Abstract: Chalcogenide waveguides with high width-to-height aspect ratios and a smooth exposed surfaces can serve as mid-infrared evanescent-absorption-based sensors for detecting and identifying volatile organic compounds and/or determining their concentration, optionally in real-time. The waveguide sensors may be manufactured using a modified sputtering process in which the sputtering target and waveguide substrate are titled and/or laterally offset relative to each other and the substrate is continuously rotated.

Abstract: In pattern formation method, a photomask is loaded into a lithography apparatus, an exposure light is applied to a photo resist layer formed over a substrate through or via the photomask, and the photo resist layer is developed. The photomask includes a plurality of octagonal shape patterns periodically arranged in a first direction and a second direction crossing the first direction. A width Lx of horizontal sides extending in the first direction of each of the plurality octagonal shape patterns is different from a width Ly of vertical sides extending in the second direction of each of the plurality octagonal shape patterns.

Abstract: A surgical navigation method includes obtaining a three-dimensional image; selecting a viewing angle direction; generating one or more two-dimensional images arranged along the viewing angle direction from the three-dimensional image; superimposing the one or more two-dimensional images along the viewing angle direction to form a two-dimensional superimposed image; and guiding a movement of a virtual surgical instrument into the two-dimensional superimposed image.

Abstract: In a method of patterning an integrated circuit, test layer thickness variation data is received when a test layer with a known thickness disposed over a test substrate undergoes tilted angle plasma etching. Overlay offset data per substrate locations caused by the tilted angle plasma etching is determined. The overlay offset data is determined based on the received thickness variation data. The overlay offset data is associated with an overlay between first circuit patterns of a first layer on the semiconductor substrate and corresponding second circuit patterns of a second layer disposed over the first layer on the substrate. A location of the substrate is adjusted based on the overlay offset data during a lithography operation to pattern a resist layer over the second layer. The second layer is patterned based on the projected layout patterns of the reticle and using the tilted angle plasma etching.

Abstract: A method for manufacturing a memory device includes forming a dielectric layer over a wafer, wherein the wafer has a device region and a peripheral region adjacent to the device region. A bottom via opening is formed in the dielectric layer and over the device region of the wafer and a trench is fanned in the dielectric layer and over the peripheral region of the wafer. A bottom electrode via is formed in the bottom via opening. A bottom electrode layer is conformally formed over the bottom electrode via and lining a sidewall and a bottom of the trench. A memory layer and a top electrode are formed over the bottom electrode layer.

Abstract: A method of manufacturing a semiconductor device includes forming an underlying structure in a first area and a second area over a substrate. A first layer is formed over the underlying structure. The first layer is removed from the second area while protecting the first layer in the first area. A second layer is formed over the first area and the second area, wherein the second layer has a smaller light transparency than the first layer. The second layer is removed from the first area, and first resist pattern is formed over the first layer in the first area and a second resist pattern over the second layer in the second area.

Abstract: A surgical navigation method includes selecting one or more two-dimensional images from a three-dimensional image. The method further includes adjusting a portion of the two-dimensional images along a viewing direction. The method also includes superimposing the portion of the two-dimensional images along the viewing direction to form a two-dimensional superimposed image. The method further incudes guiding movement of a virtual surgical instrument into the two-dimensional superimposed image.

Abstract: Chalcogenide waveguides with high width-to-height aspect ratios and a smooth exposed surfaces can serve as mid-infrared evanescent-absorption-based sensors for detecting and identifying volatile organic compounds and/or determining their concentration, optionally in real-time. The waveguide sensors may be manufactured using a modified sputtering process in which the sputtering target and waveguide substrate are titled and/or laterally offset relative to each other and the substrate is continuously rotated.

Abstract: A power converter with a negative current detection mechanism is provided. A negative current detecting circuit includes a first operational amplifier, a first transistor and a second transistor. A non-inverting input terminal of the first operational amplifier is connected to a second terminal of a sense resistor. An inverting input terminal of the first operational amplifier is connected to a first terminal of a first capacitor. Control terminals of the first and second transistors are connected to an output terminal of the first operational amplifier. A first terminal of the first transistor is connected to the second terminal of the sense resistor. A second terminal of the first transistor is grounded. A first terminal of the second transistor is connected to the inverting input terminal of the first operational amplifier and the first terminal of the first transistor. A second terminal of the second transistor is grounded.

Abstract: In one example, an apparatus includes an extreme ultraviolet illumination source and an illuminator. The extreme ultraviolet illumination source is arranged to generate a beam of extreme ultraviolet illumination to pattern a resist layer on a substrate. The illuminator is arranged to direct the beam of extreme ultraviolet illumination onto a surface of a photomask. In one example, the illuminator includes a field facet mirror and a pupil facet mirror. The field facet mirror includes a first plurality of facets arranged to split the beam of extreme ultraviolet illumination into a plurality of light channels. The pupil facet mirror includes a second plurality of facets arranged to direct the plurality of light channels onto the surface of the photomask. The distribution of the second plurality of facets is denser at a periphery of the pupil facet mirror than at a center of the pupil facet mirror.

Abstract: A power converter with a negative current detection mechanism is provided. A negative current detecting circuit includes a first operational amplifier, a first transistor and a second transistor. A non-inverting input terminal of the first operational amplifier is connected to a second terminal of a sense resistor. An inverting input terminal of the first operational amplifier is connected to a first terminal of a first capacitor. Control terminals of the first and second transistors are connected to an output terminal of the first operational amplifier. A first terminal of the first transistor is connected to the second terminal of the sense resistor. A second terminal of the first transistor is grounded. A first terminal of the second transistor is connected to the inverting input terminal of the first operational amplifier and the first terminal of the first transistor. A second terminal of the second transistor is grounded.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO2), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).

Abstract: A method for evaluation of thin film non-uniform stress using high order wafer warpage, the steps including measuring a net wafer warpage across a wafer area due to thin film deposition, fitting a two dimensional low-order polynomial to the wafer warpage measurements and subtracting the low-order polynomial from the net wafer warpage across the wafer area.

Abstract: An optical module including a light source and an optical sensor is provided. The optical sensor includes a pixel matrix and an opaque layer. The pixel matrix includes a plurality of unblocked pixels, a plurality of first pixels and a plurality of second pixels. The opaque layer covers upon a first region, which is a part of each first pixel, and upon a second region, which is a part of each second pixel, but does not cover upon the unblocked pixels, wherein the first region and the second region are symmetrically arranged in a first direction, and uncovered regions of the first pixels and the second pixels are arranged to be larger at a pixel edge than at a pixel center.

Abstract: A patterning process is performed on a semiconductor wafer coated with a bottom layer, a middle layer and a photoresist layer having a starting thickness. The patterning process includes: performing an exposure step including exposing the semiconductor wafer using a mask that includes a feature which produces an intermediate light exposure in a target area followed by processing that creates openings in the photoresist layer in accordance with the mask and thins the photoresist in the target area due to the intermediate light exposure in the target area leaving thinned photoresist in the target area; performing middle layer etching to form openings in the middle layer aligned with the openings in the photoresist layer, wherein the middle layer etching does not remove the middle layer in the target area due to protection provided by the thinned photoresist; and performing trim etching to trim the middle layer in the target area.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO2), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).

Abstract: A current sensing circuit includes a sensing resistor, a current monitor, a variable resistor, and a processor. The sensing resistor is disposed on a to-be-sensed circuit and coupled between first and second first voltage terminals of the to-be-sensed circuit. The current monitor includes first and second terminals. A first winding is coupled between the first terminal and the first voltage terminal, and a second winding is coupled between the second terminal and the second voltage terminal. The variable resistor is connected in series with the first winding between the first voltage terminal and the first terminal. The current monitor obtains a sensed current according to a first voltage on the first terminal, a second voltage on the second terminal, and an impedance of the sensing resistor and generates a sensing signal. The processor determines whether to adjust an impedance of the variable resistor according to the sensing signal.

Abstract: A current sensing circuit includes a sensing resistor, a current monitor, a variable resistor, and a processor. The sensing resistor is disposed on a to-be-sensed circuit and coupled between first and second first voltage terminals of the to-be-sensed circuit. The current monitor includes first and second terminals. A first winding is coupled between the first terminal and the first voltage terminal, and a second winding is coupled between the second terminal and the second voltage terminal. The variable resistor is connected in series with the first winding between the first voltage terminal and the first terminal. The current monitor obtains a sensed current according to a first voltage on the first terminal, a second voltage on the second terminal, and an impedance of the sensing resistor and generates a sensing signal. The processor determines whether to adjust an impedance of the variable resistor according to the sensing signal.

Abstract: In a method of forming a pattern, a first pattern is formed over an underlying layer, the first pattern including main patterns and a lateral protrusion having a thickness of less than 25% of a thickness of the main patterns, a hard mask layer is formed over the first pattern, a planarization operation is performed to expose the first pattern without exposing the lateral protrusion, a hard mask pattern is formed by removing the first pattern while the lateral protrusion being covered by the hard mask layer, and the underlying layer is patterned using the hard mask pattern as an etching mask.

Abstract: An image sensor including a pixel matrix and an opaque layer is provided. The pixel matrix includes a plurality of unblocked pixels, a plurality of first pixels and a plurality of second pixels. The opaque layer covers upon a first region, which is a part of each first pixel, and upon a second region, which is a part of each second pixel, but does not cover upon the unblocked pixels, wherein the first region and the second region are symmetrically arranged in a first direction, and uncovered regions of the first pixels and the second pixels are arranged to be larger at a pixel edge than at a pixel center.