Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.

Abstract: The cell barrier for a rechargeable battery module of the present invention includes a metal body and an insulating layer disposed on the surface of the metal body. The cell barrier is interposed between unit cells to electrically insulate between the unit cells. The insulating layer is selected from the group consisting of a resin layer, an inorganic oxide layer, an anodized layer, and a composite layer thereof. The cell barrier also has channels to provide for additional cooling by a heat transfer medium. A single unit cell can also be used with a cell barrier disposed along the unit cell for insulation and cooling.

Abstract: A battery module, including at least one unit battery having an electrode group and a battery casing, and at least one partitioning wall coupled to the at least one unit battery, wherein the at least one partitioning wall has a smaller size as compared to the at least one unit battery. The battery module may further include a plurality of alternating unit batteries and partitioning walls having at least one fixing member coupled to each unit battery.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.

Abstract: A battery module to accurately position a barrier between unit batteries and improve constructability of a battery module, including at least two unit batteries, and at least one barrier interposed between the unit batteries. The barrier includes a pair of panels facing each other and having protrusions on a surface of each panel that faces the other panel, at least one jointing hole formed in each panel, and a locking pin inserted into the jointing hole to combine the pair of panels with each other.

Abstract: A semiconductor device such as a flash memory device having a self-aligned floating gate and a method of fabricating the same is provided. An embodiment of the device includes an isolation layer defining a fin body is formed in a semiconductor substrate. The fin body has a portion protruding above the isolation layer. A sacrificial pattern is formed on the isolation layer. The sacrificial pattern has an opening self-aligned with the protruding portion of the fin body. The protruding fin body is exposed in the opening. An insulated floating gate pattern is formed to fill the opening. The sacrificial pattern is then removed. An inter-gate dielectric layer covering the floating gate pattern is formed. A control gate conductive layer is formed over the inter-gate dielectric layer.

Abstract: A battery module is provided. The battery module includes a battery body having a plurality of unit cells arranged in series and having a respective barrier disposed between adjacent unit cells. End plates are disposed on opposite outermost sides of the battery body. A fixing unit fixes together the end plates and the battery body by enclosing an outer circumference of an assembly of the end plates and the battery body.

Abstract: Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

Abstract: A battery module, including a plurality of unit cells and a cell barrier interposed between the unit cells, is provided. The cell barrier includes a body member and a fixing part disposed on the edge of the body member and connected to an adjacent cell barrier while housing a unit cell.

Abstract: A battery module including a plurality of unit batteries, a pair of end plates located at outermost sides of the plurality of unit batteries and connecting rods disposed at first and second edges of at least one of the end plates, the first and second edges being opposite edges, wherein the connecting rods fix the pair of end plates to the plurality of unit batteries, and the connecting rods are spaced apart at different intervals along the first and second edges of the at least one end plate.

Abstract: A battery module includes one or more cell assemblies with a plurality of unit cells, and a housing for mounting the cell assemblies therein and circulating a temperature control cooling medium through the cell assemblies. The cell assemblies are arranged in the longitudinal direction of the housing. A guidance unit is installed in a cooling medium passage formed in the longitudinal direction of the housing, and proceeds along the passage to guide cooling medium flow along the passage toward the cell assemblies.

Abstract: A battery module includes unit cells and a housing for accommodating the unit cells therein, the housing having paths for circulating a cooling medium. The housing includes: a unit cell receptor for receiving the unit cells, the unit cell receptor having an inner space with an inner spatial section area perpendicular to a longitudinal direction of the housing; and a cooling medium circulator having an inner space for circulating a cooling medium, the inner space being in communication with the inner space of the unit cell receptor and having an inner spatial section area perpendicular to the longitudinal direction of the housing. The inner spatial section area of the unit cell receptor is larger than the inner spatial section area of the circulator.

Abstract: A battery module including unit cells and a cell barrier interposed between the unit cells is disclosed. The cell barrier includes a plate and protrusions formed on one or both sides of the plate. The cell barrier supports the unit cells and provides coolant passages through which a coolant can flow and contact the unit cells.

Abstract: A battery module includes a plurality of unit batteries each having an electrode terminal and a connecting member for interconnecting the electrode terminals of the unit batteries. The connecting member includes a pair of coupling devices elastically coupled to the electrode terminal. The coupling devices are connected to each other by an electric cable.

Abstract: A battery module includes an aggregate cell including a plurality of unit cells, a pair of end plates arranged respectively at first and second sides of the aggregate cell, and a restraint rod fastened with the end plates and fixing the end plates to the aggregate cell, the restraint rod including a rod part, and a head part mounted on a first end of the rod part, the head part being moveable relative to the rod part.

Abstract: The present invention provides a battery module including a plurality of a unit cell having a terminal and a connection member, whose both ends are respectively fastened to the terminals of at least a pair of adjacent unit cells and has a joint in the middle. The connection member is improved to easily correspond to distance discrepancies between unit cells having a terminal, as both ends of the two rods can swing centering the joint.

Abstract: A battery module includes a battery assembly having a plurality of unit batteries. A housing receives the battery assembly and has an coolant flow passage formed around the battery assembly. A divider is installed in the coolant flow passage to divide the coolant flow passage into a plurality of sub-coolant flow passages.

Abstract: A battery module including a plurality of unit batteries arranged in series, an end plate located at each end of the plurality of unit batteries, a plurality of connecting members connected to each end plate to fix the end plates to the unit batteries, and at least one reinforcing member on each end plate, the reinforcing member serving to enhance the resistance to bending of each end plate.

Abstract: The present invention relates to a battery module including an aggregation comprising unit cells and a housing for housing the aggregation and circulating a coolant therein. The housing includes an inlet part disposed on an upper side of the aggregation, through which the coolant can flow into and along the housing in a length direction, and an outlet part connected to the inlet part, through which the coolant can be released out of the housing after cooling the unit cells while passing the aggregation.

Abstract: In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a semiconductor substrate, doped with impurities of a first conductivity type, which has one or more fins defined by at least two separate trenches formed in the substrate, the fins extending along the substrate in a first direction; pairs of gate electrodes formed as spacers at sidewalls of the fins, wherein the gate electrodes are insulated from the semiconductor substrate including the fins and extend parallel to the fins; storage nodes between the gate electrodes and the fins, and insulated from the gate electrodes and the semiconductor substrate; source regions and drain regions, which are doped with impurities of a second conductivity type, and are separately formed at least at surface portions of the fins and extend across the first direction of the fins; and channel regions corresponding to the respective gate