current flowing from a first power supply to a second power supply, a second transistor connected between a data line and the first transistor to be turned on by an ith first scan signal, a third transistor including a P-type TFT connected between the first transistor and the first node to be turned on by the ith first scan signal and, a fourth transistor including an N-type TFT connected between the first node and an initialization power supply line to be turned on by an i?1th scan signal, and a first connection line connected between the third and fourth transistors to electrically connect semiconductor patterns thereof, in which the first connection line is disposed on the third and fourth transistors and contacts the semiconductor patterns thereof.

Abstract: A scan driver includes stage circuits, each including: a first circuit including a control terminal (CT) connected to a first node (N1), and connecting/disconnecting a previous scan line of a previous stage circuit to a second node (N2) based on a control signal (CS); a second circuit including a CT connected to a clock signal line, and connecting one of a first power voltage line (FPVL) and a second power voltage line (SPVL) to the N1 based on a CS; a third circuit including a CT connected to the N2, and connecting one of the N1 and the SPVL to a third node (N3) based on a CS; a fourth circuit including a CT connected to the N3, and connecting one of the FPVL and the SPVL to a current scan line based on a CS; and a first capacitor connecting the CT of the third circuit and the SPVL.

Abstract: A transistor substrate may include a base substrate, and a switching transistor and a driving transistor provided on the base substrate. The driving transistor includes: an active pattern provided on the base substrate and including a source region, a drain region spaced apart from the source region, and a channel region provided between the source region and the drain region; a gate electrode at least partially overlapping the active pattern; a gate insulating film provided between the active pattern and the gate electrode; a source electrode insulated from the gate electrode and connected to the source region; a drain electrode insulated from the gate electrode and connected to the drain region; and at least one dummy hole adjacent to the channel region.

Abstract: The present disclosure provides a V2X antenna and a V2X antenna system. The V2X (Vehicle-to-Everything) antenna system includes: a first antenna arranged in a front surface of an interior of a vehicle, wherein the first antenna is configured to communicate at least one of a V2X signal or an LTE (Long Term Evolution) signal; a second antenna arranged in a rear surface of a roof of the vehicle, wherein the second antenna is configured to communicate at least one of the V2X signal or the LTE signal; and a tuner module configured to perform diversity communication in response to at least one of the V2X signal or the LTE signal received from the first antenna and the second antenna.

Abstract: A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.

Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

Abstract: The present disclosure provides a V2X antenna and a V2X antenna system. The V2X (Vehicle-to-Everything) antenna system includes: a first antenna arranged in a front surface of an interior of a vehicle, wherein the first antenna is configured to communicate at least one of a V2X signal or an LTE (Long Term Evolution) signal; a second antenna arranged in a rear surface of a roof of the vehicle, wherein the second antenna is configured to communicate at least one of the V2X signal or the LTE signal; and a tuner module configured to perform diversity communication in response to at least one of the V2X signal or the LTE signal received from the first antenna and the second antenna.

Abstract: Disclosed herein is an antenna for WAVE communication, and more particularly, is an antenna for WAVE communication to which an electromagnetic bandgap is applied to a patch antenna. The antenna includes a dielectric substrate provided with conduction patterns formed on opposite surfaces thereof, first patches disposed on a first surface of the dielectric substrate at positions spaced apart from each other at regular intervals and conducted to each other, second patches disposed on a second surface of the dielectric substrate at positions spaced apart from each other at regular intervals and conducted to each other; a third patch provided in a bottom of the second surface of the dielectric substrate and conducted to the plurality of second patches, and a plurality of electromagnetic bandgap structures positioned on the first surface of the dielectric substrate and conducted to the second patches or the third patch by a through hole.

Abstract: Disclosed herein is a tire sensor which includes a printed circuit board including an antenna matching circuit unit for matching a frequency corresponding to an antenna frequency, and a detection unit for detecting tire information, an antenna coupled to one side of the printed circuit board so as to transmit or receive the information detected by the detection unit to or from the outside, a battery coupled to the other side of the printed circuit board so as to supply electric power to the printed circuit board, and a sensor cover configured to accommodate the printed circuit board, the antenna, and the battery therein, one surface of the sensor cover being fixedly bonded into a tire.

Abstract: Disclosed herein is an antenna for WAVE communication, and more particularly, is an antenna for WAVE communication to which an electromagnetic bandgap is applied to a patch antenna. The antenna includes a dielectric substrate provided with conduction patterns formed on opposite surfaces thereof, first patches disposed on a first surface of the dielectric substrate at positions spaced apart from each other at regular intervals and conducted to each other, second patches disposed on a second surface of the dielectric substrate at positions spaced apart from each other at regular intervals and conducted to each other; a third patch provided in a bottom of the second surface of the dielectric substrate and conducted to the plurality of second patches, and a plurality of electromagnetic bandgap structures positioned on the first surface of the dielectric substrate and conducted to the second patches or the third patch by a through hole.

Abstract: A display device including: a substrate configured to include a first region and a second region formed at an outer periphery of the first region; an emission layer disposed on the first region and the second region of the substrate; a polarizer disposed on the emission layer; a touch panel disposed on the polarizer; a window disposed on the touch panel; and a light blocking layer covering side surfaces of the polarizer and the touch panel and a top surface of the emission layer disposed on the second region of the substrate. The polarizer and the touch panel cover the first region of the substrate and expose the second region of the substrate.

Abstract: Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

Abstract: Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.