Abstract: An optical sensor including a pixel matrix and an opaque layer is provided. The pixel matrix includes a plurality of unblocked pixels, a first pixel and a second pixel, which is arranged at a side of the first pixel in a row direction of the pixel matrix. The opaque layer covers upon a first region, which is a part of the first pixel, and upon a second region, which is a part of the second pixel, but does not cover upon the unblocked pixels, wherein the first region and the second region are symmetrically arranged in the row direction, and uncovered regions of the first pixel and the second pixel are arranged to be larger at a pixel edge than at a pixel center in a column direction of the pixel matrix.

Abstract: In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.

Abstract: A method for registering a two-dimensional image data set with a three-dimensional image data set of a body of interest is discloses herein. The method includes the following steps: defining a first vector of a registered virtual camera in a coordinate system of the three-dimensional image data et; obtaining a first transformed vector of an unregistered virtual camera in the coordinate system of the three-dimensional image data set by transforming the first vector of the registered virtual camera through at least one transforming matrix; defining a focal point of the unregistered virtual camera at a reference point of the two-dimensional image data set in the coordinate system of the three-dimensional image data set; and repositioning the unregistered virtual camera according to the first transformed vector and the focal point of the unregistered virtual camera.

Abstract: An electronic package module and a method for fabrication of the same are provided. The method includes providing an electronic component assembly and a circuit substrate. The electronic component assembly includes two electronic components and a conductive structure. The electronic components are connected to each other through a conductive adhesive material, while the electronic components are connected to the conductive structure through another conductive adhesive material. A soldering material is formed on the circuit substrate, and the electronic component assembly is disposed on the soldering material. The melting points of the conductive adhesive materials are higher than the melting point of the soldering material. As a result, the conductive adhesive materials are prevented from failure during the soldering process, and thus the process yield is improved.

Abstract: Various solutions for reporting aggregated bandwidth capability with respect to an apparatus in mobile communications are described. The apparatus may transmit a plurality of capability signaling of aggregated bandwidth in band combination level to a network node. Each of capability signaling of aggregated bandwidth may indicate a maximum aggregated bandwidth across component carriers. The apparatus may transmit a feature set per component-carrier, which includes channel bandwidths, to the network node for determining a channel bandwidth configuration set according to the plurality of capability signaling of aggregated bandwidth and the feature set per component-carrier. The apparatus may communicate with the network node based on the channel bandwidth configuration set.

Abstract: Chalcogenide waveguides with high width-to-height aspect ratios and a smooth exposed surfaces can serve as mid-infrared evanescent-absorption-based sensors for detecting and identifying volatile organic compounds and/or determining their concentration, optionally in real-time. The waveguide sensors may be manufactured using a modified sputtering process in which the sputtering target and waveguide substrate are titled and/or laterally offset relative to each other and the substrate is continuously rotated.

Abstract: The object of the present disclosure is to provide a method for treating diabetes by using an Antrodia camphorata compound, wherein the Antrodia camphorata compound is shown in the following formula 1: or the pharmacologically acceptable salts of the formula 1.

Abstract: In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.

Abstract: Chalcogenide waveguides with high width-to-height aspect ratios and a smooth exposed surfaces can serve as mid-infrared evanescent-absorption-based sensors for detecting and identifying volatile organic compounds and/or determining their concentration, optionally in real-time. The waveguide sensors may be manufactured using a modified sputtering process in which the sputtering target and waveguide substrate are titled and/or laterally offset relative to each other and the substrate is continuously rotated.

Abstract: A photonic biosensor including a biological probe disposed on a mid-infrared-transparent waveguide can be used to detect biological analytes in biological samples, using specific binding of the analyte to the probe in conjunction with absorption spectroscopy. In various embodiments, the biosensor is used for molecular diagnostics, e.g., to detect oligonucleotides or proteins associated with a coronavirus.

Abstract: A method for manufacturing a memory device includes forming a dielectric layer over a wafer, wherein the wafer has a device region and a peripheral region adjacent to the device region. A bottom via opening is formed in the dielectric layer and over the device region of the wafer and a trench is formed in the dielectric layer and over the peripheral region of the wafer. A bottom electrode via is formed in the bottom via opening. A bottom electrode layer is conformally formed over the bottom electrode via and lining a sidewall and a bottom of the trench. A memory layer and a top electrode are formed over the bottom electrode layer.

Abstract: A device includes a semiconductor substrate, and a plurality of semiconductor fins parallel to each other, wherein the plurality of semiconductor fins is a portion of the semiconductor substrate. A Shallow Trench Isolation (STI) region is on a side of the plurality of semiconductor fins. The STI region has a top surface and a non-flat bottom surface, wherein the plurality of semiconductor fins is over the top surface of the STI region.

Abstract: A method for manufacturing a memory device includes forming a dielectric layer over a wafer, wherein the wafer has a device region and a peripheral region adjacent to the device region. A bottom via opening is formed in the dielectric layer and over the device region of the wafer and a trench is formed in the dielectric layer and over the peripheral region of the wafer. A bottom electrode via is formed in the bottom via opening. A bottom electrode layer is conformally formed over the bottom electrode via and lining a sidewall and a bottom of the trench. A memory layer and a top electrode are formed over the bottom electrode layer.

Abstract: A method for registering a two-dimensional image data set with a three-dimensional image data set of a body of interest is discloses herein. The method includes the following steps: adjusting a first virtual camera according to a distance parameter calculated corresponding to the two-dimensional image data set and the body of interest; rotating the first virtual camera according to an angle difference between a first vector and a second vector; and rotating the first virtual camera according to an angle which is corresponding to a maximum similarity value of a plurality of similarity values calculated in accordance with reconstructed images of the three-dimensional image data set which includes one generated by the first virtual camera and the others generated by other virtual cameras with different angles or different pixels from the one generated by the first virtual camera and the two-dimensional image data set.

Abstract: Examples pertaining to cell discontinuous transmission (DTX) and user equipment (UE) discontinuous reception (DRX) are described. A UE receives a configuration of a cell DTX from a network node with a cell DTX functionality. The configuration carries information regarding at least one of a periodicity, a start slot or a start offset and an on duration. Then, the UE skips a monitoring activity during one or more non-active periods of the cell DTX of the network node.

Abstract: A method includes forming a patterned etching mask, which includes a plurality of strips, and etching a semiconductor substrate underlying the patterned etching mask to form a first plurality of semiconductor fins and a second plurality of semiconductor fins. The patterned etching mask is used as an etching mask in the etching. The method further includes etching the second plurality of semiconductor fins without etching the first plurality of semiconductor fins. An isolation region is then formed, and the first plurality of semiconductor fins has top portions protruding higher than a top surface of the isolation region.

Abstract: In a method of forming a pattern, a first pattern is formed over an underlying layer, the first pattern including main patterns and a lateral protrusion having a thickness of less than 25% of a thickness of the main patterns, a hard mask layer is formed over the first pattern, a planarization operation is performed to expose the first pattern without exposing the lateral protrusion, a hard mask pattern is formed by removing the first pattern while the lateral protrusion being covered by the hard mask layer, and the underlying layer is patterned using the hard mask pattern as an etching mask.

Abstract: An optical sensor including a pixel matrix and an opaque layer is provided. The pixel matrix includes a plurality of unblocked pixels, a first pixel and a second pixel, which is arranged at a side of the first pixel in a row direction of the pixel matrix. The opaque layer covers upon a first region, which is a part of the first pixel, and upon a second region, which is a part of the second pixel, but does not cover upon the unblocked pixels, wherein the first region and the second region are symmetrically arranged in the row direction, and uncovered regions of the first pixel and the second pixel are arranged to be larger at a pixel edge than at a pixel center in a column direction of the pixel matrix.

Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.

Abstract: A method of manufacturing a semiconductor device includes forming an underlying structure in a first area and a second area over a substrate. A first layer is formed over the underlying structure. The first layer is removed from the second area while protecting the first layer in the first area. A second layer is formed over the first area and the second area, wherein the second layer has a smaller light transparency than the first layer. The second layer is removed from the first area, and first resist pattern is formed over the first layer in the first area and a second resist pattern over the second layer in the second area.