Abstract: Disclosed herein is a tire sensor which includes a printed circuit board including an antenna matching circuit unit for matching a frequency corresponding to an antenna frequency, and a detection unit for detecting tire information, an antenna coupled to one side of the printed circuit board so as to transmit or receive the information detected by the detection unit to or from the outside, a battery coupled to the other side of the printed circuit board so as to supply electric power to the printed circuit board, and a sensor cover configured to accommodate the printed circuit board, the antenna, and the battery therein, one surface of the sensor cover being fixedly bonded into a tire.

Abstract: Disclosed herein is an antenna for WAVE communication, and more particularly, is an antenna for WAVE communication to which an electromagnetic bandgap is applied to a patch antenna. The antenna includes a dielectric substrate provided with conduction patterns formed on opposite surfaces thereof, first patches disposed on a first surface of the dielectric substrate at positions spaced apart from each other at regular intervals and conducted to each other, second patches disposed on a second surface of the dielectric substrate at positions spaced apart from each other at regular intervals and conducted to each other; a third patch provided in a bottom of the second surface of the dielectric substrate and conducted to the plurality of second patches, and a plurality of electromagnetic bandgap structures positioned on the first surface of the dielectric substrate and conducted to the second patches or the third patch by a through hole.

Abstract: A display device including: a substrate configured to include a first region and a second region formed at an outer periphery of the first region; an emission layer disposed on the first region and the second region of the substrate; a polarizer disposed on the emission layer; a touch panel disposed on the polarizer; a window disposed on the touch panel; and a light blocking layer covering side surfaces of the polarizer and the touch panel and a top surface of the emission layer disposed on the second region of the substrate. The polarizer and the touch panel cover the first region of the substrate and expose the second region of the substrate.

Abstract: Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

Abstract: Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Abstract: The invention is directed to a non-naturally occurring microbial organism comprising a first attenuation of a succinyl-CoA synthetase or transferase and at least a second attenuation of a succinyl-CoA converting enzyme or a gene encoding a succinate producing enzyme within a multi-step pathway having a net conversion of succinyl-CoA to succinate.

Abstract: A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Abstract: A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.

Abstract: A display device including: a substrate configured to include a first region and a second region formed at an outer periphery of the first region; an emission layer disposed on the first region and the second region of the substrate; a polarizer disposed on the emission layer; a touch panel disposed on the polarizer; a window disposed on the touch panel; and a light blocking layer covering side surfaces of the polarizer and the touch panel and a top surface of the emission layer disposed on the second region of the substrate. The polarizer and the touch panel cover the first region of the substrate and expose the second region of the substrate.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.

Abstract: A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.